Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB019N08N5ATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 224 W; No. of Terminals: 6; Avalanche Energy Rating (EAS): 374 mJ;
374 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
80 V
180 A
.00195 ohm
METAL-OXIDE SEMICONDUCTOR
86 pF
R-PSSO-G6
e3
1
6
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
224 W
720 A
IEC-61249-2-21
YES
TIN
GULL WING
SINGLE
SWITCHING
SILICON
IPW60R105CFD7XKSA1
Infineon's IPW60R105CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 79A IDM and 0.105ohm RDS(on), it operates in enhancement mode with 106W power dissipation. Suitable for high-power systems requiring efficient current control.
93 mJ
600 V
21 A
.105 ohm
TO-247
R-PSFM-T3
3
150 Cel
FLANGE MOUNT
106 W
79 A
NO
THROUGH-HOLE
IPP60R600P7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 600 V;
17 mJ
6 A
.6 ohm
TO-220AB
30 W
16 A
IRL60SC216ARMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Terminal Position: SINGLE; Moisture Sensitivity Level (MSL): 1;
531 mJ
60 V
324 A
.0015 ohm
810 pF
TO-263CB
260
375 W
1296 A
MATTE TIN OVER NICKEL
30
IPD06P004NATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
209 mJ
16.4 A
.09 ohm
TO-252
R-PSSO-G2
2
P-CHANNEL
63 W
65.6 A
IPL65R165CFDAUMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 195 W; Maximum Drain Current (Abs) (ID): 21.3 A; Package Shape: SQUARE;
614 mJ
650 V
21.3 A
.165 ohm
S-PSSO-N4
2A
4
-40 Cel
SQUARE
195 W
67 A
NO LEAD
IPL65R210CFDAUMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 151 W; Transistor Element Material: SILICON; No. of Terminals: 4;
484 mJ
16.6 A
.21 ohm
NOT SPECIFIED
151 W
53 A
Tin (Sn)
IPL65R340CFDAUMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104.2 W; Maximum Drain-Source On Resistance: .34 ohm; No. of Terminals: 4;
290 mJ
10.9 A
.34 ohm
104.2 W
32 A
IPD65R1K4CFDATMA2
IPD65R1K4CFDATMA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 8.2A IDM and 26mJ EAS, operating in ENHANCEMENT MODE at -55 to 150°C. The PLASTIC/EPOXY package has GULL WING terminals and a DRAIN connection, suitable for surface mount designs with 1.4Ω RDS(on).
26 mJ
2.8 A
1.4 ohm
28.4 W
8.2 A
IPA65R190CFDXKSA2
Infineon's IPA65R190CFDXKSA2 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 57.2A pulsed drain current, 484mJ avalanche energy rating, and 0.19 ohm max on-resistance. Operating in enhancement mode, it has a max power dissipation of 34W and can withstand temperatures up to 150°C.
ISOLATED
17.5 A
.19 ohm
34 W
57.2 A
IPB65R125C7ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 101 W; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .125 ohm;
89 mJ
18 A
.125 ohm
TO-263AB
101 W
75 A
IPB65R225C7ATMA2
Infineon's IPB65R225C7ATMA2 is a N-CHANNEL FET with 650V DS breakdown voltage and 41A IDM. Ideal for switching applications, it operates in enhancement mode with 0.225 ohm RDS(on) and 63W power dissipation. Suitable for high-power systems requiring efficient performance in a compact package.
48 mJ
11 A
.225 ohm
41 A
IPP65R110CFDXKSA2
Infineon's IPP65R110CFDXKSA2 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. Featuring 99.6A IDM and 0.11 ohm RDS(on), it operates in ENHANCEMENT MODE with 277.8W power dissipation, suitable for high-power systems. With a temperature range of -55 to 150 °C, it offers reliable performance in various environments.
845 mJ
31.2 A
.11 ohm
277.8 W
99.6 A
IPP65R150CFDXKSA2
IPP65R150CFDXKSA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a 72A Max Pulsed Drain Current and 0.15 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 195.3W power dissipation.
22.4 A
.15 ohm
195.3 W
72 A
IPW65R080CFDFKSA2
Infineon's IPW65R080CFDFKSA2 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 137A IDM, 1160mJ EAS, and 0.08 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max temp of 150°C, making it suitable for high-power systems.
1160 mJ
43.3 A
.08 ohm
391 W
137 A
DF11MR12W1M1B11BPSA1
Infineon's DF11MR12W1M1B11BPSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 100A IDM, and operates in enhancement mode. Ideal for high-power applications requiring complex configurations and isolated case connections.
COMPLEX
1200 V
R-XUFM-P21
21
UNSPECIFIED
100 A
PIN/PEG
UPPER
FF8MR12W2M1B11BOMA1
Infineon's FF8MR12W2M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features series connected, center tap configuration with 2 elements, built-in diode and thermistor. With max pulsed drain current of 300A, this MOSFET operates in enhancement mode at temperatures ranging from -40 to 150°C.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
35
300 A
SILICON CARBIDE
IAUS300N04S4N007ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Feedback Capacitance (Crss): 368 pF; Maximum Drain Current (Abs) (ID): 300 A;
ULTRA LOW ON RESISTANCE
1100 mJ
40 V
.00074 ohm
368 pF
R-PSSO-G8
8
1200 A
AEC-Q101
IGOT60R070D1AUMA1
IGOT60R070D1AUMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. It features a 600V DS Breakdown Voltage, 60A IDM, and 0.07 ohm RDS(on). With GALLIUM NITRIDE material and ENHANCEMENT MODE operation, it operates b/w -55 to 150 °C for high-power switching needs.
31 A
.07 ohm
.3 pF
R-PDSO-G20
20
125 W
60 A
DUAL
GALLIUM NITRIDE
IGT60R070D1ATMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 600 V;
R-PSSO-F3
FLAT
IGT60R190D1SATMA1
Infineon's IGT60R190D1SATMA1 is a N-CHANNEL FET for SWITCHING applications. With 600V DS Breakdown Voltage, it offers 23A IDM and 0.19 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this GaN transistor has a max power dissipation of 55.5W and operates b/w -55 to 150 °C.
12.5 A
.15 pF
55.5 W
23 A
IPD95R1K2P7ATMA1
IPD95R1K2P7ATMA1 by Infineon is a N-CHANNEL FET with 950V DS breakdown voltage, ideal for switching applications. It features a max IDM of 16A and EAS of 11mJ, operating in enhancement mode. With a package style of small outline and GULL WING terminals, it offers high power dissipation up to 52W at temperatures ranging from -55°C to 150°C.
11 mJ
950 V
1.2 ohm
52 W
IPP60R105CFD7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 106 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (Abs) (ID): 21 A;
IPS65R1K0CEAKMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-251; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 7.2 A;
50 mJ
7.2 A
1 ohm
TO-251
R-PSIP-T3
IN-LINE
12 A
IPW80R290C3AFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; JESD-30 Code: R-PSFM-T3; Maximum Operating Temperature: 150 Cel;
670 mJ
800 V
17 A
.29 ohm
227 W
51 A
IRF1010EZSTRLP
IRF1010EZSTRLP by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, suitable for SWITCHING applications. It has a max IDM of 340A and EAS of 99mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and GULL WING terminals, it offers 0.0085 ohm Drain-Source On Resistance.
AVALANCHE RATED, ULTRA-LOW RESISTANCE
99 mJ
.0085 ohm
140 W
340 A
IRL40T209ATMA1
Infineon's IRL40T209ATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage and 1200A pulsed drain current, ideal for switching applications. Featuring a built-in diode, it has a low on-resistance of 0.00072 ohm and can handle up to 500W power dissipation. Operating from -55°C to 175°C, this MOSFET is designed for high-power tasks in compact layouts.
875 mJ
.00072 ohm
R-PSSO-F8
500 W
FF45MR12W1M1B11BOMA1
Infineon's FF45MR12W1M1B11BOMA1 is a N-Channel FET with 1200V DS Breakdown Voltage, 5.55V VCEsat, and 0.045ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with built-in diode and thermistor. Operating in enhancement mode, this FET has a max pulsed drain current of 50A and can withstand temperatures from -40 to 150°C.
.045 ohm
14 pF
20 V
R-XUFM-X10
10
N-Channel
50 A
55300 ns
14100 ns
5.55 V
FF6MR12W2M1B11BOMA1
Infineon's FF6MR12W2M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 400A IDM, and 0.00563 ohm RDS(on). Ideal for high-power switching applications due to its series connected configuration, built-in diode, and thermistor. Operating in enhancement mode with fast turn-on/off times of 39.1ns and 92.6ns respectively.
200 A
.00563 ohm
112 pF
400 A
UL RECOGNIZED
92.6 ns
39.1 ns
IPA95R1K2P7XKSA1
IPA95R1K2P7XKSA1 by Infineon Technologies is a N-CHANNEL FET with 950V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 16A and an avalanche energy rating of 11mJ. With a package style of FLANGE MOUNT and operating temperature range from -55 to 150 °C, it offers reliable performance in various environments.
27 W
IPB80R290C3AATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 227 W; Avalanche Energy Rating (EAS): 670 mJ; Maximum Drain Current (ID): 17 A;
FF6MR12KM1BOSA1
Infineon's FF6MR12KM1BOSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring series connected, center tap configuration and built-in diode elements, it offers 500A IDM and 0.00581 ohm max drain-source resistance. With Silicon Carbide material and UL recognition, this MOSFET operates b/w -40 to 150 °C for high-power requirements.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
250 A
.00581 ohm
R-XUFM-X7
7
500 A
167.9 ns
102.8 ns
FF6MR12KM1PHOSA1
Infineon's FF6MR12KM1PHOSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring series connected, center tap configuration with built-in diode, it has max IDM of 500A and 0.00581 ohm RDS(on). Operating in enhancement mode at -40 to 150 °C, this MOSFET is UL recognized and designed for high-power systems.
FS03MR12A6MA1LB
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Transistor Element Material: SILICON CARBIDE; Transistor Application: SWITCHING; No. of Terminals: 39;
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
.0037 ohm
170 pF
R-XUFM-X39
39
800 A
IPD088N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Maximum Pulsed Drain Current (IDM): 200 A; JESD-609 Code: e3;
43 mJ
.0088 ohm
23 pF
71 W
IRF2804STRL7PP
Infineon Technologies' IRF2804STRL7PP is a power FET with N-channel polarity and a built-in diode. It is designed for switching applications, offering a min DS breakdown voltage of 40V and max pulsed drain current of 1360A. Its small outline package style and low on-resistance make it suitable for high-power operations.
630 mJ
160 A
.0016 ohm
970 pF
330 W
1360 A
IRFR12N25DTRRP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 250 mJ;
250 mJ
250 V
14 A
.26 ohm
22 pF
TO-252AA
144 W
56 A
IMZA120R007M1HXKSA1
IMZA120R007M1HXKSA1 by Infineon is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode and Kelvin sensor, it operates in enhancement mode with 504A IDM and 638mJ EAS. With a max power dissipation of 750W, this MOSFET has a low 0.0111 ohm RDS(on) for efficient performance at temperatures ranging from -55 to 175°C.
638 mJ
SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
225 A
.0111 ohm
61 pF
R-PSFM-T4
750 W
504 A
IMZA120R040M1HXKSA1
IMZA120R040M1HXKSA1 by Infineon is a N-CHANNEL FET with 1200V DS breakdown voltage, 117A IDM, and 0.0615 ohm max RDS(on). It's used for switching applications due to its single configuration with built-in diode. The transistor operates in enhancement mode and has a max power dissipation of 227W.
339 mJ
55 A
.0615 ohm
11 pF
117 A
IMW120R020M1HXKSA1
IMW120R020M1HXKSA1 by Infineon is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 213A and EAS of 721mJ. Operating in ENHANCEMENT MODE, this FET has a max ID of 98A and 0.03ohm RDS(on), suitable for high-power systems.
721 mJ
98 A
.03 ohm
213 A
BSC010N04LSCATMA1
BSC010N04LSCATMA1 by Infineon is a N-CHANNEL FET with 40V DS Breakdown Voltage, 1128A IDM, and 0.00135 ohm Drain-Source On Resistance. Ideal for power applications requiring high drain current handling and low on-resistance in a small outline package.
330 mJ
248 A
.00135 ohm
320 pF
R-PDSO-F8
139 W
1128 A
IEC-61249-2-21; IEC-68-1
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