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2SA2063

Onsemi

2SA2063 by Onsemi

The Onsemi 2SA2063 is a PNP transistor with max power dissipation of 130W, max collector current of 12A, and min DC current gain of 35. Ideal for applications requiring high-power amplification in single configuration at up to 150 °C operating temperature.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Kulean Microsystems

USA . 7,821 parts In-Stock

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SupplyDigital Components

Austria . 5,809 parts In-Stock

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Kepictronics

USA . 4,800 parts In-Stock

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Northwest PG Solutions

USA . 1,589 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,031 parts In-Stock

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TANS Electronics

Latvia . 902 parts In-Stock

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UHIMA Technologies

Türkiye . 650 parts In-Stock

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Corohmni

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Overview

Experience the unmatched quality and reliability of Onsemi with the 2SA2063 PNP transistor. Perfect for a variety of applications, this single configuration transistor offers a maximum power dissipation of 130W and a maximum collector current of 12A. With a minimum DC current gain of 35 and a maximum operating temperature of 150 °C, this transistor provides exceptional performance and durability. Trust Onsemi for all your electronics needs and discover the value and benefits that the 2SA2063 brings to your projects.

Feature Benefit Bullets

Polarity or Channel Type: PNP

The PNP polarity allows for easy switching between on and off states, making it suitable for various applications.

Configuration: SINGLE

The single configuration simplifies the setup and installation process, making it user-friendly.

Maximum Power Dissipation (Abs): 130 W

With a high maximum power dissipation, this product can handle high power loads efficiently without overheating.

Minimum DC Current Gain (hFE): 35

The high minimum DC current gain ensures reliable amplification of signals, improving overall performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in extreme environmental conditions.

Maximum Collector Current (IC): 12 A

The high maximum collector current ensures the product can handle high currents, making it suitable for a wide range of applications.

Technical Specifications

Other Function Transistors 2SA2063 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

35

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SA2063 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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