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2SA2039TP-FA

Onsemi

2SA2039TP-FA by Onsemi

The Onsemi 2SA2039TP-FA is a PNP transistor with max power dissipation of 15W, min DC current gain of 200, and max collector current of 5A. Ideal for applications requiring high power handling in a compact form factor such as audio amplifiers and voltage regulators.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,084 parts In-Stock

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Vyrian

USA . 501 parts In-Stock

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501

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Kulean Microsystems

USA . 8,272 parts In-Stock

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Problanco Electronics

Mexico . 6,230 parts In-Stock

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SupplyDigital Components

Austria . 5,467 parts In-Stock

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TANS Electronics

Latvia . 2,734 parts In-Stock

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Northwest PG Solutions

USA . 1,395 parts In-Stock

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1,395

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Corphita

USA . 1,193 parts In-Stock

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UHIMA Technologies

Türkiye . 309 parts In-Stock

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Corohmni

South Africa . 128 parts In-Stock

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Native Components

USA . 76 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Onsemi with the 2SA2039TP-FA PNP transistor. Perfect for a wide range of applications, this single configuration transistor offers a maximum power dissipation of 15W and a minimum DC current gain of 200, ensuring optimal performance in any project. Trust Onsemi to deliver innovative solutions that meet your needs and exceed your expectations. Choose the 2SA2039TP-FA for superior results every time.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often used in amplification applications due to their high input impedance and low output impedance, making this product suitable for signal amplification.

Configuration: SINGLE

Single configuration transistors are simpler to use and integrate into circuits, making this product user-friendly for basic electronic designs.

Surface Mount: YES

Surface mount transistors are space-saving and easy to assemble onto PCBs, making this product ideal for compact electronic devices with limited space.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this product can handle power loads efficiently and reliably, suitable for applications requiring high power handling capabilities.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures stable and consistent amplification of input signals, making this product reliable for signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without sacrificing performance, ideal for applications in hot environments or where temperature fluctuations may occur.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, this product is suitable for power circuits and applications requiring high current-carrying capabilities.

Technical Specifications

Other Function Transistors 2SA2039TP-FA attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA2039TP-FA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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