Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BCR101T-E6327
Infineon Technologies
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 70; Transistor Element Material: SILICON;
.05 A
70
1
NPN
.25 W
BIP General Purpose Small Signal
YES
SILICON
BCR151T-E6327
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON; No. of Elements: 1;
PNP
RN1101CT(TPL3)
Toshiba
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .05 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Transistor Element Material: SILICON;
30
.05 W
DDA114EUQ-7-F
Diodes Incorporated
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
e3
2
260
.2 W
MATTE TIN
DDTA114ECAQ-13-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
50 V
SINGLE WITH BUILT-IN RESISTOR
R-PDSO-G3
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
AEC-Q101
GULL WING
DUAL
250 MHz
DDTA114ECAQ-7-F
NSVMMBT5088LT3G
Onsemi
NSVMMBT5088LT3G by Onsemi is a NPN BJT with hFE of 300, VCE of 30V, and fT of 50MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and IC of 0.05A.
30 V
SINGLE
300
TO-236AB
50 MHz
IMD3AT108
ROHM
ROHM's IMD3AT108 is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor for switching applications. With max VCEsat of 0.3V, it operates up to 150°C, has fT of 250MHz, and can handle IC of 0.05A in a small outline package suitable for surface mount technology.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G6
e1
6
150 Cel
NPN AND PNP
.3 W
Not Qualified
TIN SILVER COPPER
10
SWITCHING
.3 V
2SC4098T106P
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
2.2 pF
25 V
82
Other Transistors
AMPLIFIER
300 MHz
2SA1579T106R
ROHM's 2SA1579T106R is a PNP small signal BJT transistor with a max VCEsat of 0.5V and a min DC current gain (hFE) of 180. It is commonly used as an amplifier in various applications.
120 V
180
140 MHz
.5 V
KSA992PBU
Fairchild Semiconductor
Fairchild Semiconductor's KSA992PBU is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 200 and can handle a max collector current of 0.05A. With a max power dissipation of 0.5W and operating temperature up to 150°C, it is suitable for various electronic circuits requiring high gain and low power consumption.
LOW NOISE
200
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
.5 W
NO
THROUGH-HOLE
BOTTOM
100 MHz
KSA992PTA
Fairchild Semiconductor's KSA992PTA is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. With a max power dissipation of 0.5W and max collector-emitter voltage of 120V, it operates at up to 150°C. Featuring a min hFE of 200 and fT of 100MHz, this transistor is housed in a cylindrical package suitable for through-hole mounting.
BF420,112
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .05 A;
1.6 pF
300 V
50
.8 W
60 MHz
.6 V
BF420,116
BF421,112
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .05 A;
BF422,116
250 V
BF423,112
BF423,116
2SA1038STPR
ROHM 2SA1038STPR is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 180, suitable for amplifier applications due to its high transition frequency of 140MHz and power dissipation of 0.3W.
R-PSIP-T3
IN-LINE
2SA1038STPS
ROHM 2SA1038STPS is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 270, suitable for amplifier applications with a nominal transition frequency of 140MHz.
270
KSC1845FBU
KSC1845FBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 300, ideal for amplifier applications. It has a max power dissipation of 0.5W and can operate at temperatures up to 150°C. The package style is cylindrical with matte tin terminal finish and through-hole terminal form.
110 MHz
DDTC124XUA-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BUILT-IN BIAS RESISTANCE RATIO IS 2.14
68
e0
TIN LEAD
DDTC114ECA-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
BUILT-IN BIAS RESISTOR RATIO IS 1
DDTC124XCA-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: R-PDSO-G3;
DDTC114EE-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
DCX114EU-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 30;
DDC114EU-7
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Additional Features: BUILT-IN BIAS RESISTANCE RATIO IS 1;
BUILT-IN BIAS RESISTANCE RATIO IS 1
DDTA114ECA-7
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
BUILT IN BIAS RESISTANCE RATIO IS 1
DCX114EH-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
BUILT-IN BIAS RESISTOR RATIO 1
R-PDSO-F6
.15 W
FLAT
IMT4-7-F
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: R-PDSO-G6;
SEPARATE, 2 ELEMENTS
IMX8-7-F
Diodes Inc.'s IMX8-7-F is a NPN BJT with 2 elements, hFE of 180, and VCE of 120V. Ideal for small signal applications, it has a max power dissipation of 0.3W and transition frequency of 140MHz. With Gull Wing terminals and matte tin finish, it operates up to 150°C in a small outline package.
DDTA114EKA-7-F
DDTA114EKA-7-F by Diodes Incorporated is a PNP small signal bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.05A. It is commonly used in applications such as amplifiers, switches, and audio circuits.
BUILT IN BIAS RESISTOR RATIO IS 1
DDTA124XKA-7-F
BUILT-IN BIAS RESISTOR RATIO IS 2.13
DDTC124XUA-7-F
BUILT-IN BIAS RESISTOR RATIO 2.14
DCX114EK-7-F
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
DDTC114EKA-7-F
DDTC124XE-7-F
DDTC124XE-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. It features a max collector-emitter voltage of 50V, max collector current of 0.05A, and transition frequency of 250MHz. This surface mount transistor in plastic/epoxy package is suitable for low-power electronic circuits.
BUILT-IN BIAS RESISTOR RATIO IS 2.14
DDTC124XKA-7-F
2N5087G
2N5087G by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 250, and max. collector-emitter voltage of 50V. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. operating temp. of 150°C in a cylindrical package style.
250
1.5 W
40 MHz
2N5089G
2N5089G by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.05A in a cylindrical package style.
450
2N5089RLRAG
2N5089RLRAG by Onsemi is a NPN BJT transistor with hFE of 400, VCE of 25V, and IC of 0.05A. Ideal for amplifier applications due to its high transition frequency of 50MHz and max power dissipation of 0.35W in a cylindrical package.
400
.35 W
MPSA43ZL1G
MPSA43ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 200V, ideal for low-power applications. Featuring a min. DC current gain of 40 and max. operating temp of 150°C, it's suitable for small signal amplification in various electronic circuits. With a peak reflow temp of 260°C and nominal transition frequency of 50MHz, this transistor offers reliable performance in through-hole configurations.
EUROPEAN PART NUMBER
200 V
40
.625 W
BF422G
BF422G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.8W, hFE of 50, and operates at up to 150 °C. With a max VCE of 250V and fT of 60MHz, it's suitable for various electronic circuits requiring high voltage amplification.
Tin/Silver/Copper (Sn/Ag/Cu)
BF421ZL1G
BF421ZL1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.83W, hFE of 50, and can handle up to 300V collector-emitter voltage. With a transition frequency of 60MHz and operating temperature up to 150 °C, it's suitable for various electronic circuits requiring high-speed switching capabilities.
.83 W
BF422ZL1G
BF422ZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for amplifier applications. It has a min. DC current gain of 50 and max. power dissipation of 0.83W in a cylindrical package style, suitable for through-hole mounting at up to 150 °C operating temperature.
BF423ZL1G
BF423ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.83W, hFE of 50, and VCE of 250V. Ideal for amplifier applications due to its high transition frequency of 60MHz and max. collector current of 0.05A in a cylindrical package style.
MPS4250G
MPS4250G by Onsemi is a PNP BJT transistor with hFE of 250, VCE of 40V, and IC of 0.05A. It is used in applications requiring small signal amplification in electronic circuits due to its high gain and low collector current capabilities.
40 V
TO-226
MPSA43G
MPSA43G by Onsemi is a NPN BJT with 200V VCEO, 50MHz fT, and 1.5W Ptot. Ideal for low-power applications, it features hFE of 40 and operates up to 150°C. Commonly used in signal amplification due to its small signal capabilities in through-hole package.
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