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DSS4160FDB-7

Diodes Incorporated

DSS4160FDB-7 by Diodes Incorporated

DSS4160FDB-7 by Diodes Inc. is a NPN BJT transistor with 2 elements, suitable for switching applications. Features include hFE of 70, Vce(max) of 60V, and IC(max) of 1A. Its small outline package makes it ideal for surface mount designs requiring high-speed operation up to 175MHz.

Median Price

$0.546

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 90 parts In-Stock

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$0.920

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$0.389

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90

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Verical

USA . 3,000 parts In-Stock

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$0.172

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$0.172

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Chip Stock

USA . 47,000 parts In-Stock

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SPM Sales

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Nova Conductors

Japan . 83 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,939 parts In-Stock

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$0.146

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2,939

$0.146

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$0.942

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$0.857

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$0.772

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10

$0.942

$0.857

$0.772

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Corohmni

South Africa . 273 parts In-Stock

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$1.139

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273

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Lixinc

USA . 9,956 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Overview

Discover the power of the DSS4160FDB-7 by Diodes Incorporated, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a maximum collector-emitter voltage of 60V and a compact square package shape, this NPN transistor offers reliability and efficiency in a variety of electronic projects. Trust in Diodes Incorporated's reputation for excellence and choose the DSS4160FDB-7 for your next design, providing value and performance that exceeds expectations. Elevate your circuits with this advanced technology and experience seamless operation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and low noise operation.

Configuration: SEPARATE, 2 ELEMENTS

Separate elements allow for independent control of each section, providing versatility in circuit design and functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, allowing for fast response times and efficient operation in electronic circuits.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and simplifying manufacturing processes.

Package Shape: SQUARE

Square shape provides more stable mounting and better heat dissipation, enhancing overall performance and reliability.

No. of Elements: 2

Having 2 elements allows for more complex circuit configurations and greater functionality in electronic devices.

No. of Terminals: 6

More terminals provide flexibility in circuit connections and enable more advanced electronic designs.

Minimum DC Current Gain (hFE): 70

High DC current gain ensures efficient amplification and switching capabilities, leading to improved performance in circuits.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring moderate voltage handling capabilities, ensuring reliable operation in various electronic systems.

Transistor Element Material: SILICON

Silicon is a widely-used and reliable material for transistors, offering good performance and durability in electronic devices.

Maximum Collector Current (IC): 1 A

Capable of handling high currents, making it suitable for a wide range of electronic applications that require robust performance.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance, ensuring stable connections and long-term reliability in circuits.

Terminal Position: DUAL

Dual positions offer flexibility in circuit layout and connections, allowing for customized designs and efficient circuitry.

Case Connection: COLLECTOR

Collector connection offers high thermal conductivity and improved heat dissipation, enhancing overall performance and reliability.

Peak Reflow Temperature °C: 260

Capable of withstanding high temperatures during assembly processes, ensuring reliable solder joints and stable performance.

Nominal Transition Frequency (fT): 175 MHz

High transition frequency enables fast switching speeds and efficient signal processing, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4160FDB-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4160FDB-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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