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MT28EW01GABA1LPC-0SIT

Micron Technology

MT28EW01GABA1LPC-0SIT by Micron Technology

Micron Technology's MT28EW01GABA1LPC-0SIT is a 64MX16 flash memory with 67108864 words and 1073741824 bit density. Operating at 3V, it has a max access time of 95ns and supports asynchronous mode. Ideal for industrial applications, this low-profile grid array package measures 13mm x 11mm with a terminal pitch of 1mm.

Median Price

$20.774

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 275 parts In-Stock

1+ parts

$18.533

100+ parts

$15.611

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-

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275

$18.533

$15.611

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Farnell

UK . 275 parts In-Stock

1+ parts

$20.774

100+ parts

$15.979

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-

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275

$20.774

$15.979

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DigiKey

USA . 48 parts In-Stock

1+ parts

$30.290

100+ parts

$25.819

1k+ parts

$24.960

10k+ parts

-

48

$30.290

$25.819

$24.960

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Mouser Electronics

USA . 93 parts In-Stock

1+ parts

$41.080

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93

$41.080

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Newark

USA . 1,008 parts In-Stock

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$152.370

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1,008

$152.370

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Future Electronics

Canada . 5,520 parts In-Stock

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$10.640

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5,520

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$10.640

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Verical

USA . 2,000 parts In-Stock

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$13.180

2,000

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$13.180

Avnet

USA . 1,010 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 146 parts In-Stock

1+ parts

$17.309

100+ parts

-

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146

$17.309

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Nova Conductors

Japan . 75 parts In-Stock

1+ parts

$17.570

100+ parts

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75

$17.570

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Chip Stock

USA . 10,800 parts In-Stock

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10,800

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Cyclops Electronics Ltd

UK . 1,104 parts In-Stock

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Component Sense

UK . 356 parts In-Stock

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356

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Bristol Electronics

USA . 318 parts In-Stock

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318

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Vyrian

USA . 224 parts In-Stock

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224

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NAC Semi

USA . 47 parts In-Stock

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$21.160

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$21.160

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 169 parts In-Stock

1+ parts

$2.921

100+ parts

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169

$2.921

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Aztec Data Supply Inc.

USA . 22,372 parts In-Stock

1+ parts

$4.250

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22,372

$4.250

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iBuyXS LLC

. 40,000 parts In-Stock

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$10.500

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$10.500

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Ampacity Inc.

Singapore . 566 parts In-Stock

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$13.750

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566

$13.750

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Corphita

USA . 1,386 parts In-Stock

1+ parts

$16.398

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1,386

$16.398

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Continental Prestige Electronics

USA . 5,440 parts In-Stock

1+ parts

$17.570

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$17.219

5,440

$17.570

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$17.219

BidChips

USA . 40,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,662 parts In-Stock

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Argo Parts USA

USA . 2,815 parts In-Stock

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Perfect Parts

USA . 2,491 parts In-Stock

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Microchip USA

USA . 1,331 parts In-Stock

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Futuretech Components

Singapore . 800 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$17.219

1k+ parts

$16.692

10k+ parts

$16.341

100

-

$17.219

$16.692

$16.341

Overview

Elevate your electronics with the MT28EW01GABA1LPC-0SIT from Micron Technology. This cutting-edge flash memory solution offers unmatched quality and reliability, perfect for a wide range of applications. With its industrial-grade temperature rating and high memory density, this product delivers exceptional performance and value to customers. Upgrade your devices today and experience the advantages of Micron Technology's top-tier technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it ideal for portable devices.

Surface Mount: YES

With surface mount capability, this flash memory can be easily integrated into compact electronic designs, saving space.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of board space, making it suitable for applications where space is limited.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to data, improving overall performance and efficiency.

Nominal Supply Voltage: 3V

The 3V supply voltage ensures compatibility with a wide range of devices, making it versatile and easy to integrate into various systems.

No. of Terminals: 64

Having 64 terminals provides ample connectivity options, enabling the flash memory to handle large amounts of data effectively.

Package Style: GRID ARRAY, LOW PROFILE

The low profile grid array package style offers a compact form factor without compromising on performance, making it ideal for slim devices.

Maximum Operating Temperature: 85 °C

With a high operating temperature range of up to 85°C, this flash memory can withstand harsh environmental conditions.

Organization: 64MX16

The 64MX16 organization allows for efficient data handling and storage, enhancing the overall performance of the product.

Minimum Operating Temperature: -40 °C

The ability to operate in temperatures as low as -40°C makes this flash memory suitable for use in extreme cold environments.

Technical Specifications

Flash Memory MT28EW01GABA1LPC-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

95 ns

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

64

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11 mm

Trade Compliance

MT28EW01GABA1LPC-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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