Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Median Price
$65.330
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3
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1k+
DigiKey
1+ parts
100+ parts
$49.466
1k+ parts
-
10k+ parts
Digiode
$66.738
Vyrian
$70.250
Native Components
$0.066
$0.063
Northwest PG Solutions
$0.073
$0.064
Corphita
$63.225
Microchip USA
Insulated Gate Bipolar Transistors (IGBT) FP25R12KT4B11BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Peak Reflow Temperature (C):
Maximum Time At Peak Reflow Temperature (s):
FP25R12KT4B11BPSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
ERJ3EKF1002V
Panasonic
Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.
EU2B-YS3103F
Idec
ROTARY SWITCH;
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
LM2931AZ-5.0G
Onsemi
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
BSS138
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
LM317T
Samsung
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;
RC0603JR-070RL
Yageo
Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.
1N4148
Sun Wai Electronic
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2227UA
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
LM358AN
Signetics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Siemens
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
2N2222A
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
IRG4PSH71UDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Collector Current (IC): 99 A; JESD-30 Code: R-PSIP-T3;
F3L75R12W1H3B27BOMA1
Infineon Technologies
Infineon's F3L75R12W1H3B27BOMA1 IGBT features 1200V max collector-emitter voltage, 45A max collector current, and 385ns nominal turn-off time. Ideal for applications requiring high power switching such as motor drives and renewable energy systems.
IRG4PC30FPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
IRG4BC20UD-STRR
IRG4BC20UD-STRR by International Rectifier is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 13A max collector current. It has a built-in diode, 170ns fall time, and 320ns turn off time. Ideal for power control applications requiring high power dissipation up to 60W in surface mount configurations.
FS100R12KT4GBOSA1
FS100R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a toff of 570 ns and ton of 165 ns, suitable for high-power applications. With a max voltage of 1200 V and operating temperature of 150°C, it is commonly used in power electronics for efficient energy conversion.
IRG7PH42UD1PBF
IRG7PH42UD1PBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It has a power dissipation of 313W, making it suitable for power control applications requiring high voltage handling and efficient switching capabilities. With a fall time of 43ns and turn-off time of 460ns, this transistor is ideal for applications where fast switching speeds are crucial.
FS50R12W2T4B11BOMA1
Infineon's FS50R12W2T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 83A IC, and 490ns toff. Ideal for POWER CONTROL applications due to its complex configuration and fast switching times of 185ns ton.
FP15R12W1T4B3BOMA1
Infineon Technologies' FP15R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and nominal turn off time of 495ns. Ideal for power control applications, this UL approved transistor features a rectangular package style with flange mount.
FS150R12KT3BOSA1
Infineon FS150R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current rating of 200A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
FP50R07N2E4B11BOSA1
FP50R07N2E4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 31 terminals, and a max IC of 70 A. It has a VCE of 650 V and toff of 265 ns. Ideal for power control applications due to its fast ton of 43 ns and UL approval.
SKM100GB125DN
Semikron International
SKM100GB125DN by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 100A, and toff of 380ns. Ideal for POWER CONTROL applications, it operates up to 1200V at 150°C with UL RECOGNIZED standards compliance.
FGL60N100BNTDTU
FGL60N100BNTDTU by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1000V and a Max Collector Current of 60A. It has a Nominal Turn Off Time of 760ns and Nominal Turn On Time of 460ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and THROUGH-HOLE terminals.
IXYT25N250CHV
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 937 W; Maximum Collector Current (IC): 95 A; JESD-30 Code: R-PSSO-G2;
5SNA3600E170300
Abb
Abb's 5SNA3600E170300 IGBT features N-CHANNEL polarity, 3600A IC, and 1700V VCE. Ideal for power control applications with a complex configuration and fast ton of 835ns.
IRG4BC30FPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
IRG4BC20WPBF
IRG4BC20WPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max power dissipation of 60W. It has a nominal turn-off time of 300ns, making it ideal for motor control applications requiring fast switching speeds. The package style is flange mount with through-hole terminals, suitable for high-temperature environments up to 150°C.
IRGR4045DPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: POWER CONTROL;
IRG4BC10SD-SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Collector Current (IC): 14 A; Terminal Position: SINGLE;
HGTG40N60C3
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 435 ns; Transistor Element Material: SILICON;
FS450R17KE3
FS450R17KE3 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, 1700V VCEsat, and 605A IC. It features a rectangular package style, 2250W power dissipation, and operates up to 150°C. Ideal for high-power applications requiring fast turn-on/off times and high collector current capabilities.
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FP25R12W2T4PBPSA1
FP25R12W2T4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 39A. It is used for power control applications due to its complex configuration and nominal turn off time of 685ns. The transistor's package style is flange mount with a rectangular shape and isolated case connection.
FP25R12W2T4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 39 A; Package Style (Meter): FLANGE MOUNT; Maximum Collector-Emitter Voltage: 1200 V;
FP25R12KE3BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Terminals: 24; Nominal Turn Off Time (toff): 610 ns;
FP25R12W1T7B11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; No. of Elements: 7; Maximum Gate-Emitter Voltage: 20 V;
FP25R12KT3BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR;
FP25R12W2T4B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 39 A; No. of Terminals: 23; Nominal Turn On Time (ton): 47 ns;
FP25R12W2T4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 39 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Position: UPPER;
FP25R12W2T4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 39 A; Package Body Material: UNSPECIFIED;
FP25R12W2T4P_B11ENG
N-Channel; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn On Time (ton): 47 ns; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
FP25R12U1T4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 39 A; Package Body Material: UNSPECIFIED;
FP25R12KT4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 25 A; Transistor Element Material: SILICON;
FP25R12W1T7
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Position: UPPER; Transistor Application: POWER CONTROL;
FP25R12KT4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Terminal Position: UPPER; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
FP25R12KT3BPSA1
FP25R12U1T4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 39 A; Package Body Material: UNSPECIFIED; Terminal Position: UPPER;
FP25R12KS4C
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON;
FP25R12W1T7_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; No. of Terminals: 23; Maximum Operating Temperature: 175 Cel;
FP25R12KS4CBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
FP25R12KT4B11BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Case Connection: ISOLATED; Reference Standard: UL APPROVED;
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