Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BF1005S-E6327
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .025 A; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
SINGLE
.025 A
METAL-OXIDE SEMICONDUCTOR
1
DUAL GATE, ENHANCEMENT MODE
150 Cel
260
N-CHANNEL
.2 W
FET General Purpose Power
YES
BF1005SR-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Drain Current (ID): .025 A;
BF5020-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .025 A;
DEPLETION MODE
BF5020R-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .025 A; Operating Mode: DEPLETION MODE;
BF5030-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
ENHANCEMENT MODE
BF5030R-E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
IPA50R380CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
210 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
500 V
.38 ohm
TO-220AB
R-PSFM-T3
e3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
30 A
Not Qualified
NO
TIN
THROUGH-HOLE
SWITCHING
SILICON
IPD60R1K4C6
IPD60R1K4C6 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, suitable for switching applications. It features a single configuration with built-in diode, 8A max pulsed drain current, and 1.4 ohm max RDS(on). This MOSFET operates in enhancement mode at up to 150°C, making it ideal for high-power applications.
26 mJ
DRAIN
600 V
3.2 A
1.4 ohm
TO-252
R-PSSO-G2
2
SMALL OUTLINE
28.4 W
8 A
GULL WING
IPD60R3K3C6
IPD60R3K3C6 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 4A and an operating temperature of up to 150°C. With a built-in diode, this MOSFET has a low on-resistance of 3.3 ohm and can handle up to 18.1W power dissipation in a small outline package.
6 mJ
1.7 A
3.3 ohm
18.1 W
4 A
IPU60R1K4C6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 8 A; Avalanche Energy Rating (EAS): 26 mJ;
TO-251AA
R-PSIP-T3
IN-LINE
IPA50R280CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 231 mJ; JESD-30 Code: R-PSFM-T3;
231 mJ
.28 ohm
42.9 A
IPA50R500CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE;
129 mJ
.5 ohm
24 A
IPA50R950CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Finish: TIN; Transistor Element Material: SILICON;
68 mJ
.95 ohm
12.8 A
IPD320N20N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 136 A; Transistor Element Material: SILICON; JESD-609 Code: e3;
190 mJ
200 V
34 A
.032 ohm
TO-252AA
136 A
MATTE TIN
SPD07N20GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
AVALANCHE RATED
120 mJ
7 A
.4 ohm
28 A
IPD600N25N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 210 mJ; Transistor Application: SWITCHING; Terminal Form: GULL WING;
250 V
25 A
.06 ohm
100 A
IPW90R500C3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE; No. of Elements: 1;
388 mJ
900 V
11 A
TO-247AD
BUZ31H3046
Infineon BUZ31H3046 is a N-CHANNEL FET with 200V DS breakdown voltage and 58A IDM. Ideal for power applications, it features a built-in diode, 0.2 ohm RDS(on), and 200mJ EAS rating. Suitable for enhancement mode operation in various electronic systems.
200 mJ
14.5 A
.2 ohm
TO-262AA
58 A
IPA50R190CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
339 mJ
.19 ohm
63 A
IPA50R650CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 102 mJ; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-220AB;
102 mJ
6.1 A
.65 ohm
NOT SPECIFIED
19 A
IPA50R800CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: TIN; Terminal Position: SINGLE;
83 mJ
.8 ohm
15.5 A
SPB07N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 230 mJ; Terminal Position: SINGLE; Additional Features: AVALANCHE RATED;
230 mJ
7.3 A
.6 ohm
TO-263AB
21.9 A
SPB12N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY;
340 mJ
11.6 A
34.8 A
SPB16N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Terminal Form: GULL WING;
460 mJ
16 A
48 A
SPB04N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 13.5 A; Moisture Sensitivity Level (MSL): 1;
130 mJ
4.5 A
13.5 A
SPB11N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 11 A; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
22 A
SPB07N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified;
14.6 A
SPB20N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 40 A; Terminal Form: GULL WING; No. of Elements: 1;
690 mJ
20 A
40 A
SPB03N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.4 ohm; Maximum Pulsed Drain Current (IDM): 9.6 A; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED, HIGH VOLTAGE
100 mJ
9.6 A
SPB02N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Form: GULL WING; Transistor Application: SWITCHING;
50 mJ
1.8 A
3 ohm
5.4 A
SPB04N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; JEDEC-95 Code: TO-263AB;
SPB03N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 600 V;
5.7 A
SPB04N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-263AB; Terminal Finish: TIN;
9 A
SPB02N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 3.2 A;
BSO615NGHUMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
60 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
2.6 A
.15 ohm
R-PDSO-G8
8
10.4 A
DUAL
IPB60R520CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 17 A;
166 mJ
6.8 A
.52 ohm
17 A
IPB60R600CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 15 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3;
144 mJ
15 A
SPP15N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified; No. of Elements: 1;
650 V
45 A
SPA15N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 45 A; Maximum Drain Current (ID): 15 A;
SPU03N60S5BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: 1.4 ohm; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 5.7 A;
SPD02N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 50 mJ; Package Body Material: PLASTIC/EPOXY; Additional Features: AVALANCHE RATED;
SPD08N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 10; Maximum Pulsed Drain Current (IDM): 22.8 A;
7.6 A
22.8 A
10
SPD02N60C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPU02N60C3BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Terminal Position: SINGLE; Additional Features: AVALANCHE RATED;
SPD03N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
SPU02N60S5BKMA1
Infineon's SPU02N60S5BKMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for power applications. Featuring 3.2A IDM and 50mJ EAS, it operates in enhancement mode with 150°C max temp. Its single configuration with built-in diode and low 3ohm RDS(on) make it suitable for various power control circuits.
SPD04N60S5BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Additional Features: AVALANCHE RATED, HIGH VOLTAGE; Package Shape: RECTANGULAR;
SPU04N60S5BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-251AA; No. of Elements: 1;
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