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DDTA114EKA-7-F

Diodes Incorporated

DDTA114EKA-7-F by Diodes Incorporated

DDTA114EKA-7-F by Diodes Incorporated is a PNP small signal bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.05A. It is commonly used in applications such as amplifiers, switches, and audio circuits.

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1k+

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Vyrian

USA . 3,278 parts In-Stock

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Nova Conductors

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200

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Ampacity Inc.

Singapore . 1,292 parts In-Stock

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$6.050

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AZTECH Wire

Italy . 733 parts In-Stock

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Component Stockers USA

USA . 443 parts In-Stock

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$99.990

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Lixinc

USA . 15,421 parts In-Stock

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Continental Prestige Electronics

USA . 6,720 parts In-Stock

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Argo Parts USA

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Aranea Global

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Perfect Parts

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Overview

Discover the power of the DDTA114EKA-7-F by Diodes Incorporated, a cutting-edge Small Signal Bipolar Junction Transistor (BJT) that guarantees top-notch quality and performance. With its PNP polarity and single configuration, this state-of-the-art transistor offers built-in resistors for added convenience. Its surface mount capability and three-terminal form make it versatile and easy to use in various applications. Experience the benefits of its small outline package style and matte tin terminal finish, providing durability and reliability. Whether you're designing audio amplifiers or control circuits, the DDTA114EKA-7-F delivers exceptional value and unmatched advantages, making it the go-to choice for professionals and enthusiasts alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and compatibility with other components.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for compact applications.

Surface Mount: YES

The surface mount capability enables easy PCB assembly and efficient utilization of space in electronic designs.

Package Shape: RECTANGULAR

The rectangular shape allows for easier mounting and placement of the transistor in different circuit layouts.

Terminal Form: GULL WING

The gull wing form facilitates secure soldering and ensures reliable electrical connections in PCB assemblies.

No. of Terminals: 3

The three terminals provide the necessary connections for efficient signal amplification and control.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels while maintaining stability and reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving integration into compact electronic devices without compromising performance.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain of 30 ensures efficient signal amplification and reliable transistor performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand demanding environmental conditions and operate reliably under various heatsinks.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50 V allows for use in applications requiring high voltage switching or amplification.

Transistor Element Material: SILICON

The use of silicon as the transistor element material enables reliable and consistent performance across a range of operating conditions.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 A, this transistor can handle moderate current loads while maintaining stability and efficiency.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures secure soldering and enhances the transistor's overall reliability in various operating environments.

Terminal Position: DUAL

The dual terminal position provides flexibility in PCB layout and allows for easy connectivity with other components.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand the peak reflow temperature for up to 30 seconds during the soldering process, ensuring proper component mounting and solder joint integrity.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for effective soldering and ensures robust performance in high-temperature environments.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250 MHz, this transistor excels at high-frequency applications requiring fast switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTA114EKA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTA114EKA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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