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2SA2043(TP-FA)

Onsemi

2SA2043(TP-FA) by Onsemi

The Onsemi 2SA2043(TP-FA) is a PNP transistor with a max power dissipation of 15W, hFE of 200, and IC of 10A. Ideal for applications requiring high current amplification in surface mount configurations at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,693 parts In-Stock

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Digiode

USA . 1,130 parts In-Stock

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1,130

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Native Components

USA . 951 parts In-Stock

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$0.039

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$0.037

951

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$0.037

SupplyDigital Components

Austria . 7,579 parts In-Stock

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Kulean Microsystems

USA . 7,550 parts In-Stock

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7,550

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TANS Electronics

Latvia . 2,354 parts In-Stock

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Corphita

USA . 1,246 parts In-Stock

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Problanco Electronics

Mexico . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 746 parts In-Stock

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Corohmni

South Africa . 459 parts In-Stock

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Northwest PG Solutions

USA . 346 parts In-Stock

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Overview

Upgrade your electronic designs with the 2SA2043(TP-FA) by Onsemi, a top-of-the-line PNP transistor that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a wide range of applications. With a maximum power dissipation of 15W and a maximum collector current of 10A, this transistor is designed to handle high-power tasks with ease. Experience superior quality and efficiency with the 2SA2043(TP-FA) - your go-to choice for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are suitable for applications requiring positive voltage control, making this product versatile for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this product into a variety of electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient installation on circuit boards, which is ideal for compact electronic devices.

Maximum Power Dissipation (Abs): 15 W

With a maximum power dissipation of 15 W, this product can handle higher power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures proper amplification of signals, making this transistor efficient for signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperature environments, increasing its durability and reliability.

Maximum Collector Current (IC): 10 A

The high maximum collector current of 10 A allows this transistor to handle larger electrical currents, enabling it to be used in power applications.

Technical Specifications

Other Function Transistors 2SA2043(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA2043(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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