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DSS4240T-7

Diodes Incorporated

DSS4240T-7 by Diodes Incorporated

DSS4240T-7 by Diodes Inc. is a NPN BJT transistor with 40V VCEO, 2A IC, and 150 hFE. Ideal for switching applications, it operates b/w -55 to 150°C with a max power dissipation of 0.6W. Its small outline package makes it suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 422,503 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.085

10k+ parts

$0.052

422,503

$0.340

$0.130

$0.085

$0.052

Mouser Electronics

USA . 101,109 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.082

10k+ parts

$0.043

101,109

$0.340

$0.130

$0.082

$0.043

Verical

USA . 816,000 parts In-Stock

1+ parts

-

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$0.044

816,000

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$0.044

Future Electronics

Canada . 162,000 parts In-Stock

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$0.042

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$0.042

Arrow

USA . 27,000 parts In-Stock

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$0.050

27,000

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$0.050

Avnet

USA . 12,000 parts In-Stock

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12,000

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IBS Electronics

USA . 294,000 parts In-Stock

1+ parts

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$0.060

294,000

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$0.060

NAC Semi

USA . 18,000 parts In-Stock

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$0.172

18,000

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$0.172

Rutronik

Germany . 6,000 parts In-Stock

1+ parts

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$0.060

6,000

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$0.060

Semtec, LLC

USA . 1,645 parts In-Stock

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1,645

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Prism Electronics

USA . 292 parts In-Stock

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Native Components

USA . 5 parts In-Stock

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$1.420

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5

$1.420

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Northwest PG Solutions

USA . 2,188 parts In-Stock

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$1.562

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2,188

$1.562

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Perfect Parts

USA . 92,448 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 72,398 parts In-Stock

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Futuretech Components

Singapore . 15,000 parts In-Stock

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Eastek

USA . 12,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,838 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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Lixinc

USA . 5,874 parts In-Stock

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iodParts Technologies Inc.

India . 3,095 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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S.R.D Solutions

India . 2,695 parts In-Stock

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2,695

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Overview

Enhance your electronic designs with the DSS4240T-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability. This small signal bipolar junction transistor is perfect for various switching applications, offering superior performance and efficiency. With its NPN configuration and high DC current gain, this transistor provides excellent functionality. Trust in Diodes Incorporated to deliver cutting-edge technology that meets your needs. Upgrade your projects today with the DSS4240T-7 and experience seamless operation and enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Configuration: SINGLE

Single configuration simplifies the circuit design and ensures easier integration.

Transistor Application: SWITCHING

Ideal for applications requiring high-speed switching capabilities, ensuring efficient performance.

Surface Mount: YES

Facilitates easy mounting on PCBs, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape offers easy handling and placement on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide reliable solder connections for enhanced durability.

Maximum Power Dissipation (Abs): 0.6 W

The high power dissipation capability allows the transistor to handle demanding tasks without overheating.

Minimum DC Current Gain (hFE): 150

High DC current gain ensures efficient amplification and performance in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

Suitable for circuits requiring moderate voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and compatibility with standard manufacturing processes.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold conditions, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 2 A

High collector current rating allows the transistor to handle high current loads effectively.

Terminal Finish: MATTE TIN

Matte tin finish provides stable and reliable soldering connections for enhanced performance.

Terminal Position: DUAL

Dual terminal position facilitates easy connections and ensures proper orientation during installation.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes without compromising its performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures high reliability and quality standards for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4240T-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4240T-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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