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MM3Z4V7T1G

Onsemi

MM3Z4V7T1G by Onsemi

MM3Z4V7T1G by Onsemi is a Zener diode with a reverse test voltage of 2V and max forward voltage of 0.9V. It has a working test current of 5mA, making it suitable for voltage regulation applications in electronic circuits. With a small outline package style and dual terminal position, it offers precise voltage control with low dynamic impedance.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 98,134 parts In-Stock

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Mouser Electronics

USA . 40,539 parts In-Stock

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$0.026

Flip Electronics (Authorized)

USA . 167,260 parts In-Stock

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Farnell

UK . 107,285 parts In-Stock

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Element14

Singapore . 95,414 parts In-Stock

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DigiKey

USA . 92,776 parts In-Stock

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Arrow

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Rochester

USA . 42,000 parts In-Stock

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Canada . 39,000 parts In-Stock

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Chip1Stop

Japan . 9,996 parts In-Stock

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Verical

USA . 9,986 parts In-Stock

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Distrelec

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Digiode

USA . 1,194 parts In-Stock

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Nova Conductors

Japan . 28 parts In-Stock

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Maritex

Poland . 1,877 parts In-Stock

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TME

Poland . 15,084 parts In-Stock

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Ozdisan Elektronik

Türkiye . 6,000 parts In-Stock

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$57.130

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IBS Electronics

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NAC Semi

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Cyclops Electronics Ltd

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J2 Sourcing AB

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Sea View Technologies

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ComSIT Distribution GmbH

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Vyrian

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LIBRA Elektronik GmbH

Germany . 4,238 parts In-Stock

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Mil-Aero Solutions, Inc.

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Speed Components Ltd

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A2Z Electronics, Inc.

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Bristol Electronics

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Semi Source

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LWI Electronics Inc

India . 1,500 parts In-Stock

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Classic Components Corporation

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Prism Electronics

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Inventory MP

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Ampacity Inc.

Singapore . 120,707 parts In-Stock

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Semicontronic

India . 84,299 parts In-Stock

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Corohmni

South Africa . 272 parts In-Stock

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Corphita

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Component Stockers USA

USA . 204,638 parts In-Stock

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AZTECH Wire

Italy . 8,246 parts In-Stock

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Argo Parts USA

USA . 1,876 parts In-Stock

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Continental Prestige Electronics

USA . 43 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 316 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Perfect Parts

USA . 2,946,199 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 390,000 parts In-Stock

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RC Electronics

USA . 129,990 parts In-Stock

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Kepictronics

USA . 45,000 parts In-Stock

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Glotronic Ltd.

UK . 40,800 parts In-Stock

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Robosynatics

Brazil . 32,198 parts In-Stock

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Lucentia Tech

USA . 32,198 parts In-Stock

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Infinite Electronics LLP (Excess)

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Eastek

USA . 18,000 parts In-Stock

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Problanco Electronics

Mexico . 6,998 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,617 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,873 parts In-Stock

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TANS Electronics

Latvia . 5,413 parts In-Stock

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Kulean Microsystems

USA . 2,600 parts In-Stock

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FE SAS

France . 2,500 parts In-Stock

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Supply Digital

USA . 1,457 parts In-Stock

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SupplyDigital Components

Austria . 919 parts In-Stock

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Lixinc

USA . 567 parts In-Stock

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UHIMA Technologies

Türkiye . 106 parts In-Stock

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Overview

Experience superior performance and reliability with the MM3Z4V7T1G Zener Diode by Onsemi. Known for their exceptional quality and cutting-edge technology, Onsemi delivers top-notch components for a wide range of applications. Whether you're designing power supplies, voltage regulators, or signal conditioning circuits, this diode offers unmatched precision and efficiency. Trust in Onsemi's expertise and elevate your projects with the MM3Z4V7T1G Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 5 mA

The high working test current of 5 mA ensures reliable performance in various circuit applications.

Maximum Reverse Current: 3 uA

Low maximum reverse current of 3 uA indicates minimal leakage current, leading to efficient energy use.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this zener diode can withstand elevated temperatures without compromising functionality.

Diode Type: ZENER DIODE

Being a zener diode, it is specifically designed to maintain a constant voltage across its terminals, making it ideal for voltage regulation applications.

Technical Specifications

Zener Diodes MM3Z4V7T1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Knee Impedance:

800 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.7 V

Maximum Reverse Current:

3 uA

Reverse Test Voltage:

2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.38 %

Working Test Current:

5 mA

Trade Compliance

MM3Z4V7T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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