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2SA2039TP

Onsemi

2SA2039TP by Onsemi

The Onsemi 2SA2039TP is a PNP transistor with max power dissipation of 15W, min hFE of 200, and max IC of 5A. Ideal for applications requiring high current amplification in a single configuration, such as audio amplifiers or power supply circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,110 parts In-Stock

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2,110

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Digiode

USA . 314 parts In-Stock

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314

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Problanco Electronics

Mexico . 5,813 parts In-Stock

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5,813

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Kulean Microsystems

USA . 4,694 parts In-Stock

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4,694

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SupplyDigital Components

Austria . 1,997 parts In-Stock

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1,997

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Northwest PG Solutions

USA . 986 parts In-Stock

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986

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TANS Electronics

Latvia . 836 parts In-Stock

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836

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UHIMA Technologies

Türkiye . 601 parts In-Stock

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601

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Corohmni

South Africa . 400 parts In-Stock

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400

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Corphita

USA . 380 parts In-Stock

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380

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Native Components

USA . 345 parts In-Stock

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345

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Overview

Experience the superior quality and reliability of the 2SA2039TP by Onsemi, a leading manufacturer in the industry. This PNP transistor offers exceptional performance and efficiency for a variety of applications. From amplifiers to power supplies, this product provides customers with unmatched value and benefits, including high power dissipation, reliable DC current gain, and a maximum operating temperature of 150 °C. Trust Onsemi to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are generally used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the product easier to use.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows this product to handle demanding applications without overheating.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the product can withstand harsh environmental conditions.

Maximum Collector Current (IC): 5 A

High collector current rating allows the product to handle high-current applications with ease.

Technical Specifications

Other Function Transistors 2SA2039TP attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA2039TP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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