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20 W Small Signal Bipolar Junction Transistors (BJT) 16

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SB1216S-E by Onsemi

2SB1216S-E

Onsemi

The Onsemi 2SB1216S-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. Packaged in plastic/epoxy, it has through-hole terminals and a power dissipation of 20W in an inline style package.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

2SB1216S-H by Onsemi

2SB1216S-H

Onsemi

The Onsemi 2SB1216S-H is a PNP BJT transistor with max. power dissipation of 20W, hFE of 140, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 130MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

2SB1216T-E by Onsemi

2SB1216T-E

Onsemi

The Onsemi 2SB1216T-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150 °C operating temperature. Its package style is in-line, making it suitable for through-hole mounting in various electronic circuits.

COLLECTOR

4 A

100 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

2SB1216T-TL-E by Onsemi

2SB1216T-TL-E

Onsemi

2SB1216T-TL-E by Onsemi is a PNP BJT transistor with 100V VCEO, 4A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 20W in a small outline package. With Gull Wing terminals and TIN BISMUTH finish, it operates up to 150 °C.

COLLECTOR

4 A

100 V

SINGLE

200

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

130 MHz

2SD1816S-E by Onsemi

2SD1816S-E

Onsemi

The Onsemi 2SD1816S-E is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. The package style is in-line with through-hole terminals, making it suitable for high-power dissipation up to 20W in various electronic circuits.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816S-H by Onsemi

2SD1816S-H

Onsemi

Onsemi's 2SD1816S-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. current of 4A. It has a min. DC current gain of 140, making it suitable for switching applications up to 20W power dissipation at 150°C. The through-hole package style with tin bismuth finish is ideal for various electronic designs requiring high-speed performance at a nominal transition frequency of 180MHz.

COLLECTOR

4 A

100 V

SINGLE

140

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816S-TL-H by Onsemi

2SD1816S-TL-H

Onsemi

Onsemi's 2SD1816S-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. This small outline package has a transition frequency of 180MHz, making it suitable for high-speed switching circuits.

COLLECTOR

4 A

100 V

SINGLE

140

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

180 MHz

2SD1816T-E by Onsemi

2SD1816T-E

Onsemi

2SD1816T-E by Onsemi is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its single configuration and high transition frequency of 180MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.

COLLECTOR

4 A

100 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816T-H by Onsemi

2SD1816T-H

Onsemi

Onsemi's 2SD1816T-H is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 180MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.

COLLECTOR

4 A

100 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

2SD1816T-TL-H by Onsemi

2SD1816T-TL-H

Onsemi

Onsemi's 2SD1816T-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature. Its small outline package and high transition frequency of 180MHz make it suitable for compact electronic designs requiring fast signal processing.

COLLECTOR

4 A

100 V

SINGLE

200

TO-252

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

GULL WING

SINGLE

30

SWITCHING

SILICON

180 MHz

2SD1815S-H by Onsemi

2SD1815S-H

Onsemi

The Onsemi 2SD1815S-H is a NPN BJT with max power dissipation of 20W, hFE of 140, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and high operating temperature of 150 °C.

3 A

SINGLE

140

e6

1

150 Cel

NPN

20 W

Other Transistors

NO

TIN BISMUTH

2SD1815S-TL-H by Onsemi

2SD1815S-TL-H

Onsemi

2SD1815S-TL-H by Onsemi is a NPN BJT with 20W power dissipation, 140 min hFE, and 150 °C max operating temp. Ideal for applications requiring a single configuration, surface mount capability, and up to 3A collector current.

3 A

SINGLE

140

e6

1

1

150 Cel

260

NPN

20 W

Other Transistors

YES

TIN BISMUTH

30

2SD1815T-H by Onsemi

2SD1815T-H

Onsemi

The Onsemi 2SD1815T-H is a NPN BJT with max power dissipation of 20W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and operating temp up to 150 °C.

3 A

SINGLE

200

e6

1

150 Cel

NPN

20 W

Other Transistors

NO

TIN BISMUTH

2SD1815T-TL-H by Onsemi

2SD1815T-TL-H

Onsemi

The Onsemi 2SD1815T-TL-H is a NPN BJT with max power dissipation of 20W, hFE of 200, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability. Operating temp up to 150 °C makes it suitable for various electronic devices.

3 A

SINGLE

200

e6

1

1

150 Cel

260

NPN

20 W

Other Transistors

YES

TIN BISMUTH

30

2SB1203T-E by Onsemi

2SB1203T-E

Onsemi

Onsemi's 2SB1203T-E is a PNP BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 5A. Ideal for switching applications due to its single configuration and high transition frequency of 130MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.

COLLECTOR

5 A

50 V

SINGLE

200

TO-251

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

2SC3303-Y(T6L1,NQ) by Toshiba

2SC3303-Y(T6L1,NQ)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

80 V

SINGLE

120

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

GULL WING

SINGLE

SWITCHING

SILICON

120 MHz

.4 V