Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB45N06S409ATMA2
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 45 A; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-263AB;
97 mJ
SINGLE WITH BUILT-IN DIODE
60 V
45 A
.0091 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
180 A
AEC-Q101
YES
TIN
GULL WING
SINGLE
SILICON
IPB80N08S406ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Reference Standard: AEC-Q101; Package Shape: RECTANGULAR;
270 mJ
DRAIN
80 V
80 A
.0047 ohm
320 A
IPD80R1K0CEBTMA1
IPD80R1K0CEBTMA1 by Infineon is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 18A pulsed drain current and 0.95 ohm on-resistance. This small outline transistor has a max ID of 5.7A and can withstand temperatures as low as -55°C.
230 mJ
800 V
5.7 A
.95 ohm
TO-252
-55 Cel
18 A
SWITCHING
IPD80R1K4CEBTMA1
Infineon's IPD80R1K4CEBTMA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Features include 12A pulsed drain current, 170mJ avalanche energy rating, and 1.4 ohm max on-resistance. Suitable for enhancement mode operation in various power electronics systems.
170 mJ
3.9 A
1.4 ohm
12 A
IPD80R2K8CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 800 V;
90 mJ
1.9 A
2.8 ohm
6 A
IPI80N08S406AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Terminal Finish: TIN; JESD-609 Code: e3;
.0058 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
NO
THROUGH-HOLE
IPS80R1K2P7AKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: 1.2 ohm; Operating Mode: ENHANCEMENT MODE;
10 mJ
1.2 ohm
TO-251
11 A
IPU80R1K4CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-251; No. of Terminals: 3; JESD-30 Code: R-PSIP-T3;
IPSA70R1K2P7SAKMA1
IPSA70R1K2P7SAKMA1 by Infineon is a N-CHANNEL FET with 700V DS breakdown voltage and 9.4A IDM. It is used for switching applications, featuring a single configuration with built-in diode. The transistor operates in enhancement mode, with a max RDS(on) of 1.2 ohm and -40°C min temperature rating.
700 V
-40 Cel
9.4 A
IPW60R120P7XKSA1
IPW60R120P7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 78A and an on-resistance of 0.12 ohm. The transistor operates in enhancement mode and has a built-in diode, making it suitable for high-power applications.
82 mJ
600 V
.12 ohm
TO-247
R-PSFM-T3
FLANGE MOUNT
78 A
IPW60R180P7XKSA1
IPW60R180P7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 53A IDM, 56mJ EAS, and 0.18 ohm RDS(on). Package style is FLANGE MOUNT with TIN finish, suitable for ENHANCEMENT MODE operation at -55°C.
56 mJ
.18 ohm
53 A
JANSR2N7583U2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Style (Meter): SMALL OUTLINE;
283 mJ
ISOLATED
200 V
56 A
.028 ohm
R-CDSO-N3
150 Cel
CERAMIC, METAL-SEALED COFIRED
250 W
224 A
Qualified
MIL-19500; RH - 100K Rad(Si)
NO LEAD
DUAL
150 ns
200 ns
BSL305SPEH6327XTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
AVALANCHE RATED
20 mJ
30 V
5.3 A
.045 ohm
R-PDSO-G6
6
P-CHANNEL
21.2 A
IPD50R950CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;
68 mJ
500 V
NOT SPECIFIED
12.8 A
IPD60R1K0CEATMA1
IPD60R1K0CEATMA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 12A IDM and 1 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 61W and can withstand temperatures from -40 to 150°C.
46 mJ
6.8 A
1 ohm
61 W
IPD60R1K5CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; Minimum DS Breakdown Voltage: 600 V; JESD-30 Code: R-PSSO-G2;
26 mJ
5 A
1.5 ohm
49 W
8 A
IPD60R2K1CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: SWITCHING; Package Style (Meter): SMALL OUTLINE;
11 mJ
2.1 ohm
IPD60R400CEATMA1
IPD60R400CEATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a built-in diode, 30A IDM, and 0.4 ohm RDS(on), suitable for SWITCHING applications. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE with -40°C Min Operating Temp and DRAIN case connection.
210 mJ
.4 ohm
30 A
IPD60R460CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum Operating Temperature: -40 Cel; Package Style (Meter): SMALL OUTLINE;
185 mJ
.46 ohm
26 A
IPD60R650CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Case Connection: DRAIN; No. of Elements: 1;
133 mJ
.65 ohm
19 A
IPD60R650CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-PSSO-G2; Terminal Form: GULL WING;
IPD60R800CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G2;
72 mJ
.8 ohm
15.7 A
IPD65R650CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Transistor Element Material: SILICON; No. of Elements: 1;
142 mJ
650 V
IPP80N07S405AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .0055 ohm;
240 mJ
75 V
.0055 ohm
TO-220AB
IPU60R1K0CEBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Maximum Pulsed Drain Current (IDM): 12 A; JESD-30 Code: R-PSIP-T3;
IPU60R1K5CEBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; Maximum Pulsed Drain Current (IDM): 8 A; Minimum DS Breakdown Voltage: 600 V;
AUIRFR8403TRLARMA1
AUIRFR8403TRLARMA1 by Infineon is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. It features a max IDM of 520A and EAS of 114mJ, suitable for enhancement mode operation. This MOSFET has a drain-source on resistance of 0.0031 ohm and meets AEC-Q101 standards for automotive use.
114 mJ
40 V
100 A
.0031 ohm
TO-252AA
520 A
DF11MR12W1M1B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 2; Minimum DS Breakdown Voltage: 1200 V; Package Body Material: UNSPECIFIED;
COMPLEX
1200 V
R-XUFM-P21
21
UNSPECIFIED
PIN/PEG
UPPER
DF23MR12W1M1B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
R-XUFM-X21
50 A
FF11MR12W1M1B11BOMA1
Infineon's FF11MR12W1M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 200A IDM, and -40°C min. operating temp. Ideal for switching applications, it features series connected elements with built-in diode and thermistor in a rectangular package style.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X18
18
200 A
IPD60R380P6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Finish: TIN; Package Shape: RECTANGULAR;
.38 ohm
29 A
IPI70R950CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 50 mJ; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN;
50 mJ
IPS60R3K4CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; JEDEC-95 Code: TO-251; Terminal Form: THROUGH-HOLE;
6 mJ
3.4 ohm
IPU50R2K0CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; JEDEC-95 Code: TO-251;
34 mJ
2 ohm
6.1 A
BSP296NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G4;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
15 mJ
100 V
1.2 A
.6 ohm
R-PDSO-G4
4
4.6 A
BUZ73AH3046
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-220AB;
120 mJ
5.5 A
22 A
BUZ73H3046XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 28 A; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
7 A
28 A
IPB029N06N3GE8187ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .0032 ohm; Maximum Operating Temperature: 175 Cel;
235 mJ
120 A
.0032 ohm
175 Cel
480 A
IPB039N10N3GE8187ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE; Transistor Application: SWITCHING;
340 mJ
160 A
.0039 ohm
TO-263AA
R-PSSO-G6
640 A
IPB042N10N3GE8187ATMA1
Infineon's IPB042N10N3GE8187ATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.0042 ohm RDS(on), and 400A IDM. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.
.0042 ohm
400 A
IPG20N06S2L65AUMA1
Infineon's IPG20N06S2L65AUMA1 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, 80A IDM, and 0.065 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
40 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
55 V
20 A
.065 ohm
R-PDSO-F8
8
FLAT
IPU60R1K0CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Minimum DS Breakdown Voltage: 600 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPU60R1K5CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
IRF100P219XKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
464 mJ
195 A
.0017 ohm
TO-247AC
780 A
IPDD60R050G7XTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 278 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
159 mJ
47 A
.05 ohm
R-PDSO-G10
10
278 W
135 A
IPW60R040CFD7XKSA1
IPW60R040CFD7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a max pulsed drain current of 212A and an avalanche energy rating of 249mJ. With a package style of FLANGE MOUNT, it operates in temperatures ranging from -55 to 150 °C.
249 mJ
.04 ohm
227 W
212 A
IPW60R055CFD7XKSA1
Infineon's IPW60R055CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 153A max pulsed drain current and 0.055 ohm max on-resistance. With a power dissipation of 178W, it operates in temperatures ranging from -55 to 150°C.
180 mJ
38 A
.055 ohm
178 W
153 A
IPW60R125CFD7XKSA1
Infineon's IPW60R125CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 66A IDM and 0.125 ohm RDS(on), it operates in enhancement mode with 92W power dissipation. Suitable for high-power systems, this transistor has a max operating temperature of 150°C and avalanche energy rating of 78mJ.
78 mJ
.125 ohm
92 W
66 A
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