Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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VQ1001P-E3
Vishay Intertechnology
Vishay Intertechnology's VQ1001P-E3 is an N-CHANNEL Power FET with 0.83A max drain current and 2W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in power management systems or voltage regulation circuits. Operating up to 150°C, it utilizes metal-oxide semiconductor technology for efficient performance.
.83 A
METAL-OXIDE SEMICONDUCTOR
ENHANCEMENT MODE
150 Cel
N-CHANNEL
2 W
FET General Purpose Powers
NO
SIA444DJT-T1-GE3
Vishay Intertechnology's SIA444DJT-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 12A max Drain Current and 0.017 ohm max On Resistance. This MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
12 A
.017 ohm
S-PDSO-N3
e3
1
3
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
19 W
40 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
NO LEAD
DUAL
SWITCHING
SILICON
SIS478DN-T1-GE3
Vishay Intertechnology's SIS478DN-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage. Ideal for switching applications, it features 40A IDM and 0.02 ohm RDS(on). With a max power dissipation of 15.6W and operating temperature up to 150°C, this MOSFET is suitable for various high-power electronic designs.
5 mJ
.02 ohm
S-PDSO-C5
5
15.6 W
Matte Tin (Sn)
C BEND
40
SQM120N03-1M5L_GE3
Vishay Intertechnology's SQM120N03-1M5L_GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A ID. Ideal for applications requiring high pulsed drain current up to 480A, such as power management systems. Features include built-in diode, 0.0015 ohm RDS(on), and EAS of 336mJ for robust performance in enhancement mode operation.
336 mJ
120 A
.0015 ohm
TO-263AB
R-PSSO-G2
2
RECTANGULAR
NOT SPECIFIED
480 A
GULL WING
SINGLE
VS-FB190SA10
VS-FB190SA10 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 720A IDM, 700mJ EAS, and 0.0065 ohm Drain-Source On Resistance. With a max power dissipation of 568W and operating temperature of 150°C, it offers high performance in various industrial settings.
AVALANCHE RATED
700 mJ
ISOLATED
100 V
190 A
.0065 ohm
R-PUFM-X4
4
FLANGE MOUNT
568 W
720 A
UNSPECIFIED
UPPER
SIHG73N60E-GE3
Vishay Intertechnology's SIHG73N60E-GE3 is a N-channel power FET with 600V DS breakdown voltage and 236A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.039 ohm max RDS(on), and 520W max power dissipation.
2030 mJ
600 V
73 A
.039 ohm
TO-247AC
R-PSFM-T3
520 W
236 A
THROUGH-HOLE
SUD50P04-13L-GE3
Vishay Intertechnology's SUD50P04-13L-GE3 is a P-channel FET with 40V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, 0.013 ohm RDS(on), and 100A pulsed drain current. Suitable for enhancement mode operation in power electronics due to its high performance and small outline package style.
80 mJ
40 V
50 A
.013 ohm
TO-252
P-CHANNEL
100 A
SIJ482DP-T1-GE3
Vishay Intertechnology's SIJ482DP-T1-GE3 is a N-CHANNEL FET with 60A max drain current and 69.4W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various industrial and automotive uses.
60 A
69.4 W
SIHG14N50D-GE3
Vishay Intertechnology's SIHG14N50D-GE3 is a N-channel power FET with 500V DS breakdown voltage and 38A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.4 ohm max RDS(on), and 56mJ EAS rating.
56 mJ
500 V
14 A
.4 ohm
38 A
SIHB23N60E-GE3
SIHB23N60E-GE3 by Vishay Intertechnology is a N-channel Power FET with 600V DS breakdown voltage, 23A max drain current, and 0.158 ohm max on-resistance. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode.
353 mJ
23 A
.158 ohm
63 A
SIHB33N60ET1-GE3
SIHB33N60ET1-GE3 by Vishay Intertechnology is a power FET with N-channel polarity. It has a min DS breakdown voltage of 600V and can handle a max pulsed drain current of 88A. This transistor is commonly used for switching applications due to its high performance and small outline package style.
793 mJ
33 A
.099 ohm
88 A
SI5415AEDU-T1-GE3
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: PURE MATTE TIN;
PURE MATTE TIN
SIR670DP-T1-GE3
Vishay Intertechnology's SIR670DP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage and 200A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0048 ohm max RDS(on), and 31.2mJ EAS rating in a small outline package.
31.2 mJ
60 V
.0048 ohm
R-PDSO-C5
200 A
SIS488DN-T1-GE3
Vishay Intertechnology's SIS488DN-T1-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for switching applications, it features a built-in diode, 0.0055 ohm RDS(on), and 20mJ EAS rating. The small outline package with C bend terminals makes it suitable for surface mount designs.
20 mJ
.0055 ohm
SIA453EDJ-T1-GE3
Vishay Intertechnology's SIA453EDJ-T1-GE3 is a P-channel FET with 30V DS breakdown voltage, 80A IDM, and 0.026 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
24 A
.026 ohm
S-PDSO-N6
6
80 A
30
SI7315DN-T1-GE3
Vishay Intertechnology's SI7315DN-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 10A IDM and 0.315 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE with a 9.8mJ EAS rating. Suitable for surface mount designs, it has a SQUARE package shape and DUAL terminal position.
9.8 mJ
150 V
8.9 A
.315 ohm
10 A
SIHP28N65E-GE3
SIHP28N65E-GE3 by Vishay Intertechnology is a power FET with N-channel configuration and 650V min DS breakdown voltage. It is used for switching applications, offering a max pulsed drain current of 84A and a max drain-source on resistance of 0.122 ohm.
691 mJ
650 V
28 A
.122 ohm
TO-220AB
84 A
SIR826ADP-T1-GE3
Vishay Intertechnology's SIR826ADP-T1-GE3 is a N-channel Power FET with 80V DS Breakdown Voltage and 100A IDM. Ideal for switching applications, it features 0.0059 ohm RDS(on) and 61mJ EAS rating. Suitable for surface mount, this MOSFET has a rectangular package shape with C bend terminals.
61 mJ
80 V
.0059 ohm
SIR882DP-T1-GE3
Vishay Intertechnology's SIR882DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 80A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0087 ohm max on-resistance, and operates in enhancement mode.
45 mJ
.0087 ohm
R-XDSO-C5
83 W
SUP85N03-3M6P-GE3
Vishay Intertechnology's SUP85N03-3M6P-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for switching applications, it features 0.0036 ohm RDS(on) and 101mJ EAS rating. Suitable for high-power operations in various electronic devices.
101 mJ
85 A
.0036 ohm
78.1 W
SQP90P06-07L_GE3
Vishay Intertechnology's SQP90P06-07L_GE3 is a P-channel Power FET with 60V DS breakdown voltage and 120A max drain current. Ideal for applications requiring high power handling, such as industrial motor control systems or automotive power management. Features include single configuration with built-in diode and 0.0067 ohm max on-resistance.
320 mJ
.0067 ohm
SUM52N20-39P-E3
Vishay Intertechnology's SUM52N20-39P-E3 is a N-channel FET with 200V DS breakdown voltage, 100A pulsed drain current, and 0.094 ohm max on-resistance. Ideal for power applications requiring high current handling and low on-resistance in a compact small outline package.
31 mJ
200 V
52 A
.094 ohm
175 Cel
250 W
MATTE TIN OVER NICKEL
SI3445DV-T1-GE3
SI3445DV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 8V DS Breakdown Voltage, 20A IDM, and 0.042 ohm RDS(ON). Ideal for power management applications due to its small outline package, 150°C max temp, and 2W power dissipation capability.
8 V
5.6 A
.042 ohm
R-PDSO-G6
20 A
Other Transistors
SI7228DN-T1-GE3
Vishay Intertechnology's SI7228DN-T1-GE3 is an N-channel FET with 2 elements and built-in diode for switching applications. Features include max pulsed drain current of 35A, avalanche energy rating of 9.8mJ, and max power dissipation of 23W. Ideal for high-power switching circuits requiring a small outline package design.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
26 A
8.8 A
S-XDSO-C6
23 W
35 A
Pure Matte Tin (Sn) - annealed
SIR890DP-T1-GE3
Vishay Intertechnology's SIR890DP-T1-GE3 is a N-channel Power FET with 20V DS Breakdown Voltage, ideal for switching applications. Featuring 70A IDM and 0.004 ohm RDS(on), this MOSFET operates in enhancement mode at up to 150°C. Its small outline package with matte tin finish makes it suitable for surface mount designs.
20 V
30 A
.004 ohm
50 W
70 A
SIA430DJ-T1-GE3
Vishay Intertechnology's SIA430DJ-T1-GE3 is an N-channel Power FET with a built-in diode, ideal for switching applications. It features a max drain current of 12A, pulsed drain current of 40A, and low on-resistance of 0.0135 ohm. Operating in enhancement mode, this MOSFET has a breakdown voltage of 20V and can handle up to 19.2W power dissipation at a max temp of 150°C.
.0135 ohm
S-XDSO-N3
19.2 W
SIHFR430ATR-GE3
Vishay Intertechnology's SIHFR430ATR-GE3 is a N-channel FET with 500V DS breakdown voltage, ideal for switching applications. Features include 20A pulsed drain current, 130mJ avalanche energy rating, and 1.7 ohm max drain-source resistance. Its small outline package and high power dissipation make it suitable for enhancement mode operation in various electronic devices.
130 mJ
5 A
1.7 ohm
110 W
SIHFR430ATRL-GE3
Vishay Intertechnology's SIHFR430ATRL-GE3 is a N-channel Power FET with 500V DS breakdown voltage, ideal for switching applications. It features 20A max pulsed drain current and 1.7ohm max drain-source resistance. With a package style of small outline and operating temperature up to 150°C, it offers high performance in compact designs.
SIHFR430ATRR-GE3
SIHFR430ATRR-GE3 by Vishay Intertechnology is a N-channel power FET with a min DS breakdown voltage of 500V. It is used for switching applications and has a max pulsed drain current of 20A.
SUP85N10-10P-GE3
Vishay Intertechnology's SUP85N10-10P-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 240A max pulsed drain current. Ideal for high-power applications, it features a built-in diode, 0.01 ohm max RDS(on), and 180mJ avalanche energy rating.
180 mJ
.01 ohm
227 W
240 A
SI7790DP-T1-GE3
Vishay Intertechnology's SI7790DP-T1-GE3 is an N-channel FET with a built-in diode, ideal for switching applications. It features a 40V DS breakdown voltage, 70A max pulsed drain current, and 0.0045 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates at up to 150°C for enhanced performance.
.0045 ohm
69 W
SI7434DP-T1-E3
Vishay Intertechnology's SI7434DP-T1-E3 is an N-CHANNEL FET for SWITCHING applications. Features include 250V DS Breakdown Voltage, 40A IDM, and 0.155 ohm RDS(on). With a small outline package style and operating temperature up to 150°C, it is ideal for high-power switching circuits.
8.4 mJ
250 V
2.3 A
.155 ohm
R-PDSO-C8
8
5.2 W
SUD50P04-13L-E3
Vishay Intertechnology's SUD50P04-13L-E3 is a P-channel FET with 40V DS breakdown voltage, 100A IDM, and 0.013 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 93.7W.
93.7 W
SI4890BDY-T1-E3
Vishay Intertechnology SI4890BDY-T1-E3 is a N-CHANNEL FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.012 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 5.7W and can handle up to 150°C operating temperature.
16 A
.012 ohm
R-PDSO-G8
e4
5.7 W
SILVER
SI7483ADP-T1-E3
Vishay Intertechnology's SI7483ADP-T1-E3 is a P-CHANNEL FET for switching applications. Features include 30V DS breakdown voltage, 60A IDM, and 0.0057 ohm RDS(on). With a max power dissipation of 5.4W and operating temperature up to 150°C, it is ideal for high-power circuit designs.
.0057 ohm
5.4 W
SI7960DP-T1-E3
Vishay Intertechnology's SI7960DP-T1-E3 is an N-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.021 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and DC-DC converters.
27 mJ
6.2 A
.021 ohm
R-XDSO-C6
3.5 W
SUM110N06-3M4L-E3
Vishay Intertechnology's SUM110N06-3M4L-E3 is a N-channel FET with 60V DS breakdown voltage and 440A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.0034 ohm max RDS(on), and 175°C max operating temp.
280 mJ
110 A
.0034 ohm
375 W
440 A
SI3445DV-T1-E3
Vishay Intertechnology's SI3445DV-T1-E3 is a P-CHANNEL FET with 8V DS Breakdown Voltage and 5.6A Drain Current. Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 2W. Suitable for surface mount designs with its GULL WING terminals and small outline package style.
SI4410BDY-T1-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 1;
11.25 mJ
7.5 A
.014 ohm
72 pF
MS-012AA
-55 Cel
5 W
32 A
44 ns
36 ns
SI4542DY-T1-E3
Vishay Intertechnology's SI4542DY-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL configurations, featuring 30V DS Breakdown Voltage. Ideal for applications requiring high power dissipation up to 2W, it operates in enhancement mode with max drain current of 6.9A. Suitable for surface mount designs due to its small outline package style.
6.1 A
6.9 A
.025 ohm
N-CHANNEL AND P-CHANNEL
SI4880DY-T1-E3
SI4880DY-T1-E3 by Vishay Intertechnology is a N-CHANNEL Power FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 50A IDM and 0.0085 ohm RDS(on). With a max power dissipation of 2.5W and operating temperature up to 150°C, it's suitable for various electronic designs.
13 A
.0085 ohm
2.5 W
SI7540DP-T1-E3
Vishay Intertechnology's SI7540DP-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 7.6A and 0.017 ohm on-resistance, it operates in enhancement mode up to 150°C, making it suitable for various power management tasks.
12 V
5.7 A
7.6 A
Matte Tin (Sn) - annealed
SUD23N06-31L-E3
Vishay Intertechnology's SUD23N06-31L-E3 is a N-channel FET with 60V DS breakdown voltage and 50A IDM. Ideal for switching applications, it features a built-in diode, 0.031 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount assembly, this transistor has a max power dissipation of 100W and can withstand temperatures from -55 to 175°C.
.031 ohm
100 W
SUD45P03-10-E3
Vishay Intertechnology's SUD45P03-10-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 15A Drain Current, and 0.018 ohm On Resistance. Ideal for power management applications due to its 100A Pulsed Drain Current capability in a small outline package.
15 A
.018 ohm
4 W
SUD50P04-15-E3
Vishay Intertechnology's SUD50P04-15-E3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 150A IDM, and 0.015 ohm RDS(ON). Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 175°C.
.015 ohm
3 W
150 A
SUM110N04-03-E3
SUM110N04-03-E3 by Vishay Intertechnology is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and max drain current of 110A. This transistor is commonly used for switching applications due to its high pulsed drain current and low drain-source on resistance.
.0028 ohm
437.5 W
SUM40N10-30-E3
Vishay Intertechnology's SUM40N10-30-E3 is a N-channel power FET with 100V DS breakdown voltage and 40A max drain current. Ideal for switching applications, it features a built-in diode, 0.03 ohm max on-resistance, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 107W at 175°C.
.03 ohm
107 W
75 A
SUP65P04-15-E3
Vishay Intertechnology's SUP65P04-15-E3 is a P-channel FET with 40V DS breakdown voltage and 65A max drain current. Ideal for power applications, it features a single configuration with built-in diode, 0.015 ohm max on-resistance, and operates in enhancement mode up to 175°C.
65 A
120 W
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