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2SA2025

Onsemi

2SA2025 by Onsemi

The Onsemi 2SA2025 is a PNP transistor with max power dissipation of 0.55W, min DC current gain of 200, and max collector current of 3A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,138 parts In-Stock

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Vyrian

USA . 382 parts In-Stock

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382

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Kulean Microsystems

USA . 7,568 parts In-Stock

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TANS Electronics

Latvia . 2,753 parts In-Stock

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Problanco Electronics

Mexico . 1,978 parts In-Stock

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SupplyDigital Components

Austria . 1,799 parts In-Stock

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Native Components

USA . 970 parts In-Stock

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UHIMA Technologies

Türkiye . 756 parts In-Stock

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Corphita

USA . 716 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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Northwest PG Solutions

USA . 75 parts In-Stock

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Overview

Elevate your electronic projects with the reliable 2SA2025 PNP transistor from Onsemi. Manufactured by a trusted industry leader, this versatile component is perfect for a wide range of applications. Whether you're building audio amplifiers, voltage regulators, or power supplies, the 2SA2025 delivers exceptional performance and durability. Experience the value and benefits of using high-quality transistors in your designs with the 2SA2025 from Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors allow for easy control of higher power loads compared to NPN transistors, making this product suitable for applications requiring higher current capabilities.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the product easy to use in various electronic applications.

Maximum Power Dissipation (Abs): 0.55 W

With a maximum power dissipation of 0.55 W, this transistor can handle moderate power loads efficiently, providing reliability in operation.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures a consistent and stable performance of the transistor, making it a reliable choice for amplification purposes.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to withstand elevated temperatures without compromising its performance, ensuring longevity and reliability.

Maximum Collector Current (IC): 3 A

The high maximum collector current of 3 A enables the transistor to handle higher current levels, making it suitable for applications that require power switching or amplification.

Technical Specifications

Other Function Transistors 2SA2025 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA2025 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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