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.05 A Small Signal Bipolar Junction Transistors (BJT) 57

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSA43RLRAG by Onsemi

MPSA43RLRAG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .05 A;

.05 A

200 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

2N5087RLRAG by Onsemi

2N5087RLRAG

Onsemi

2N5087RLRAG by Onsemi is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.

LOW NOISE

.05 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

2N5088G by Onsemi

2N5088G

Onsemi

2N5088G by Onsemi is a NPN BJT with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150°C in a cylindrical package with through-hole terminals.

LOW NOISE

.05 A

30 V

SINGLE

350

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

2N5088RLRAG by Onsemi

2N5088RLRAG

Onsemi

2N5088RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150 °C in a cylindrical package style.

LOW NOISE

.05 A

30 V

SINGLE

350

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

BF420ZL1G by Onsemi

BF420ZL1G

Onsemi

BF420ZL1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.05A IC, and 60MHz fT. Ideal for amplifier applications, it has a max power dissipation of 0.83W and operates up to 150 °C. The package is cylindrical with through-hole terminals for easy installation.

EUROPEAN PART NUMBER

.05 A

300 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

BF422RL1G by Onsemi

BF422RL1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): .05 A;

EUROPEAN PART NUMBER

.05 A

250 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

BF423G by Onsemi

BF423G

Onsemi

BF423G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 250V, max power dissipation of 0.83W, and min DC current gain of 50. The package is cylindrical in shape with through-hole terminals made of tin silver copper.

.05 A

250 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

60 MHz

BCR151L3E6327 by Infineon Technologies

BCR151L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.05 A

70

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR101L3E6327 by Infineon Technologies

BCR101L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.05 A

70

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON