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DSS4160DS-7

Diodes Incorporated

DSS4160DS-7 by Diodes Incorporated

DSS4160DS-7 by Diodes Inc. is a NPN BJT with 2 elements, hFE of 100, VCE of 60V, and IC of 1A. It's a small outline transistor for applications requiring high transition frequency up to 220MHz in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.416

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,760 parts In-Stock

1+ parts

$0.620

100+ parts

$0.243

1k+ parts

$0.164

10k+ parts

$0.122

5,760

$0.620

$0.243

$0.164

$0.122

Mouser Electronics

USA . 4,379 parts In-Stock

1+ parts

$0.620

100+ parts

$0.243

1k+ parts

$0.163

10k+ parts

$0.117

4,379

$0.620

$0.243

$0.163

$0.117

Newark

USA . 2,045 parts In-Stock

1+ parts

$0.670

100+ parts

$0.265

1k+ parts

$0.179

10k+ parts

-

2,045

$0.670

$0.265

$0.179

-

Verical

USA . 303,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.102

303,000

-

-

-

$0.102

Farnell

UK . 2,980 parts In-Stock

1+ parts

-

100+ parts

$0.202

1k+ parts

$0.145

10k+ parts

$0.116

2,980

-

$0.202

$0.145

$0.116

Element14

Singapore . 2,980 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.148

10k+ parts

$0.134

2,980

-

$0.211

$0.148

$0.134

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 285 parts In-Stock

1+ parts

$0.311

100+ parts

-

1k+ parts

-

10k+ parts

-

285

$0.311

-

-

-

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.363

100+ parts

$0.330

1k+ parts

$0.298

10k+ parts

-

450

$0.363

$0.330

$0.298

-

Authorized Procurement Solutions

USA . 250,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

250,000

-

-

-

-

Perfect Parts

USA . 16,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,800

-

-

-

-

Eastek

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Futuretech Components

Singapore . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Continental Prestige Electronics

USA . 2,980 parts In-Stock

1+ parts

-

100+ parts

$0.224

1k+ parts

$0.126

10k+ parts

$0.099

2,980

-

$0.224

$0.126

$0.099

Northwest PG Solutions

USA . 926 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

926

-

-

-

-

Native Components

USA . 813 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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813

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the DSS4160DS-7 by Diodes Incorporated. This high-quality Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability for a wide range of applications. With Diodes Incorporated's reputation for excellence, customers can trust that they are getting a top-notch product that delivers exceptional value and benefits. Whether you're looking to amplify signals or control currents, the DSS4160DS-7 is the perfect solution for your needs. Upgrade your electronics with this innovative component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for signal processing applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and can improve performance in certain configurations.

Surface Mount: YES

Surface mount capability makes this transistor easy to integrate into PCB designs, saving space and allowing for automated assembly.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistent and reliable transistor operation in various circuit conditions.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage, this transistor can handle relatively high voltage levels, expanding its potential uses.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A allows this transistor to handle moderate power levels, suitable for many small signal applications.

Nominal Transition Frequency (fT): 220 MHz

Having a high transition frequency of 220 MHz enables this transistor to operate effectively in high-frequency signal processing circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4160DS-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4160DS-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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