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DSS4160T-7

Diodes Incorporated

DSS4160T-7 by Diodes Incorporated

DSS4160T-7 by Diodes Inc. is a NPN BJT with 60V VCEO, 1A IC, and 150MHz fT. Ideal for small outline applications, it has a max power dissipation of 0.725W and operates up to 150°C. Suitable for automotive use due to AEC-Q101 compliance.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.048

3,000

-

-

-

$0.048

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.048

10k+ parts

-

3,000

-

-

$0.048

-

Farnell

UK . 2,505 parts In-Stock

1+ parts

-

100+ parts

$0.148

1k+ parts

$0.098

10k+ parts

$0.083

2,505

-

$0.148

$0.098

$0.083

Element14

Singapore . 2,505 parts In-Stock

1+ parts

-

100+ parts

$0.254

1k+ parts

$0.143

10k+ parts

$0.141

2,505

-

$0.254

$0.143

$0.141

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

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$0.167

84,000

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-

$0.167

IBS Electronics

USA . 60,000 parts In-Stock

1+ parts

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$0.126

60,000

-

-

-

$0.126

Chip Stock

USA . 52,000 parts In-Stock

1+ parts

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52,000

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Bristol Electronics

USA . 946 parts In-Stock

1+ parts

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946

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

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700

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Distributors (Availability)

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Ampacity Inc.

Singapore . 46,519 parts In-Stock

1+ parts

$0.056

100+ parts

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10k+ parts

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46,519

$0.056

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Continental Prestige Electronics

USA . 2,700 parts In-Stock

1+ parts

$0.408

100+ parts

$0.167

1k+ parts

$0.088

10k+ parts

$0.062

2,700

$0.408

$0.167

$0.088

$0.062

Corohmni

South Africa . 237 parts In-Stock

1+ parts

$1.327

100+ parts

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237

$1.327

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$1.941

100+ parts

$1.766

1k+ parts

$1.592

10k+ parts

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70

$1.941

$1.766

$1.592

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Perfect Parts

USA . 36,178 parts In-Stock

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36,178

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Eastek

USA . 30,000 parts In-Stock

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100+ parts

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$0.090

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30,000

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$0.090

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Lixinc

USA . 9,581 parts In-Stock

1+ parts

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9,581

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Argo Parts USA

USA . 3,646 parts In-Stock

1+ parts

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3,646

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Discover the exceptional performance and reliability of the DSS4160T-7 by Diodes Incorporated, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers versatility and efficiency, making it perfect for a variety of applications. With its high-quality construction and advanced features, this product provides customers with unmatched value and benefits. Experience seamless operation and superior functionality with the DSS4160T-7 - the ultimate choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows the transistor to amplify and switch electronic signals with ease.

Configuration: SINGLE

Simplifies circuit design and integration.

Surface Mount: YES

Facilitates easy assembly onto circuit boards, saving time and effort.

Maximum Power Dissipation (Abs): 0.725 W

Can handle high power dissipation, making it suitable for a variety of applications.

Package Style (Meter): SMALL OUTLINE

Saves space on the circuit board, particularly useful in compact designs.

Minimum DC Current Gain (hFE): 100

Ensures reliable amplification of signals with consistent performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments without overheating.

Maximum Collector-Emitter Voltage: 60 V

Can handle relatively high voltage levels, increasing its versatility.

Transistor Element Material: SILICON

Provides stability and reliability in performance, commonly used in semiconductor devices.

Maximum Collector Current (IC): 1 A

Capable of handling high collector current, suitable for applications requiring higher current flow.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and solderability for secure connections.

Nominal Transition Frequency (fT): 150 MHz

Indicates the speed at which the transistor can switch, essential for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4160T-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4160T-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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