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MT29F1T08CUCCBH8-6R:C

Micron Technology

MT29F1T08CUCCBH8-6R:C by Micron Technology

MT29F1T08CUCCBH8-6R:C by Micron Technology is a Flash Memory with 128GX8 organization, 3.3V nominal voltage, and 1099511627776 bit memory density. It is used in applications requiring high-speed data storage and retrieval, such as smartphones, tablets, and solid-state drives (SSDs).

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,417 parts In-Stock

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5,417

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Digiode

USA . 2,241 parts In-Stock

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2,241

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Semi Source

USA . 108 parts In-Stock

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108

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Nova Conductors

Japan . 69 parts In-Stock

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69

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 164 parts In-Stock

1+ parts

$3.280

100+ parts

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164

$3.280

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Corohmni

South Africa . 136 parts In-Stock

1+ parts

$4.956

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136

$4.956

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AZTECH Wire

Italy . 827 parts In-Stock

1+ parts

$8.393

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827

$8.393

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Ampacity Inc.

Singapore . 1,410 parts In-Stock

1+ parts

$18.000

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1,410

$18.000

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Continental Prestige Electronics

USA . 6,969 parts In-Stock

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6,969

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A-Z Elektronik GmbH

Germany . 5,300 parts In-Stock

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5,300

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Argo Parts USA

USA . 1,795 parts In-Stock

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1,795

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Perfect Parts

USA . 806 parts In-Stock

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806

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Futuretech Components

Singapore . 800 parts In-Stock

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800

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Corphita

USA . 497 parts In-Stock

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497

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Microchip USA

USA . 371 parts In-Stock

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371

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience the next level of performance and reliability with the MT29F1T08CUCCBH8-6R:C by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality flash memory products that are built to last. This flash memory device is ideal for a wide range of applications, offering seamless operation in both synchronous and asynchronous modes. With its compact design and low profile package style, it seamlessly integrates into any system. Whether you're a professional or a tech-savvy individual, this product is designed to meet your needs. Trust Micron Technology for superior quality and unparalleled value.

Feature Benefit Bullets

High Memory Density (1099511627776 bit)

The product offers a large storage capacity, allowing customers to store and access a vast amount of data. This is especially beneficial for users who need to store large files or run memory-intensive applications. The high memory density contributes to the overall value of the product by providing ample space for data storage and retrieval.

Fast Operating Mode (Synchronous/Asynchronous)

The product can operate in both synchronous and asynchronous modes, providing flexibility to the customer. In synchronous mode, data transfer is synchronized with an external clock signal, ensuring reliable and efficient communication with other devices. In asynchronous mode, the product can operate independently without relying on an external clock, allowing for more flexible and versatile usage scenarios. This feature benefits the customer by enabling them to choose the mode that best suits their specific needs and contributes to the overall value of the product by enhancing its compatibility and performance.

Wide Operating Temperature Range (0°C to 70°C)

The product is designed to perform reliably across a wide temperature range, making it suitable for various environments and applications. Whether it's used in extreme heat or cold, the product will continue to function properly, ensuring uninterrupted operation and data integrity. This wide operating temperature range benefits customers by giving them the flexibility to use the product in diverse settings, increasing its practicality and reliability.

Low Profile Package Style (1.4 mm Maximum Seated Height)

The product features a low profile package style, which means it has a compact and slim design. This is advantageous for customers who have limited space or require a sleek and unobtrusive solution. The low profile package style contributes to the overall value of the product by offering convenience and ease of integration in tight spaces or small form factor devices.

High Speed Parallel Interface (128GX8, 8-bit Memory Width, 1 mm Terminal Pitch)

The product utilizes a high-speed parallel interface, allowing for fast and efficient data transfer. With a wide memory width of 8 bits and a small terminal pitch of 1 mm, the product can handle large volumes of data quickly and reliably. This high-speed parallel interface benefits customers who require fast data processing or real-time applications, enhancing their productivity and overall user experience.

Reliable Flash Memory Technology (MLC NAND Type)

The product utilizes MLC NAND flash memory technology, known for its reliability and durability. This ensures that the customer's data is stored securely and can be accessed without errors or data corruption. The reliable flash memory technology contributes to the overall value of the product by providing peace of mind and confidence in the longevity and integrity of the stored data.

Technical Specifications

Flash Memory MT29F1T08CUCCBH8-6R:C attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B152

Length:

18 mm

Memory Density:

1099511627776 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

152

No. of Words:

137438953472 words

No. of Words Code:

128G

Operating Mode:

SYNCHRONOUS/ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

MLC NAND TYPE

Width:

14 mm

Trade Compliance

MT29F1T08CUCCBH8-6R:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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