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DDTA123YUA-7-F

Diodes Incorporated

DDTA123YUA-7-F by Diodes Incorporated

DDTA123YUA-7-F by Diodes Inc. is a PNP BJT with built-in resistor, hFE of 33, and VCE of 50V. Ideal for small outline applications, it has a power dissipation of 0.2W, operating up to 150°C. With a transition frequency of 250MHz, it's suitable for high-frequency circuits in various electronic devices.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 494 parts In-Stock

1+ parts

$0.230

100+ parts

$0.087

1k+ parts

$0.054

10k+ parts

$0.043

494

$0.230

$0.087

$0.054

$0.043

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.026

60,000

-

-

-

$0.026

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.032

3,000

-

-

-

$0.032

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.050

100+ parts

-

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500

$0.050

-

-

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Vyrian

USA . 7,010 parts In-Stock

1+ parts

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7,010

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Bristol Electronics

USA . 1,159 parts In-Stock

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1,159

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-

Distributors (Availability)

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Ampacity Inc.

Singapore . 6,321 parts In-Stock

1+ parts

$0.020

100+ parts

-

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6,321

$0.020

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Continental Prestige Electronics

USA . 5,667 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

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10k+ parts

$0.049

5,667

$0.050

-

-

$0.049

Argo Parts USA

USA . 2,604 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

2,604

$0.050

-

-

$0.049

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

$0.048

10k+ parts

$0.047

500

$0.050

-

$0.048

$0.047

Perfect Parts

USA . 69,605 parts In-Stock

1+ parts

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69,605

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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QUARKTWIN TECHNOLOGY LTD

USA . 3,099 parts In-Stock

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3,099

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

1+ parts

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3,000

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GreenTree Electronics

Israel . 1,690 parts In-Stock

1+ parts

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1,690

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Lixinc

USA . 255 parts In-Stock

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255

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Overview

Discover the power of the DDTA123YUA-7-F by Diodes Incorporated, a high-quality PNP small signal BJT with a built-in resistor. This versatile component is perfect for a wide range of applications and offers customers exceptional value and performance. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 250 MHz, this transistor ensures reliable operation at temperatures up to 150°C. Trust Diodes Incorporated for top-notch products that deliver unmatched benefits and advantages to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this product versatile and suitable for a wide range of electronic projects.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for compact applications.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto circuit boards, reducing manufacturing time and costs.

Package Shape: RECTANGULAR

The rectangular shape of the package offers compatibility with standard PCB layouts, ensuring easy integration into electronic devices.

Terminal Form: GULL WING

The gull wing terminals provide secure connections and improved heat dissipation, enhancing the overall performance and reliability of the transistor.

No. of Terminals: 3

The three terminals facilitate simple and straightforward circuit connections, making this transistor user-friendly for both beginners and experienced engineers.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle higher currents and voltages without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs, making this transistor ideal for portable and space-constrained applications.

Minimum DC Current Gain (hFE): 33

The high DC current gain ensures stable and consistent amplification performance, making this transistor suitable for demanding amplification tasks.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows this transistor to withstand challenging environmental conditions, ensuring reliable operation in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides protection against voltage spikes, making this transistor robust and suitable for voltage-sensitive applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable and long-lasting choice for electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle heavy loads without performance degradation, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures reliable solder connections and prevents corrosion, enhancing the lifespan and performance of the transistor.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and design, allowing for various connection configurations and customization options.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for a specified duration, ensuring reliable soldering and assembly in manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating enables this transistor to undergo solder reflow processes without damage, ensuring robust and reliable assembly.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation, making this transistor ideal for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTA123YUA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.54

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTA123YUA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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