Loading...

DSS45160FDB-7

Diodes Incorporated

DSS45160FDB-7 by Diodes Incorporated

DSS45160FDB-7 by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 2 separate elements, 6 terminals, hFE of 70, VCE of 60V, and IC of 1A. This silicon transistor operates at a transition frequency of 175MHz in a small outline package suitable for surface mount technology.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.172

54,000

-

-

-

$0.172

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.348

6,000

-

-

-

$0.348

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 68,365 parts In-Stock

1+ parts

$0.600

100+ parts

$0.350

1k+ parts

$0.220

10k+ parts

$0.170

68,365

$0.600

$0.350

$0.220

$0.170

Native Components

USA . 145 parts In-Stock

1+ parts

$31.960

100+ parts

-

1k+ parts

-

10k+ parts

$30.682

145

$31.960

-

-

$30.682

Northwest PG Solutions

USA . 1,794 parts In-Stock

1+ parts

$35.156

100+ parts

-

1k+ parts

-

10k+ parts

-

1,794

$35.156

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,683 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,683

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

iodParts Technologies Inc.

India . 2,899 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.279

10k+ parts

-

2,899

-

-

$0.279

-

Overview

Enhance your electronic projects with the reliable DSS45160FDB-7 by Diodes Incorporated. Known for their top-quality manufacturing, Diodes Incorporated delivers small signal bipolar junction transistors that are perfect for switching applications. With separate NPN and PNP elements, this transistor offers maximum collector-emitter voltage of 60V and a peak reflow temperature of 260°C. Enjoy seamless surface mounting and a compact square package shape for easy integration. Trust Diodes Incorporated to provide cutting-edge technology that meets your needs, ensuring optimal performance and efficiency in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term use.

Polarity or Channel Type: NPN AND PNP

NPN and PNP options allow for versatility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS

Separate 2 elements configuration offers flexibility in circuit applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficiency and high performance.

Surface Mount: YES

Surface mount capability offers ease of installation and space-saving benefits.

Package Shape: SQUARE

Square package shape allows for compact circuit board layout.

Terminal Form: NO LEAD

No lead terminal form simplifies circuit assembly process.

No. of Elements: 2

2 elements provide enhanced circuit design options.

No. of Terminals: 6

6 terminals offer connectivity options and flexibility in circuit connections.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for dense circuit board layouts.

Minimum DC Current Gain (hFE): 70

Minimum DC current gain of 70 ensures consistent and reliable performance.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating of 60V provides safety and reliability in various applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in operation.

Maximum Collector Current (IC): 1 A

Maximum collector current of 1A allows for handling high currents in switching applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel, palladium, gold terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers versatility in circuit connections.

Case Connection: COLLECTOR

Collector case connection enhances heat dissipation and reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures manufacturing and assembly process compatibility.

Nominal Transition Frequency (fT): 175 MHz

High nominal transition frequency of 175 MHz indicates fast switching speeds and high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS45160FDB-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS45160FDB-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 16