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MM3Z12VT1G

Onsemi

MM3Z12VT1G by Onsemi

MM3Z12VT1G by Onsemi is a Zener diode with 12V nominal reference voltage, 5 mA test current, and 8V reverse test voltage. It is ideal for applications requiring precise voltage regulation in small outline packages. With a max power dissipation of 0.3W and operating temperature range from -65 to 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

48

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 10 parts In-Stock

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$0.108

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$0.103

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$0.103

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$0.108

$0.103

$0.103

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Arrow

USA . 5,440 parts In-Stock

1+ parts

$0.147

100+ parts

$0.060

1k+ parts

$0.037

10k+ parts

$0.015

5,440

$0.147

$0.060

$0.037

$0.015

EBV Elektronik

Germany . 660,000 parts In-Stock

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Rochester

USA . 141,000 parts In-Stock

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Verical

USA . 99,000 parts In-Stock

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Avnet

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Farnell

UK . 68,380 parts In-Stock

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Element14

Singapore . 68,380 parts In-Stock

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RS (Exports)

UK . 23,550 parts In-Stock

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Chip1Stop

Japan . 10,090 parts In-Stock

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Newark

USA . 6,000 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Maritex

Poland . 1,355 parts In-Stock

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$0.067

$0.036

$0.034

$0.030

TME

Poland . 3,362 parts In-Stock

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3,362

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Digiode

USA . 2,191 parts In-Stock

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Bristol Electronics

USA . 5,892 parts In-Stock

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NAC Semi

USA . 654,000 parts In-Stock

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Component Sense

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Electronic Treasures

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Holdelec - ElecDif-Pro

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LIBRA Elektronik GmbH

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Flex Direct, LLC

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Global Solutions Electronics Company

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A2Z Electronics, Inc.

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Ampacity Inc.

Singapore . 153,627 parts In-Stock

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Semicontronic

India . 138,918 parts In-Stock

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Corohmni

South Africa . 131 parts In-Stock

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Germany . 148,267 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

USA . 2,385 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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AZTECH Wire

Italy . 9,826 parts In-Stock

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Aztec Data Supply Inc.

USA . 6,055 parts In-Stock

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Corphita

USA . 1,884 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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Perfect Parts

USA . 1,551,794 parts In-Stock

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Eastek

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Canada . 60,000 parts In-Stock

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Brazil . 31,958 parts In-Stock

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Lucentia Tech

USA . 31,958 parts In-Stock

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Futuretech Components

Singapore . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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iodParts Technologies Inc.

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Israel . 5,434 parts In-Stock

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Overview

Discover the reliability and precision of the MM3Z12VT1G Zener Diode by Onsemi. Crafted with quality materials and cutting-edge technology, this product offers unparalleled performance and consistency in a variety of applications. Whether you're in need of voltage regulation or circuit protection, the MM3Z12VT1G delivers exceptional value and efficiency, making it the ideal choice for your electronic projects. Trust Onsemi for top-notch components that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the zener diode, ensuring a longer lifespan.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode can handle moderate current levels effectively.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current of 0.1 uA ensures minimal leakage and high efficiency of the zener diode.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this zener diode can withstand high temperatures without compromising performance.

Nominal Reference Voltage: 12 V

The nominal reference voltage of 12 V makes this zener diode suitable for applications requiring precise voltage regulation.

Technical Specifications

Zener Diodes MM3Z12VT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Knee Impedance:

80 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

8 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.39 %

Working Test Current:

5 mA

Trade Compliance

MM3Z12VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-568-3071, 5961015683071

NIIN

015683071

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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