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2SA2040TP

Onsemi

2SA2040TP by Onsemi

The Onsemi 2SA2040TP is a PNP transistor with max power dissipation of 15W, min DC current gain of 200, and max collector current of 8A. Ideal for applications requiring high-power amplification in electronic circuits operating up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,048 parts In-Stock

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2,048

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Digiode

USA . 1,816 parts In-Stock

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1,816

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Distributors (Availability)

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Native Components

USA . 445 parts In-Stock

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$0.205

100+ parts

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$0.197

445

$0.205

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$0.197

Northwest PG Solutions

USA . 418 parts In-Stock

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$0.225

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$0.199

418

$0.225

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$0.199

SupplyDigital Components

Austria . 6,525 parts In-Stock

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6,525

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Kulean Microsystems

USA . 2,977 parts In-Stock

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2,977

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Problanco Electronics

Mexico . 2,935 parts In-Stock

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2,935

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Corphita

USA . 2,085 parts In-Stock

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2,085

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TANS Electronics

Latvia . 1,193 parts In-Stock

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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890

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Corohmni

South Africa . 498 parts In-Stock

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Overview

Elevate your electronic projects with the reliable 2SA2040TP PNP transistor from Onsemi. Crafted with precision and expertise, Onsemi's reputation for quality shines through in every aspect of this product. Perfect for a range of applications, this transistor offers superior performance and durability. Experience the value and benefits of using the 2SA2040TP in your designs, knowing that you are getting a top-tier product that will exceed your expectations. Trust Onsemi to deliver excellence in every component.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are known for their high current capability and fast switching speeds, making them suitable for use in power amplifiers and switching circuits.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and offer simpler design compared to multiple configuration transistors.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring reliability in demanding applications.

Minimum DC Current Gain (hFE): 200

A high minimum current gain ensures that the transistor can provide sufficient amplification for signals, improving overall circuit performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to operate in harsh environments without degradation in performance, making it suitable for industrial applications.

Maximum Collector Current (IC): 8 A

The high maximum collector current rating enables this transistor to handle large currents, making it ideal for power switching applications where high current is required.

Technical Specifications

Other Function Transistors 2SA2040TP attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

8 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA2040TP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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