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DSS4240V-7

Diodes Incorporated

DSS4240V-7 by Diodes Incorporated

DSS4240V-7 by Diodes Inc. is a NPN BJT with 40V VCE, 2A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its high DC current gain of 75 (hFE) and compact SMALL OUTLINE package. With a max operating temp of 150°C, it's suitable for various surface mount designs requiring low power dissipation (0.6W).

Median Price

$0.350

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 168,444 parts In-Stock

1+ parts

$0.350

100+ parts

$0.135

1k+ parts

$0.089

10k+ parts

$0.063

168,444

$0.350

$0.135

$0.089

$0.063

Mouser Electronics

USA . 1,975 parts In-Stock

1+ parts

$0.350

100+ parts

$0.135

1k+ parts

$0.089

10k+ parts

$0.056

1,975

$0.350

$0.135

$0.089

$0.056

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.046

30,000

-

-

-

$0.046

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 103,901 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

103,901

$0.039

-

-

-

Component Stockers USA

USA . 438,287 parts In-Stock

1+ parts

$0.400

100+ parts

$0.110

1k+ parts

$0.080

10k+ parts

$0.050

438,287

$0.400

$0.110

$0.080

$0.050

Native Components

USA . 766 parts In-Stock

1+ parts

$12.300

100+ parts

-

1k+ parts

-

10k+ parts

-

766

$12.300

-

-

-

Northwest PG Solutions

USA . 1,918 parts In-Stock

1+ parts

$13.530

100+ parts

$12.177

1k+ parts

-

10k+ parts

-

1,918

$13.530

$12.177

-

-

Authorized Procurement Solutions

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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90,000

-

-

-

-

Kepictronics

USA . 21,824 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,824

-

-

-

-

Perfect Parts

USA . 15,530 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

-

15,530

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

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-

-

Overview

Unleash the power of innovation with the DSS4240V-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Bipolar Junction Transistors that are versatile and reliable. Perfect for a wide range of applications, this NPN transistor offers exceptional performance and durability. Upgrade your electronics with the DSS4240V-7 and experience the value and benefits it brings to your projects. Trust Diodes Incorporated for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor durable and resistant to external damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design.

No. of Terminals: 6

Having 6 terminals offers flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.6 W

The high power dissipation capability ensures the transistor can handle a range of applications without overheating.

Minimum DC Current Gain (hFE): 75

A minimum DC current gain of 75 ensures stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating provides protection against voltage spikes and ensures reliable performance.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its efficiency and reliability in electronic devices.

Maximum Collector Current (IC): 2 A

A maximum collector current of 2 A allows the transistor to handle higher current loads in circuits.

Terminal Finish: MATTE TIN

The matte tin finish offers good solderability and corrosion resistance for long-lasting connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connections.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures the safety and reliability of the transistor during soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature can withstand the soldering process without damage to the transistor.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency makes this transistor suitable for high-frequency applications such as radio frequency amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4240V-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4240V-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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