Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPP023N08N5AKSA1
Infineon Technologies
IPP023N08N5AKSA1 by Infineon is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 480A IDM, 0.0023 ohm RDS(on), and 674mJ EAS rating. Package style is FLANGE MOUNT with TIN finish, suitable for ENHANCEMENT MODE operation.
674 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
80 V
120 A
.0023 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
480 A
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IPP023N10N5AKSA1
IPP023N10N5AKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0023 ohm RDS(on), and 120A ID. Ideal for SWITCHING applications due to its 480A IDM and 979mJ EAS ratings. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
979 mJ
100 V
IPP027N08N5AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
374 mJ
.0027 ohm
IPP030N10N5AKSA1
IPP030N10N5AKSA1 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has a max IDM of 480A and 0.003 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation.
461 mJ
.003 ohm
IPP051N15N5AKSA1
IPP051N15N5AKSA1 by Infineon is a N-CHANNEL FET with 150V DS breakdown voltage, 120A max drain current, and 0.0051 ohm max on resistance. Ideal for switching applications due to its 480A pulsed drain current capability. Package style is flange mount with through-hole terminals.
230 mJ
150 V
.0051 ohm
IPP076N15N5AKSA1
Infineon's IPP076N15N5AKSA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0076 ohm RDS(on), and 448A IDM. Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor has a rectangular package shape, through-hole terminals, and can handle up to 112A drain current.
130 mJ
112 A
.0076 ohm
448 A
IPP083N10N5AKSA1
IPP083N10N5AKSA1 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has a max IDM of 292A and 0.0083 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE.
42 mJ
73 A
.0083 ohm
292 A
IPP410N30NAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 240 mJ; JEDEC-95 Code: TO-220AB;
240 mJ
300 V
44 A
.041 ohm
176 A
IPW60R041P6FKSA1
IPW60R041P6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 0.041 ohm RDS(on), and 267A IDM. It's used for switching applications due to its single configuration with built-in diode and enhancement mode operation. The transistor features a metal-oxide semiconductor technology and silicon element material in a rectangular package style.
1954 mJ
600 V
TO-247
267 A
IPZ60R070P6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; JESD-30 Code: R-PSFM-T4; Minimum DS Breakdown Voltage: 600 V;
1136 mJ
.07 ohm
R-PSFM-T4
4
156 A
IPZ60R099P6FKSA1
Infineon's IPZ60R099P6FKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.099 ohm RDS(on), and 109A IDM. Ideal for switching applications, this MOSFET features a built-in diode, operates in enhancement mode, and has an EAS of 796mJ.
796 mJ
.099 ohm
109 A
IPZ60R125P6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
636 mJ
.125 ohm
87 A
SPB04N60C3E3045A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-263AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AVALANCHE RATED
4.5 A
.95 ohm
TO-263AB
R-PSSO-G2
2
150 Cel
SMALL OUTLINE
13.5 A
YES
GULL WING
SPW17N80C3A
SPW17N80C3A by Infineon is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It has a max ID of 17A and 0.29 ohm Drain-Source On Resistance, making it ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, this transistor can handle up to 51A IDM and has an EAS rating of 670mJ at a max temp of 150°C.
AVALANCHE RATED, HIGH VOLTAGE
670 mJ
800 V
17 A
.29 ohm
51 A
IPB120N03S4L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;
75 mJ
30 V
AEC-Q101
IPB120N04S404ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; No. of Terminals: 2; Case Connection: DRAIN;
40 V
.0036 ohm
IPB140N08S404ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; No. of Elements: 1; JEDEC-95 Code: TO-263;
212 mJ
140 A
.0042 ohm
TO-263
R-PSSO-G6
6
560 A
IPB160N08S403ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
350 mJ
160 A
.0032 ohm
640 A
IPB180N04S4L01ATMA1
Infineon's IPB180N04S4L01ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 180A ID. Ideal for automotive applications, it features a built-in diode, 720A IDM, and 0.0012 ohm RDS(on) in a small outline package.
550 mJ
180 A
.0012 ohm
720 A
IPB180N04S4LH0ATMA1
Infineon's IPB180N04S4LH0ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 180A ID, and 0.001 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
850 mJ
.001 ohm
IPB180N08S402ATMA1
Infineon's IPB180N08S402ATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, 720A IDM, and 0.0022 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
ULTRA LOW RESISTANCE
640 mJ
.0022 ohm
IPB240N03S4LR8ATMA1
Infineon's IPB240N03S4LR8ATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage and 240A ID. Ideal for power applications, it features a built-in diode, 960A IDM, and 0.00104 ohm RDS(on). AEC-Q101 compliant, this MOSFET is suitable for automotive and industrial sectors.
945 mJ
240 A
.00104 ohm
960 A
IPB240N03S4LR9ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G6; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
750 mJ
.00145 ohm
IPB240N04S41R0ATMA1
Infineon's IPB240N04S41R0ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 960A IDM, and 0.001 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IPB240N04S4R9ATMA1
Infineon's IPB240N04S4R9ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 960A IDM, and 0.00087 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
.00087 ohm
IPB80N06S207ATMA4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING;
530 mJ
55 V
80 A
.0063 ohm
175 Cel
320 A
IPC100N04S402ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 100 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
315 mJ
100 A
.0024 ohm
R-PDSO-F8
8
400 A
FLAT
DUAL
IPC60N04S406ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;
120 mJ
60 A
.006 ohm
IPC60N04S4L06ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: FLAT; Maximum Drain Current (ID): 60 A;
.0079 ohm
IPC80N04S403ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Package Shape: RECTANGULAR;
215 mJ
.0033 ohm
IPI80N06S207AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
.0066 ohm
TO-262AA
R-PSIP-T3
IN-LINE
IPLU300N04S4R7XTMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Reference Standard: AEC-Q101; Maximum Pulsed Drain Current (IDM): 1200 A;
300 A
.00076 ohm
R-PSSO-F8
NOT SPECIFIED
1200 A
IPI120N10S405AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; JEDEC-95 Code: TO-262AA; Maximum Feedback Capacitance (Crss): 200 pF;
330 mJ
.0053 ohm
200 pF
-55 Cel
190 W
IPP120N10S405AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Maximum Drain-Source On Resistance: .0053 ohm; JESD-609 Code: e3;
IPB50N12S3L15ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Reference Standard: AEC-Q101; Terminal Finish: TIN;
120 V
50 A
.0206 ohm
200 A
IPB70N12S3L12ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-263AB; Terminal Position: SINGLE;
410 mJ
70 A
.0155 ohm
280 A
IPI120N10S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Operating Temperature: 175 Cel; Terminal Finish: TIN;
770 mJ
.0039 ohm
300 pF
250 W
IPP120N10S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-609 Code: e3; JEDEC-95 Code: TO-220AB;
IPP70N12S311AKSA1
IPP70N12S311AKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 120V DS Breakdown Voltage and 280A IDM. Ideal for applications requiring high drain current handling, such as automotive power systems. Operating in enhancement mode, it offers low 0.0116 ohm RDS(ON) for efficient power management.
.0116 ohm
IPD50N12S3L15ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JEDEC-95 Code: TO-252; Terminal Finish: TIN;
.02 ohm
TO-252
IPD70N12S3L12ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0152 ohm
BSP179H6327XTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Minimum DS Breakdown Voltage: 400 V; Maximum Turn Off Time (toff): 127 ns;
400 V
.21 A
18 ohm
9 pF
R-PDSO-G4
DEPLETION MODE
1.8 W
.83 A
AEC-Q100; IEC-61249-2-21
127 ns
22.3 ns
IPI120N08S404AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 179 W; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel;
310 mJ
.0044 ohm
179 W
IPA80R750P7XKSA1
Infineon's IPA80R750P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 17A IDM and 0.75 ohm RDS(on), operating in enhancement mode. The transistor has a rectangular package shape, through-hole terminals, and an isolated case connection.
16 mJ
ISOLATED
.75 ohm
IPD60R280P7ATMA1
IPD60R280P7ATMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 0.28 ohm RDS(on), and 36A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
38 mJ
.28 ohm
36 A
IPP039N10N5AKSA1
IPP039N10N5AKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0039 ohm Drain-Source On Resistance, and 400A Pulsed Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE.
196 mJ
IPP60R080P7XKSA1
IPP60R080P7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage and 0.08 ohm max RDS(on). Ideal for switching applications, it has 110A IDM, 118mJ EAS, and operates in enhancement mode. The transistor features a single configuration with built-in diode, metal-oxide semiconductor technology, and silicon element material.
118 mJ
.08 ohm
110 A
IPA60R460CEXKSA1
IPA60R460CEXKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 26A and 0.46 ohm RDS(on). The transistor operates in enhancement mode and features a built-in diode, making it suitable for high-power circuits.
185 mJ
.46 ohm
-40 Cel
26 A
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