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1N4741A-T

Diodes Incorporated

1N4741A-T by Diodes Incorporated

1N4741A-T by Diodes Inc. is a Zener diode with 11V nominal voltage, 5% voltage tolerance, and 23mA test current. Ideal for voltage regulation in electronic circuits due to its unidirectional polarity and 1W power dissipation capability at temperatures ranging from -65°C to 175°C.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

1+ parts

$0.041

100+ parts

$0.039

1k+ parts

$0.039

10k+ parts

-

350

$0.041

$0.039

$0.039

-

DigiKey

USA . 225 parts In-Stock

1+ parts

$0.140

100+ parts

-

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225

$0.140

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-

Distributors (In-Stock)

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Digiode

USA . 554 parts In-Stock

1+ parts

$0.039

100+ parts

-

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554

$0.039

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Nova Conductors

Japan . 159 parts In-Stock

1+ parts

$0.140

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159

$0.140

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-

Chip Stock

USA . 42,000 parts In-Stock

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42,000

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VNN

France . 23,136 parts In-Stock

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23,136

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Bristol Electronics

USA . 10,000 parts In-Stock

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10,000

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MISTER SPROCKETS

USA . 2,500 parts In-Stock

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2,500

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Vyrian

USA . 2,495 parts In-Stock

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2,495

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Chris Electronics

USA . 2,190 parts In-Stock

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2,190

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,767 parts In-Stock

1+ parts

$0.024

100+ parts

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4,767

$0.024

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Semicontronic

India . 2,506 parts In-Stock

1+ parts

$0.024

100+ parts

$0.023

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$0.023

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-

2,506

$0.024

$0.023

$0.023

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Corphita

USA . 90 parts In-Stock

1+ parts

$0.037

100+ parts

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90

$0.037

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Argo Parts USA

USA . 7,077 parts In-Stock

1+ parts

$0.037

100+ parts

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1k+ parts

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10k+ parts

$0.036

7,077

$0.037

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-

$0.036

Continental Prestige Electronics

USA . 6,131 parts In-Stock

1+ parts

$0.037

100+ parts

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$0.036

6,131

$0.037

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-

$0.036

Corohmni

South Africa . 363 parts In-Stock

1+ parts

$0.040

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363

$0.040

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Component Stockers USA

USA . 5,741 parts In-Stock

1+ parts

$0.170

100+ parts

$0.060

1k+ parts

$0.040

10k+ parts

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5,741

$0.170

$0.060

$0.040

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Andel Nordic

Denmark . 4,953 parts In-Stock

1+ parts

$2.707

100+ parts

-

1k+ parts

$2.599

10k+ parts

$2.599

4,953

$2.707

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$2.599

$2.599

Perfect Parts

USA . 20,207 parts In-Stock

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20,207

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QUARKTWIN TECHNOLOGY LTD

USA . 15,267 parts In-Stock

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15,267

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Supply Digital

USA . 1,800 parts In-Stock

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1,800

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Netroflash

USA . 600 parts In-Stock

1+ parts

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100+ parts

$0.137

1k+ parts

$0.133

10k+ parts

$0.130

600

-

$0.137

$0.133

$0.130

Overview

Elevate your electronics with the 1N4741A-T Zener Diode by Diodes Incorporated. Known for their superior quality and reliability, Diodes Incorporated offers a comprehensive range of components for various applications. This Zener diode is designed to provide precise voltage regulation, making it ideal for circuit protection and voltage stabilization. Experience the value and benefits of this product as it ensures optimal performance and efficiency in your electronic projects. Choose Diodes Incorporated for trusted solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package provides a high level of durability and reliability, making this Zener diode suitable for various applications.

Working Test Current: 23 mA

The 23 mA working test current ensures stable and consistent performance of the Zener diode in different operating conditions.

Maximum Voltage Tolerance: 5 %

The tight maximum voltage tolerance of 5% ensures accurate voltage regulation and reliable operation of the circuit.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1 W, this Zener diode can handle higher power loads while maintaining efficiency.

Nominal Reference Voltage: 11 V

The nominal reference voltage of 11 V allows for precise voltage regulation, making this Zener diode ideal for voltage stabilization applications.

Technical Specifications

Zener Diodes 1N4741A-T attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

8 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

11 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN SILVER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

23 mA

Trade Compliance

1N4741A-T Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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