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DSS4160V-7

Diodes Incorporated

DSS4160V-7 by Diodes Incorporated

DSS4160V-7 by Diodes Inc. is a NPN BJT with 60V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications requiring high DC current gain (hFE >100) in a compact SOT package. Suitable for surface mount designs operating up to 150°C with flat terminals and matte tin finish.

Median Price

$0.236

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 156 parts In-Stock

1+ parts

$0.420

100+ parts

$0.163

1k+ parts

$0.108

10k+ parts

-

156

$0.420

$0.163

$0.108

-

Mouser Electronics

USA . 97 parts In-Stock

1+ parts

$0.420

100+ parts

$0.163

1k+ parts

$0.108

10k+ parts

$0.090

97

$0.420

$0.163

$0.108

$0.090

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.030

3,000

-

-

-

$0.030

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.051

3,000

-

-

-

$0.051

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.095

-

-

-

Vyrian

USA . 48,259 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

48,259

-

-

-

-

Chip Stock

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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28,000

-

-

-

-

Rutronik

Germany . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

24,000

-

-

-

$0.080

IBS Electronics

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.087

24,000

-

-

-

$0.087

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

6,000

-

-

-

$0.050

ComSIT Distribution GmbH

Germany . 2,501 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,501

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 47,969 parts In-Stock

1+ parts

$0.031

100+ parts

-

1k+ parts

-

10k+ parts

-

47,969

$0.031

-

-

-

Semicontronic

India . 47,875 parts In-Stock

1+ parts

$0.031

100+ parts

$0.030

1k+ parts

$0.030

10k+ parts

-

47,875

$0.031

$0.030

$0.030

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Continental Prestige Electronics

USA . 2,651 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

$0.093

2,651

$0.095

-

-

$0.093

Argo Parts USA

USA . 1,243 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

1,243

$0.095

-

-

$0.092

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.095

100+ parts

$0.093

1k+ parts

-

10k+ parts

-

50

$0.095

$0.093

-

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.038

100+ parts

$1.855

1k+ parts

$1.671

10k+ parts

-

1,000

$2.038

$1.855

$1.671

-

Kepictronics

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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18,000

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-

-

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Infinite Electronics LLP (Excess)

. 9,006 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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9,006

-

-

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Lixinc

USA . 5,997 parts In-Stock

1+ parts

-

100+ parts

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5,997

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-

-

-

Authorized Procurement Solutions

USA . 5,040 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,040

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Perfect Parts

USA . 3,143 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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3,143

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-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.060

10k+ parts

-

3,000

-

-

$0.060

-

Overview

Unlock a world of possibilities with the DSS4160V-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in every product. This small signal bipolar junction transistor (BJT) is versatile and perfect for a wide range of applications. With its NPN polarity, single configuration, and compact package design, the DSS4160V-7 offers exceptional performance and efficiency. Experience the value and benefits this transistor brings to your projects, from increased power dissipation to high collector current capabilities. Trust Diodes Incorporated to deliver cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor durable and resistant to environmental factors, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic systems.

Surface Mount: YES

Being surface mountable makes it convenient for automated assembly processes, saving time and cost during production.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on PCBs, optimizing space utilization in electronic designs.

Terminal Form: FLAT

The flat terminal form ensures secure and stable connections, reducing the risk of electrical failures.

Maximum Power Dissipation: 0.6 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 100

The high DC current gain ensures reliable amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance makes this transistor suitable for use in demanding environments.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating allows for use in circuits with higher voltage requirements.

Maximum Collector Current (IC): 1 A

The high collector current rating enables this transistor to handle high current levels, making it versatile in different applications.

Nominal Transition Frequency (fT): 150 MHz

The high transition frequency indicates good high-frequency performance, ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4160V-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4160V-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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