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2SA2015

Onsemi

2SA2015 by Onsemi

The Onsemi 2SA2015 is a PNP transistor with a max power dissipation of 3.5W and max collector current of 8A. With hFE of 200, it operates up to 150 °C, suitable for various applications in electronics due to its single configuration and surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,079 parts In-Stock

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2,079

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Vyrian

USA . 2,060 parts In-Stock

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2,060

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 528 parts In-Stock

1+ parts

$0.144

100+ parts

-

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$0.138

528

$0.144

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-

$0.138

Northwest PG Solutions

USA . 1,235 parts In-Stock

1+ parts

$0.158

100+ parts

-

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$0.139

1,235

$0.158

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$0.139

SupplyDigital Components

Austria . 6,524 parts In-Stock

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6,524

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Kulean Microsystems

USA . 4,615 parts In-Stock

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4,615

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TANS Electronics

Latvia . 3,704 parts In-Stock

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3,704

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Problanco Electronics

Mexico . 1,473 parts In-Stock

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1,473

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Corphita

USA . 1,345 parts In-Stock

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1,345

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Corohmni

South Africa . 324 parts In-Stock

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324

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UHIMA Technologies

Türkiye . 115 parts In-Stock

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Overview

Elevate your electronic projects with the reliable 2SA2015 by Onsemi. Crafted by a trusted manufacturer, this PNP transistor offers superior performance in various applications. Whether you're looking to amplify signals or regulate power, this single-channel transistor with a maximum collector current of 8A and minimum DC current gain of 200 delivers exceptional quality and efficiency. Upgrade your designs with the 2SA2015 and experience unmatched value and benefits.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often used in applications where a positive voltage is being switched.

Configuration: SINGLE

Single configuration makes it easier to design circuits and simplifies the overall setup.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 3.5 W

With a high power dissipation capability, this transistor can handle higher loads without overheating.

Minimum DC Current Gain (hFE): 200

A high DC current gain ensures efficient amplification and signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments.

Maximum Collector Current (IC): 8 A

The ability to handle up to 8A of current makes this transistor suitable for applications requiring higher current levels.

Technical Specifications

Other Function Transistors 2SA2015 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

8 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SA2015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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