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DDTA114YCA-7-F

Diodes Incorporated

DDTA114YCA-7-F by Diodes Incorporated

DDTA114YCA-7-F by Diodes Inc. is a PNP BJT with built-in resistor, featuring 50V max collector-emitter voltage, 0.07A max collector current, and 250MHz transition frequency. Ideal for small signal applications in electronics due to its compact size and high operating temperature range of -55°C to 150°C.

Median Price

$0.025

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,517 parts In-Stock

1+ parts

$0.320

100+ parts

$0.115

1k+ parts

$0.072

10k+ parts

$0.047

10,517

$0.320

$0.115

$0.072

$0.047

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.025

3,000

-

-

-

$0.025

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.020

3,000

-

-

-

$0.020

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 3,000 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

$0.140

-

-

-

DF Sales Co.

USA . 3,000 parts In-Stock

1+ parts

$0.140

100+ parts

-

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-

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-

3,000

$0.140

-

-

-

NAC Semi

USA . 18,000 parts In-Stock

1+ parts

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18,000

-

-

-

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Schukat

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.027

10k+ parts

$0.017

3,000

-

-

$0.027

$0.017

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 800 parts In-Stock

1+ parts

-

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800

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Semi Source

USA . 307 parts In-Stock

1+ parts

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307

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

-

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,512 parts In-Stock

1+ parts

$0.013

100+ parts

-

1k+ parts

-

10k+ parts

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4,512

$0.013

-

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Continental Prestige Electronics

USA . 6,000 parts In-Stock

1+ parts

$0.213

100+ parts

$0.089

1k+ parts

$0.037

10k+ parts

$0.024

6,000

$0.213

$0.089

$0.037

$0.024

Corohmni

South Africa . 18 parts In-Stock

1+ parts

$0.308

100+ parts

-

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18

$0.308

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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90,000

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Eastek

USA . 24,000 parts In-Stock

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Perfect Parts

USA . 22,599 parts In-Stock

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22,599

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GreenTree Electronics

Israel . 21,000 parts In-Stock

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21,000

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Lixinc

USA . 14,327 parts In-Stock

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14,327

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QUARKTWIN TECHNOLOGY LTD

USA . 7,412 parts In-Stock

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7,412

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Argo Parts USA

USA . 5,005 parts In-Stock

1+ parts

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5,005

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

-

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Allen Electronics Distributors

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.028

10k+ parts

-

1,000

-

-

$0.028

-

Overview

Enhance your electronic projects with the DDTA114YCA-7-F by Diodes Incorporated, a high-quality PNP bipolar junction transistor with a single built-in resistor. Perfect for applications requiring precision and reliability, this small signal BJT offers exceptional performance in a compact package. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 68, this transistor provides optimal power dissipation and temperature capabilities. Trust in Diodes Incorporated's expertise and innovation to bring value and efficiency to your designs with the DDTA114YCA-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Saves space on the circuit board by integrating a resistor, streamlining the design.

Surface Mount: YES

Allows for easy and efficient soldering onto PCBs, facilitating automated manufacturing processes.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 50 V

Handles moderate voltage levels, suitable for various low-power applications.

Transistor Element Material: SILICON

Silicon transistors offer reliable and consistent performance, ensuring stability in circuit operation.

Nominal Transition Frequency (fT): 250 MHz

Offers high frequency response, making it ideal for applications requiring fast switching or amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTA114YCA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTA114YCA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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