Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SUP75P03-07-E3
Vishay Intertechnology
Vishay Intertechnology's SUP75P03-07-E3 is a P-channel Power FET with 30V DS breakdown voltage and 0.007 ohm RDS(on). Ideal for high-power applications, it features 240A IDM, 75A ID, and 187W Pd max. Suitable for enhancement mode operation in various electronic systems.
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
75 A
.007 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
P-CHANNEL
187 W
240 A
Not Qualified
Other Transistors
NO
MATTE TIN OVER NICKEL
THROUGH-HOLE
SINGLE
SILICON
SUM110N06-3M9H-E3
Vishay Intertechnology's SUM110N06-3M9H-E3 is a N-channel Power FET with 60V DS breakdown voltage and 440A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it offers 0.0039 ohm max drain-source resistance and 375W power dissipation.
245 mJ
60 V
110 A
.0039 ohm
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
260
N-CHANNEL
375 W
440 A
FET General Purpose Power
YES
MATTE TIN
GULL WING
30
SWITCHING
SIHF9640S-GE3
Vishay Intertechnology's SIHF9640S-GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A Max IDM, 700mJ EAS, and 0.5 ohm RDS(ON). With GULL WING terminals and SMALL OUTLINE package style, it operates at up to 150°C.
AVALANCHE RATED
700 mJ
200 V
11 A
.5 ohm
150 Cel
125 W
44 A
40
SQJ962EP-T1-GE3
Vishay Intertechnology's SQJ962EP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 32A IDM, and 0.06 ohm RDS(on). Ideal for power management applications requiring high drain current handling in compact designs. Operates in enhancement mode with built-in diode elements, suitable for surface mount assembly with Gull Wing terminals.
5 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
8 A
.06 ohm
R-PSSO-G4
4
25 W
32 A
SQ2319ES-T1-GE3
Vishay Intertechnology's SQ2319ES-T1-GE3 is a P-channel FET with 40V DS breakdown voltage, 30A IDM, and 0.082 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 175°C, it offers high power dissipation of 3W.
1.8 mJ
40 V
3.3 A
.082 ohm
TO-236
R-PDSO-G3
3 W
30 A
DUAL
SI4890BDY-T1-GE3
SI4890BDY-T1-GE3 by Vishay Intertechnology is a N-channel Power FET with 30V DS breakdown voltage and 16A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max pulsed drain current of 60A. Suitable for surface mount with Gull Wing terminals, this MOSFET has an operating temperature of up to 150°C.
20 mJ
16 A
.012 ohm
R-PDSO-G8
8
60 A
SQD50N04-09H-GE3
Vishay Intertechnology's SQD50N04-09H-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 50A max drain current. Ideal for applications requiring high power dissipation, such as in power supplies or motor control systems. Features include built-in diode, small outline package style, and matte tin terminal finish.
76 mJ
50 A
.009 ohm
TO-252
83.3 W
100 A
SUD45P03-09-GE3
Vishay Intertechnology's SUD45P03-09-GE3 is a P-channel Power FET with 30V DS breakdown voltage and 45A max drain current. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 41.7W and operating temperature up to 150°C, this MOSFET offers high performance in a small outline package.
61 mJ
45 A
.0087 ohm
41.7 W
SQ7415AEN-T1_GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 64 A; JESD-30 Code: S-XDSO-C5; Transistor Element Material: SILICON;
26 mJ
.065 ohm
S-XDSO-C5
5
UNSPECIFIED
SQUARE
64 A
C BEND
SQS401EN-T1_GE3
Vishay Intertechnology's SQS401EN-T1_GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 30A IDM, and 0.029 ohm RDS(on). Ideal for power applications requiring high drain current handling in small outline packages. Operating in enhancement mode, it offers a max temperature of 175°C and an EAS of 9.8 mJ.
9.8 mJ
12 A
.029 ohm
240
SI4880DY-T1-GE3
SI4880DY-T1-GE3 by Vishay Intertechnology is a N-channel Power FET with 30V DS breakdown voltage and 13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode.
13 A
.0085 ohm
NOT SPECIFIED
2.5 W
FET General Purpose Powers
SUM90140E-GE3
Vishay Intertechnology's SUM90140E-GE3 is a N-channel FET with 200V DS breakdown voltage and 240A max pulsed drain current. Ideal for switching applications, it features 0.018 ohm max RDS(on) and 180mJ EAS rating. The transistor operates in enhancement mode, has a gull wing terminal form, and comes in a small outline package style.
180 mJ
90 A
.018 ohm
SUP70090E-GE3
Vishay Intertechnology's SUP70090E-GE3 is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 120A max pulsed drain current and 0.0089 ohm max RDS(on). The transistor operates in enhancement mode and has an avalanche energy rating of 80mJ, making it suitable for high-power requirements.
80 mJ
100 V
.0089 ohm
120 A
SIR871DP-T1-GE3
Vishay Intertechnology's SIR871DP-T1-GE3 is a P-CHANNEL FET with 100V DS Breakdown Voltage and 300A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.02 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE.
48 A
.02 ohm
R-PDSO-F5
-55 Cel
300 A
FLAT
SIJA58DP-T1-GE3
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SUP90142E-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
.0169 ohm
24 pF
Tin (Sn)
204 ns
278 ns
SI7190ADP-T1-RE3
Vishay Intertechnology's SI7190ADP-T1-RE3 is a N-channel FET with 250V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 30A and EAS of 4.05mJ, this MOSFET operates in enhancement mode with a 0.102ohm RDS(on). Its small outline package and high power dissipation make it suitable for various electronic designs.
4.05 mJ
250 V
14.4 A
.102 ohm
7 pF
56.8 W
60 ns
45 ns
SI7434ADP-T1-RE3
Vishay Intertechnology's SI7434ADP-T1-RE3 is a N-channel FET with 250V DS breakdown voltage and 25A pulsed drain current. Ideal for switching applications, it features a built-in diode, 7.2mJ avalanche energy rating, and 0.15 ohm max drain-source resistance.
7.2 mJ
12.3 A
.15 ohm
2 pF
54.3 W
25 A
65 ns
51 ns
SIRC06DP-T1-GE3
Vishay Intertechnology's SIRC06DP-T1-GE3 is a N-channel Power FET with 30V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 100A IDM and 11.25mJ EAS ratings. Operating in enhancement mode, this MOSFET has 0.0027 ohm RDS(on) and can handle up to 50W power dissipation at a max temp of 150°C.
11.25 mJ
.0027 ohm
60 pF
50 W
62 ns
52 ns
SIZF914DT-T1-GE3
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SIR112DP-T1-RE3
Vishay Intertechnology's SIR112DP-T1-RE3 is a N-channel Power FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it features a built-in diode, 45mJ avalanche energy rating, and 0.00196 ohm max drain-source resistance.
45 mJ
133 A
.00196 ohm
90 pF
62.5 W
200 A
80 ns
90 ns
SIHD1K4N60E-GE3
SIHD1K4N60E-GE3 by Vishay Intertechnology is a power FET with N-channel polarity, 600V DS breakdown voltage, and 5A max pulsed drain current. It is used for switching applications in small outline packages.
14 mJ
600 V
4.2 A
1.45 ohm
4 pF
TO-252AA
63 W
5 A
64 ns
66 ns
SIDR680ADP-T1-RE3
Power Field-Effect Transistors; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
TIN
SIHFPS43N50K-GE3
SIHFPS43N50K-GE3 by Vishay Intertechnology is a N-CHANNEL FET with 500V DS Breakdown Voltage, 190A IDM, and 910mJ EAS. Ideal for SWITCHING applications due to its 0.09 ohm RDS(on), 540W Pdiss, and -55 to 150°C operating range.
910 mJ
500 V
47 A
.09 ohm
120 pF
R-PSIP-T3
IN-LINE
540 W
190 A
IRFBC40LCPBF-BE3
Power Field-Effect Transistors;
SQ7415AEN-T1_BE3
Vishay Intertechnology's SQ7415AEN-T1_BE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage and 64A IDM. Ideal for power applications, it operates in Enhancement Mode with -55 to 175 °C temperature range. Featuring a built-in diode, this MOSFET has 0.065 ohm Drain-Source On Resistance and 105pF Crss.
105 pF
S-PDSO-F8
68 ns
28 ns
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