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DSS4160U-7

Diodes Incorporated

DSS4160U-7 by Diodes Incorporated

DSS4160U-7 by Diodes Inc. is a NPN BJT with max. collector-emitter voltage of 60V, max. collector current of 1A, and min. DC current gain of 100 hFE. It is used in applications requiring small signal amplification in compact electronic circuits due to its high transition frequency of 150MHz and surface mount capability for space-saving designs.

Median Price

$0.390

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,355 parts In-Stock

1+ parts

$0.390

100+ parts

$0.152

1k+ parts

$0.100

10k+ parts

$0.083

11,355

$0.390

$0.152

$0.100

$0.083

DigiKey

USA . 3,546 parts In-Stock

1+ parts

$0.390

100+ parts

$0.152

1k+ parts

$0.100

10k+ parts

-

3,546

$0.390

$0.152

$0.100

-

Verical

USA . 270,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.050

270,000

-

-

-

$0.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

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100

$0.098

-

-

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Vyrian

USA . 141,587 parts In-Stock

1+ parts

-

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141,587

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-

-

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Martec Srl

Italy . 11,942 parts In-Stock

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11,942

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NAC Semi

USA . 6,000 parts In-Stock

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6,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 141,597 parts In-Stock

1+ parts

$0.043

100+ parts

$0.042

1k+ parts

$0.042

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-

141,597

$0.043

$0.042

$0.042

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Ampacity Inc.

Singapore . 141,303 parts In-Stock

1+ parts

$0.043

100+ parts

-

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141,303

$0.043

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Continental Prestige Electronics

USA . 2,087 parts In-Stock

1+ parts

$0.098

100+ parts

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1k+ parts

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10k+ parts

$0.096

2,087

$0.098

-

-

$0.096

Argo Parts USA

USA . 29 parts In-Stock

1+ parts

$0.098

100+ parts

-

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$0.095

29

$0.098

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-

$0.095

Aztec Data Supply Inc.

USA . 5,651 parts In-Stock

1+ parts

$0.790

100+ parts

-

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5,651

$0.790

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Corohmni

South Africa . 1,074 parts In-Stock

1+ parts

$0.919

100+ parts

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1,074

$0.919

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Perfect Parts

USA . 12,307 parts In-Stock

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12,307

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Robosynatics

Brazil . 5,906 parts In-Stock

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5,906

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Lucentia Tech

USA . 5,906 parts In-Stock

1+ parts

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100+ parts

$1.019

1k+ parts

$0.998

10k+ parts

$0.998

5,906

-

$1.019

$0.998

$0.998

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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1k+ parts

$0.060

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3,000

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$0.060

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.096

1k+ parts

$0.093

10k+ parts

$0.091

50

-

$0.096

$0.093

$0.091

Overview

Unlock the power of innovation with the DSS4160U-7 from Diodes Incorporated. As a leader in semiconductor technology, Diodes Incorporated delivers top-quality products that meet the demands of today's fast-paced world. The DSS4160U-7 is a small signal bipolar junction transistor perfect for a wide range of applications. With its high DC current gain and maximum collector-emitter voltage of 60V, this NPN transistor offers exceptional performance and reliability. Experience the value and benefits of the DSS4160U-7 for yourself and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Simplified circuit design and easy to use in single transistor circuits.

Surface Mount: YES

Efficient assembly onto circuit boards, saving space and reducing overall product size.

Maximum Power Dissipation (Abs): 0.4 W

Suitable for low to medium power applications, making it energy efficient.

Package Shape: RECTANGULAR

Easy to handle and integrate into different circuit designs.

Minimum DC Current Gain (hFE): 100

Ensures consistent and stable amplification of signals through the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ideal for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 60 V

Suitable for a wide range of voltage requirements in different circuit designs.

Transistor Element Material: SILICON

Silicon transistors have high performance and reliability, making this product a durable choice.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels, suitable for many circuit applications.

Terminal Finish: MATTE TIN

Enhances solderability and conductivity, ensuring secure connections in the circuit.

Nominal Transition Frequency (fT): 150 MHz

High frequency response for applications requiring fast switching speeds or high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4160U-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4160U-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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