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2SA2012

Onsemi

2SA2012 by Onsemi

The Onsemi 2SA2012 is a PNP transistor with max power dissipation of 3.5W, hFE of 200, and max collector current of 5A. Ideal for applications requiring high current amplification in surface-mount configurations at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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< 1k

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Vyrian

USA . 527 parts In-Stock

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Digiode

USA . 194 parts In-Stock

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Native Components

USA . 788 parts In-Stock

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$8.780

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788

$8.780

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Northwest PG Solutions

USA . 1,371 parts In-Stock

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$9.658

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$8.692

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Problanco Electronics

Mexico . 4,850 parts In-Stock

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TANS Electronics

Latvia . 3,701 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 2,924 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Corphita

USA . 1,420 parts In-Stock

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Kulean Microsystems

USA . 1,302 parts In-Stock

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UHIMA Technologies

Türkiye . 693 parts In-Stock

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Corohmni

South Africa . 109 parts In-Stock

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Overview

Unleash the power of innovation with the 2SA2012 by Onsemi. Crafted with precision and expertise, this PNP transistor is designed to deliver exceptional performance in a variety of applications. From amplifiers to voltage regulators, this versatile component offers reliability and efficiency like no other. Trust in Onsemi's reputation for excellence and experience the value and benefits that the 2SA2012 brings to your projects. Elevate your creations with the quality and advantages of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are known for their high current gain and fast switching speeds, making them ideal for various applications in electronics.

Configuration: SINGLE

Single configuration transistors are simpler to use and require less external components, making them easier to integrate into circuits.

Surface Mount: YES

Surface mount transistors are convenient for automated assembly processes and take up less space on a circuit board compared to through-hole components.

Maximum Power Dissipation (Abs): 3.5 W

The high maximum power dissipation of 3.5W allows this transistor to handle more power without overheating, providing reliability in power-hungry applications.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor is capable of amplifying the input signal significantly, making it suitable for amplification circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to withstand higher temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 5 A

The high maximum collector current of 5A allows this transistor to handle large currents, making it ideal for power control and switching applications.

Technical Specifications

Other Function Transistors 2SA2012 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA2012 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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