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2SC536NG-NPA-AT

Onsemi

2SC536NG-NPA-AT by Onsemi

2SC536NG-NPA-AT by Onsemi is a NPN BJT transistor with hFE of 280, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and max IC of 0.15A. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,689,582 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

1,689,582

-

$0.053

$0.044

$0.039

DigiKey

USA . 1,689,582 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.070

1,689,582

-

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$0.070

Verical

USA . 1,689,582 parts In-Stock

1+ parts

-

100+ parts

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$0.049

1,689,582

-

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-

$0.049

Distributors (In-Stock)

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Digiode

USA . 319 parts In-Stock

1+ parts

$0.041

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-

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319

$0.041

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Vyrian

USA . 834 parts In-Stock

1+ parts

$0.043

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834

$0.043

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Bristol Electronics

USA . 688,500 parts In-Stock

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688,500

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,689,242 parts In-Stock

1+ parts

$0.037

100+ parts

-

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1,689,242

$0.037

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Corphita

USA . 1,908 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,908

$0.039

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Corohmni

South Africa . 467 parts In-Stock

1+ parts

$0.042

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467

$0.042

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Native Components

USA . 54 parts In-Stock

1+ parts

$74.010

100+ parts

-

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10k+ parts

$71.050

54

$74.010

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$71.050

Northwest PG Solutions

USA . 1,776 parts In-Stock

1+ parts

$81.411

100+ parts

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1,776

$81.411

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Continental Prestige Electronics

USA . 1,689,582 parts In-Stock

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$0.039

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1,689,582

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$0.039

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Assy Fe

Spain . 10,500 parts In-Stock

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10,500

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SupplyDigital Components

Austria . 8,250 parts In-Stock

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Problanco Electronics

Mexico . 3,206 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,496 parts In-Stock

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Perfect Parts

USA . 1,571 parts In-Stock

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Kulean Microsystems

USA . 1,041 parts In-Stock

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1,041

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TANS Electronics

Latvia . 857 parts In-Stock

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857

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UHIMA Technologies

Türkiye . 342 parts In-Stock

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342

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Overview

Enhance your electronic projects with the reliable 2SC536NG-NPA-AT NPN transistor by Onsemi. Known for their top-notch quality and superior performance, Onsemi is a trusted manufacturer in the industry. This small signal BJT is perfect for amplifier applications, offering a minimum DC current gain of 280 and a maximum collector-emitter voltage of 50V. With a nominal transition frequency of 200 MHz, this transistor ensures optimal functionality and efficiency. Upgrade your designs with the 2SC536NG-NPA-AT and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides a durable and lightweight housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy integration into electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in audio and signal amplification circuits.

Package Shape: ROUND

The round package shape provides a compact design, allowing for easy installation and saving space on the circuit board.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easier soldering during assembly, ensuring reliable electrical connections.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and facilitates proper biasing and control of the transistor.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers mechanical stability and enhances thermal dissipation, improving overall performance and longevity.

Minimum DC Current Gain (hFE): 280

The high minimum DC current gain ensures consistent and reliable amplification of signals with minimal distortion.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle a wide range of voltage levels in various circuit applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency, making this transistor a reliable choice for electronic circuits.

Maximum Collector Current (IC): 0.15 A

The maximum collector current rating of 0.15A allows for handling of moderate power levels, suitable for small signal amplification requirements.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and ensures good solderability, ensuring long-term reliability in various operating conditions.

Terminal Position: BOTTOM

Having terminals positioned at the bottom makes it easier to mount and connect the transistor in various circuit configurations.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200MHz indicates the transistor's ability to amplify high-frequency signals with minimal distortion, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC536NG-NPA-AT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

280

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC536NG-NPA-AT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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