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2SA2062

Onsemi

2SA2062 by Onsemi

The Onsemi 2SA2062 is a PNP transistor with max power dissipation of 110W, hFE of 35, and max collector current of 10A. Ideal for high-power applications in electronics due to its single configuration and operating temp up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,203 parts In-Stock

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Digiode

USA . 1,445 parts In-Stock

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Kulean Microsystems

USA . 6,670 parts In-Stock

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Kepictronics

USA . 4,800 parts In-Stock

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TANS Electronics

Latvia . 4,584 parts In-Stock

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SupplyDigital Components

Austria . 4,284 parts In-Stock

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Problanco Electronics

Mexico . 4,183 parts In-Stock

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Corphita

USA . 1,785 parts In-Stock

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Northwest PG Solutions

USA . 1,371 parts In-Stock

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UHIMA Technologies

Türkiye . 665 parts In-Stock

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Corohmni

South Africa . 84 parts In-Stock

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Native Components

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Overview

Elevate your electronic projects with the 2SA2062 from Onsemi, a trusted manufacturer known for high-quality components. This PNP transistor offers a maximum power dissipation of 110W and a maximum collector current of 10A, making it perfect for a wide range of applications. Whether you're designing amplifiers, switching circuits, or voltage regulators, this single configuration transistor with a minimum DC current gain of 35 has got you covered. Experience unmatched performance and reliability with the 2SA2062, designed to meet all your project needs effortlessly.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors typically have higher current gain and faster switching speeds compared to NPN transistors, making them suitable for many different applications.

Configuration: SINGLE

Single configuration transistors are easy to implement and troubleshoot in circuits, making this product user-friendly.

Maximum Power Dissipation (Abs): 110 W

With a high maximum power dissipation, this transistor can handle large amounts of power without overheating, making it reliable for high-power applications.

Minimum DC Current Gain (hFE): 35

A high minimum DC current gain ensures consistent amplification of the input signal, improving overall performance and efficiency of the circuit.

Maximum Operating Temperature: 150 °C

The wide maximum operating temperature range allows this transistor to function well in a variety of environmental conditions, increasing its versatility.

Maximum Collector Current (IC): 10 A

With a high maximum collector current, this transistor is capable of handling large current loads, making it suitable for high-power applications.

Technical Specifications

Other Function Transistors 2SA2062 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

35

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA2062 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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