Loading...

APT75GT120JU2

Microchip Technology

APT75GT120JU2 by Microchip Technology

Microchip Technology's APT75GT120JU2 is an N-CHANNEL IGBT with a max VCEsat of 2.1V and 100A IC. Ideal for power control applications, it features a built-in diode, 1200V VCE, and 416W power dissipation in a rectangular package with flange mount style.

Median Price

$27.525

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 33 parts In-Stock

1+ parts

$27.180

100+ parts

-

1k+ parts

-

10k+ parts

-

33

$27.180

-

-

-

Mouser Electronics

USA . 37 parts In-Stock

1+ parts

$27.870

100+ parts

-

1k+ parts

-

10k+ parts

-

37

$27.870

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,933 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,933

-

-

-

-

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 213 parts In-Stock

1+ parts

$1.317

100+ parts

-

1k+ parts

-

10k+ parts

-

213

$1.317

-

-

-

Aztec Data Supply Inc.

USA . 1,018 parts In-Stock

1+ parts

$1.582

100+ parts

-

1k+ parts

-

10k+ parts

-

1,018

$1.582

-

-

-

AZTECH Wire

Italy . 819 parts In-Stock

1+ parts

$15.428

100+ parts

-

1k+ parts

-

10k+ parts

-

819

$15.428

-

-

-

Component Stockers USA

USA . 97 parts In-Stock

1+ parts

$31.460

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$31.460

-

-

-

Microchip USA

USA . 2,007 parts In-Stock

1+ parts

$71.415

100+ parts

-

1k+ parts

-

10k+ parts

-

2,007

$71.415

-

-

-

Argo Parts USA

USA . 4,299 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,299

-

-

-

-

Glotronic Ltd.

UK . 3,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,300

-

-

-

-

Continental Prestige Electronics

USA . 3,114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,114

-

-

-

-

West Coast Incorporated

USA . 1,803 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,803

-

-

-

-

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Perfect Parts

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Overview

Elevate your power control applications with the APT75GT120JU2 by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like this N-CHANNEL transistor with built-in diode. With a maximum collector-emitter voltage of 1200V and a maximum gate-emitter voltage of 20V, this product offers unparalleled performance and reliability. Experience faster turn-off and turn-on times with nominal values of 610ns and 335ns respectively, ensuring efficient power control. Trust in the APT75GT120JU2 for all your high-power needs.

Feature Benefit Bullets

Polarity or Channel Type

N-channel IGBTs offer lower conduction losses and higher efficiency compared to P-channel IGBTs, making this product a good choice for power control applications.

Maximum VCEsat

The low VCEsat value of 2.1 V indicates minimal voltage drop across the collector-emitter junction when the device is conducting, resulting in lower power dissipation and higher efficiency.

Maximum Operating Temperature

With a high maximum operating temperature of 150°C, this IGBT can withstand high-temperature environments, making it suitable for various industrial applications.

Maximum Collector-Emitter Voltage

The high maximum collector-emitter voltage of 1200 V allows this IGBT to handle high voltage levels, making it ideal for power control applications requiring high voltage operation.

Maximum Collector Current (IC)

With a high maximum collector current of 100 A, this IGBT can handle high current levels, making it suitable for power control applications that require high current capabilities.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT75GT120JU2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Additional Features:

AVALANCHE RATED, LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

610 ns

Nominal Turn On Time (ton):

335 ns

Maximum VCEsat:

2.1 V

Trade Compliance

APT75GT120JU2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20