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DSS4540X-13

Diodes Incorporated

DSS4540X-13 by Diodes Incorporated

DSS4540X-13 by Diodes Inc. is a NPN BJT transistor with 40V VCEO, 4A IC, and 2W Ptot. Ideal for switching applications in small outline packages, it offers a transition frequency of 70MHz and operates up to 150°C.

Median Price

$0.426

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,274 parts In-Stock

1+ parts

$0.700

100+ parts

$0.254

1k+ parts

$0.179

10k+ parts

$0.150

5,274

$0.700

$0.254

$0.179

$0.150

DigiKey

USA . 7,137 parts In-Stock

1+ parts

$0.710

100+ parts

$0.284

1k+ parts

$0.194

10k+ parts

$0.148

7,137

$0.710

$0.284

$0.194

$0.148

Arrow

USA . 72,117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.129

10k+ parts

$0.087

72,117

-

-

$0.129

$0.087

Verical

USA . 72,117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.151

10k+ parts

-

72,117

-

-

$0.151

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 132,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.267

132,500

-

-

-

$0.267

IBS Electronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.223

30,000

-

-

-

$0.223

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 98,960 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

98,960

$0.076

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.516

100+ parts

$0.511

1k+ parts

$0.490

10k+ parts

-

50

$0.516

$0.511

$0.490

-

Corohmni

South Africa . 972 parts In-Stock

1+ parts

$1.461

100+ parts

-

1k+ parts

-

10k+ parts

-

972

$1.461

-

-

-

Kepictronics

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,000

-

-

-

-

Continental Prestige Electronics

USA . 3,845 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,845

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.150

10k+ parts

-

2,500

-

-

$0.150

-

Argo Parts USA

USA . 2,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,010

-

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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500

-

-

-

-

Overview

Elevate your electronics with the DSS4540X-13 by Diodes Incorporated, a top-tier manufacturer known for their superior quality and reliable products. This small signal bipolar junction transistor (BJT) is perfect for switching applications, offering customers exceptional value and performance. With a maximum collector-emitter voltage of 40V and a maximum collector current of 4A, this NPN transistor delivers power and efficiency in a compact, surface-mount package. Upgrade your designs with the DSS4540X-13 and experience the difference Diodes Incorporated can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation for safe operation and handling.

Polarity or Channel Type: NPN

Commonly used type in various applications, ensuring compatibility.

Configuration: SINGLE

Simplified design for easy implementation.

Transistor Application: SWITCHING

Suitable for switching applications, offering efficient performance.

Surface Mount: YES

Can be easily mounted on circuit boards, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

Standard shape for easy integration into electronic devices.

Terminal Form: FLAT

Ensures secure and stable connection.

Maximum Power Dissipation (Abs): 2 W

Able to handle moderate power levels for reliable operation.

Minimum DC Current Gain (hFE): 100

Ensures consistent amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Common material for transistor construction, providing reliability and performance.

Maximum Collector Current (IC): 4 A

Capable of handling higher current levels for various applications.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for improved longevity.

Terminal Position: SINGLE

Simplifies circuit design and connection.

Case Connection: COLLECTOR

Clear indication of terminal connections for proper installation.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

Adheres to standard reflow soldering temperatures for reliable joints.

Nominal Transition Frequency (fT): 70 MHz

Suitable for high-frequency applications for versatile use.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DSS4540X-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DSS4540X-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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