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2SA2121O(Q)

Toshiba

2SA2121O(Q) by Toshiba

Toshiba's 2SA2121O(Q) is a PNP transistor with max power dissipation of 220W, hFE of 80, and IC of 15A. Ideal for applications requiring high current amplification in single configuration at up to 150°C operating temperature.

Median Price

$1.856

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Chip1Stop

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Ampacity Inc.

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Corohmni

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Overview

Discover the superior quality and reliability of Toshiba's 2SA2121O(Q) PNP transistor! Perfect for a variety of applications, this single configuration transistor offers a maximum power dissipation of 220W and a minimum DC current gain of 80. With a maximum collector current of 15A, this transistor can handle high-power tasks with ease. Trust in Toshiba's reputation for excellence and unlock the potential of your projects with the 2SA2121O(Q)!

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often used in high power applications and are suitable for switching and amplification circuits.

Configuration: SINGLE

Single configuration transistors are easy to implement and troubleshoot, making them a reliable choice for various electronic circuits.

Maximum Power Dissipation (Abs): 220 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, making it suitable for high power applications.

Minimum DC Current Gain (hFE): 80

A high DC current gain indicates good amplification capabilities, ensuring the transistor can effectively amplify signals in various electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function reliably in a wide range of environments, making it versatile and durable.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor can handle high currents, making it suitable for power applications where high current capabilities are required.

Technical Specifications

Other Function Transistors 2SA2121O(Q) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

80

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA2121O(Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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