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2SA2014

Onsemi

2SA2014 by Onsemi

The Onsemi 2SA2014 is a PNP transistor with max power dissipation of 3.5W, hFE of 200, and max collector current of 9A. Ideal for applications requiring high current amplification in surface mount configurations at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,727 parts In-Stock

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Vyrian

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Native Components

USA . 871 parts In-Stock

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$0.132

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$0.127

871

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Northwest PG Solutions

USA . 2,257 parts In-Stock

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$0.146

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TANS Electronics

Latvia . 7,394 parts In-Stock

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Kulean Microsystems

USA . 7,205 parts In-Stock

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Problanco Electronics

Mexico . 6,628 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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SupplyDigital Components

Austria . 2,242 parts In-Stock

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Corphita

USA . 1,572 parts In-Stock

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UHIMA Technologies

Türkiye . 356 parts In-Stock

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Corohmni

South Africa . 134 parts In-Stock

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Overview

Experience the superior quality and performance of the 2SA2014 by Onsemi, a leading manufacturer known for their innovative solutions. This PNP transistor offers unmatched reliability and efficiency in various applications. From amplifiers to power management systems, this single configuration surface mount transistor delivers exceptional results. Unlock new possibilities with the 2SA2014 and elevate your projects with its maximum power dissipation of 3.5W and maximum collector current of 9A. Choose Onsemi for cutting-edge technology and unparalleled value.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications where the load is connected to the positive side of the power supply, making this product suitable for such applications.

Configuration: SINGLE

Having a single configuration simplifies the circuit design and makes it easier to integrate into various electronic devices.

Surface Mount: YES

Surface mount technology allows for smaller and more compact designs, making this product ideal for space-constrained applications.

Maximum Power Dissipation (Abs): 3.5 W

With a high power dissipation capability, this product can handle higher power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 200

A high DC current gain ensures that the transistor can amplify small input signals effectively, making it suitable for use in signal amplification circuits.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures allows this product to be used in a wide range of environments without the risk of overheating.

Maximum Collector Current (IC): 9 A

The high collector current rating means that this transistor can handle high currents, making it suitable for power applications where high current levels are required.

Technical Specifications

Other Function Transistors 2SA2014 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

9 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA2014 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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