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MT28EW128ABA1HPC-0SIT

Micron Technology

MT28EW128ABA1HPC-0SIT by Micron Technology

Micron Technology's MT28EW128ABA1HPC-0SIT is an 8MX16 flash memory IC with 134217728-bit density. Operating at 3V, it offers a max access time of 70ns and supports asynchronous mode. Ideal for industrial applications, this low-profile grid array package has a rectangular shape and features parallel interface with 8388608 words capacity.

Median Price

$8.933

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 990 parts In-Stock

1+ parts

$6.690

100+ parts

$5.860

1k+ parts

-

10k+ parts

$5.850

990

$6.690

$5.860

-

$5.850

Farnell

UK . 298 parts In-Stock

1+ parts

$8.933

100+ parts

$6.313

1k+ parts

$6.183

10k+ parts

-

298

$8.933

$6.313

$6.183

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EBV Elektronik

Germany . 4,416 parts In-Stock

1+ parts

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4,416

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Verical

USA . 328 parts In-Stock

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$10.489

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328

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$10.489

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,496 parts In-Stock

1+ parts

$6.479

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-

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2,496

$6.479

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$6.508

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10

$6.508

-

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NAC Semi

USA . 22,132 parts In-Stock

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$8.150

22,132

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$8.150

Chip Stock

USA . 6,049 parts In-Stock

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6,049

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Cyclops Electronics Ltd

UK . 4,355 parts In-Stock

1+ parts

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4,355

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Bristol Electronics

USA . 500 parts In-Stock

1+ parts

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500

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Atlantic Semiconductor

USA . 500 parts In-Stock

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500

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Vyrian

USA . 167 parts In-Stock

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167

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BCID Electronics Ltd.

Israel . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 800 parts In-Stock

1+ parts

$2.490

100+ parts

-

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800

$2.490

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Corohmni

South Africa . 240 parts In-Stock

1+ parts

$4.446

100+ parts

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240

$4.446

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Corphita

USA . 1,089 parts In-Stock

1+ parts

$6.138

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1,089

$6.138

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Continental Prestige Electronics

USA . 703 parts In-Stock

1+ parts

$6.508

100+ parts

-

1k+ parts

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10k+ parts

$6.378

703

$6.508

-

-

$6.378

Ampacity Inc.

Singapore . 861 parts In-Stock

1+ parts

$12.620

100+ parts

-

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861

$12.620

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A-Z Elektronik GmbH

Germany . 10,120 parts In-Stock

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Resion (Excess)

USA . 8,000 parts In-Stock

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8,000

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Perfect Parts

USA . 6,100 parts In-Stock

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RC Electronics

USA . 5,468 parts In-Stock

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5,468

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GreenTree Electronics

Israel . 3,659 parts In-Stock

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3,659

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Argo Parts USA

USA . 3,040 parts In-Stock

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3,040

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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XScomponents

USA . 467 parts In-Stock

1+ parts

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$7.980

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467

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$7.980

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Kepictronics

USA . 58 parts In-Stock

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ChipstoGo Electronic ltd

UK . 16 parts In-Stock

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16

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Overview

Enhance your devices with the cutting-edge MT28EW128ABA1HPC-0SIT from Micron Technology. As a leading manufacturer in the industry, Micron ensures top-notch quality and reliability in their flash memory products. Ideal for a wide range of applications, this flash memory offers unparalleled value with its high performance, low power consumption, and wide operating temperature range. Upgrade your systems with Micron's innovative technology and experience seamless operation and enhanced efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

The surface-mount feature allows for easy installation in a variety of devices, making this flash memory versatile and convenient to use.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact design, ideal for saving space in electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for efficient data transfer, making this flash memory a high-performance option.

Nominal Supply Voltage: 3V

With a nominal supply voltage of 3V, this flash memory is compatible with a wide range of electronic devices.

No. of Terminals: 64

The 64 terminals offer ample connectivity options, ensuring compatibility with various systems and devices.

Package Style: GRID ARRAY, LOW PROFILE

The grid array and low profile design make this flash memory easy to integrate into compact devices, without sacrificing performance.

Alternate Memory Width: 8

The 8-bit memory width provides efficient data storage and retrieval capabilities, making this flash memory a suitable option for many applications.

Maximum Operating Temperature: 85°C

With a maximum operating temperature of 85°C, this flash memory can withstand high heat environments, ensuring reliable performance in challenging conditions.

Organization: 8MX16

The 8MX16 organization offers a large memory capacity, making this flash memory suitable for storing a vast amount of data.

Technical Specifications

Flash Memory MT28EW128ABA1HPC-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

70 ns

Alternate Memory Width:

8

JESD-30 Code:

R-PBGA-B64

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11 mm

Trade Compliance

MT28EW128ABA1HPC-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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