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DDTA144VCA-7-F

Diodes Incorporated

DDTA144VCA-7-F by Diodes Incorporated

DDTA144VCA-7-F by Diodes Inc. is a PNP BJT with built-in resistor, ideal for small signal applications. With a max collector-emitter voltage of 50V and max current of 0.03A, it operates up to 150°C. Featuring a transition frequency of 250MHz, this transistor in gull wing package suits compact designs requiring high-speed switching.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 2,928 parts In-Stock

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$0.200

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$0.076

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$0.049

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$0.034

2,928

$0.200

$0.076

$0.049

$0.034

Distributors (In-Stock)

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Chip Stock

USA . 424,000 parts In-Stock

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Vyrian

USA . 4,354 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,280 parts In-Stock

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2,280

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Dan-Mar Components

USA . 2,280 parts In-Stock

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PC Components Company LLC

USA . 1,322 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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Corohmni

South Africa . 1,164 parts In-Stock

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$0.055

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Ampacity Inc.

Singapore . 4,562 parts In-Stock

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$0.153

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Semicontronic

India . 4,482 parts In-Stock

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$0.153

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$0.149

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$0.148

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Aztec Data Supply Inc.

USA . 2,539 parts In-Stock

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$1.350

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Kepictronics

USA . 465,000 parts In-Stock

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Assy Fe

Spain . 465,000 parts In-Stock

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Perfect Parts

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Lixinc

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Eastek

USA . 6,000 parts In-Stock

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$0.020

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Continental Prestige Electronics

USA . 5,011 parts In-Stock

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Argo Parts USA

USA . 4,276 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Looking for a reliable solution for your small signal bipolar junction transistor needs? Look no further than the DDTA144VCA-7-F by Diodes Incorporated. With a reputation for top-quality products, Diodes Incorporated delivers excellence in every component. This PNP transistor with a built-in resistor offers exceptional performance and reliability in a variety of applications. Trust Diodes Incorporated to provide you with the value, benefits, and advantages you need to take your projects to the next level. Choose the DDTA144VCA-7-F for superior quality and performance you can count on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Ideal for circuits requiring PNP transistors, allowing for easy integration into existing designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Saves space and simplifies circuit design by eliminating the need for an external resistor.

Surface Mount: YES

Enables easy and secure mounting on PCBs, facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.2 W

Can handle higher power levels, making it suitable for applications that require increased performance.

Package Shape: RECTANGULAR

Allows for efficient use of space on the PCB, especially in densely populated designs.

Terminal Form: GULL WING

Provides secure and reliable connections during soldering, ensuring stable electrical performance.

No. of Terminals: 3

Simplifies circuit layout and reduces complexity, particularly in compact electronic devices.

Maximum Collector-Emitter Voltage: 50 V

Offers a high voltage rating, enhancing the versatility and compatibility of the transistor in various applications.

Maximum Collector Current (IC): 0.03 A

Capable of handling moderate current levels, suitable for low-power circuit designs.

Nominal Transition Frequency (fT): 250 MHz

Provides high-frequency performance, making it suitable for applications requiring fast switching speeds or RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTA144VCA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 0.21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTA144VCA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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