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DSS4320T-7

Diodes Incorporated

DSS4320T-7 by Diodes Incorporated

DSS4320T-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, capable of handling up to 2A collector current and operating at a max temp of 150°C. With a transition frequency of 100MHz, it's ideal for switching applications in small outline packages.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,890 parts In-Stock

1+ parts

$0.370

100+ parts

$0.143

1k+ parts

$0.093

10k+ parts

$0.059

7,890

$0.370

$0.143

$0.093

$0.059

DigiKey

USA . 3,537 parts In-Stock

1+ parts

$0.370

100+ parts

$0.143

1k+ parts

$0.094

10k+ parts

$0.068

3,537

$0.370

$0.143

$0.094

$0.068

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.036

3,000

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-

-

$0.036

Avnet

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Arrow

USA . 1,550 parts In-Stock

1+ parts

-

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$0.046

1,550

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$0.046

Verical

USA . 1,550 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

$0.046

1,550

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-

$0.046

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.074

6,000

-

-

-

$0.074

IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.050

6,000

-

-

-

$0.050

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 804 parts In-Stock

1+ parts

$0.354

100+ parts

-

1k+ parts

-

10k+ parts

$0.340

804

$0.354

-

-

$0.340

Northwest PG Solutions

USA . 314 parts In-Stock

1+ parts

$0.389

100+ parts

-

1k+ parts

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10k+ parts

$0.343

314

$0.389

-

-

$0.343

Perfect Parts

USA . 63,095 parts In-Stock

1+ parts

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63,095

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Lixinc

USA . 9,130 parts In-Stock

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9,130

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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3,000

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iodParts Technologies Inc.

India . 2,750 parts In-Stock

1+ parts

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2,750

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Overview

Enhance your electronics projects with the DSS4320T-7 by Diodes Incorporated. Known for their top-quality components, Diodes Incorporated delivers reliable and efficient small signal Bipolar Junction Transistors (BJTs) like the DSS4320T-7. Perfect for switching applications, this NPN transistor offers a maximum power dissipation of 0.6W and a maximum collector current of 2A. With a minimum DC current gain of 150, this transistor provides excellent performance in a compact package. Trust Diodes Incorporated to provide the highest quality components for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

The surface mount capability makes it easy to integrate this transistor into compact electronic designs.

Maximum Power Dissipation (Abs): 0.6 W

With a high power dissipation capacity, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 150

The high DC current gain allows for efficient signal amplification in various circuits.

Maximum Collector-Emitter Voltage: 20 V

This voltage rating ensures the safe operation of the transistor within specified limits.

Maximum Collector Current (IC): 2 A

Capable of handling high collector currents, making it suitable for applications requiring higher power levels.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the transistor can withstand high-temperature soldering processes without damage.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4320T-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4320T-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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