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2SA2011

Onsemi

2SA2011 by Onsemi

The Onsemi 2SA2011 is a PNP transistor with a max power dissipation of 3.5W and max collector current of 6A. With hFE of 200, it operates up to 150 °C, suitable for various applications in electronics requiring high current amplification and switching capabilities in surface-mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,295 parts In-Stock

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2,295

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Digiode

USA . 1,884 parts In-Stock

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1,884

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 544 parts In-Stock

1+ parts

$0.194

100+ parts

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$0.187

544

$0.194

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$0.187

Northwest PG Solutions

USA . 1,250 parts In-Stock

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$0.214

100+ parts

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$0.189

1,250

$0.214

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$0.189

Kulean Microsystems

USA . 7,941 parts In-Stock

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7,941

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Problanco Electronics

Mexico . 6,620 parts In-Stock

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6,620

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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2,900

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Corphita

USA . 1,834 parts In-Stock

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1,834

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SupplyDigital Components

Austria . 1,691 parts In-Stock

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1,691

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TANS Electronics

Latvia . 888 parts In-Stock

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888

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Corohmni

South Africa . 404 parts In-Stock

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404

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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40

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Overview

Elevate your projects with the 2SA2011 PNP transistor by Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for a variety of applications. Whether you're working on audio amplifiers, voltage regulators, or signal processing circuits, this transistor offers superior performance and durability. Say goodbye to subpar components and hello to a world of possibilities with the 2SA2011. Add value to your projects and experience the benefits of using top-notch components from Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are suitable for applications requiring positive voltage control, making this product versatile for various circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easier integration into electronic systems.

Surface Mount: YES

Surface mount capability enables easy and secure placement on circuit boards, saving space and ensuring stable connections.

Maximum Power Dissipation (Abs): 3.5 W

With a maximum power dissipation of 3.5 W, this product can handle high power applications without overheating or damage.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures reliable amplification of signals in the circuit, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to operate in demanding conditions without performance degradation.

Maximum Collector Current (IC): 6 A

A high maximum collector current of 6 A enables this transistor to handle larger current loads, making it ideal for power applications.

Technical Specifications

Other Function Transistors 2SA2011 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

6 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA2011 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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