Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
SPP11N60C3XKSA1
Infineon Technologies
SPP11N60C3XKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 33A IDM. Widely used in power applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 125W.
AVALANCHE RATED
340 mJ
SINGLE WITH BUILT-IN DIODE
600 V
11 A
.38 ohm
METAL-OXIDE SEMICONDUCTOR
30 pF
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
125 W
33 A
NO
TIN
THROUGH-HOLE
SINGLE
SILICON
79 ns
SPP11N60CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; Package Shape: RECTANGULAR; No. of Terminals: 3;
.44 ohm
FLANGE MOUNT
NOT SPECIFIED
28 A
SPP11N60S5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; Minimum DS Breakdown Voltage: 600 V; No. of Elements: 1;
DRAIN
22 A
SPP11N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3; Minimum DS Breakdown Voltage: 650 V;
650 V
SWITCHING
SPP12N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
500 V
11.6 A
34.8 A
SPP15N60CFDXKSA1
SPP15N60CFDXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max IDM of 33A and an EAS of 460mJ, making it ideal for SWITCHING applications. This SINGLE transistor with BUILT-IN DIODE operates in ENHANCEMENT MODE and has a 0.33 ohm Drain-Source On Resistance.
460 mJ
13.4 A
.33 ohm
SPP16N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; JEDEC-95 Code: TO-220AB; Additional Features: AVALANCHE RATED;
16 A
.28 ohm
48 A
SPP20N60CFDXKSA1
SPP20N60CFDXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features 52A IDM and 0.22 ohm RDS(on), suitable for power applications requiring high current handling and low on-resistance. Ideal for use in power supplies, motor control, and industrial equipment due to its robust design and high energy rating of 690mJ.
690 mJ
20.7 A
.22 ohm
52 A
SPP21N50C3XKSA1
SPP21N50C3XKSA1 by Infineon is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it has a max ID of 21A and 0.19 ohm RDS(on). This MOSFET operates in enhancement mode and can handle up to 63A pulsed drain current.
21 A
.19 ohm
63 A
BSP322PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Pulsed Drain Current (IDM): 4 A; Maximum Operating Temperature: 150 Cel;
57 mJ
100 V
1 A
.8 ohm
51 pF
R-PDSO-G4
4
P-CHANNEL
1.8 W
4 A
AEC-Q101
YES
GULL WING
DUAL
44.3 ns
13.4 ns
JANSR2N7584T1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Minimum Operating Temperature: -55 Cel; Operating Mode: ENHANCEMENT MODE;
344 mJ
ISOLATED
200 V
45 A
.029 ohm
TO-254AA
S-XSFM-P3
UNSPECIFIED
SQUARE
208 W
180 A
Qualified
MIL-19500; RH - 100K Rad(Si)
PIN/PEG
115 ns
165 ns
BSB104N08NP3GXUSA1
Infineon BSB104N08NP3GXUSA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 0.0104 ohm RDS(on), and 110mJ EAS rating. Suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology in CHIP CARRIER package style.
110 mJ
80 V
13 A
.0104 ohm
R-MBCC-N3
e4
METAL
CHIP CARRIER
200 A
Silver/Nickel (Ag/Ni)
NO LEAD
BOTTOM
BSC079N03LSCGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Drain-Source On Resistance: .0127 ohm;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
10 mJ
30 V
14 A
.0127 ohm
R-PDSO-F8
8
FLAT
BSC883N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
40 mJ
34 V
19 A
.0046 ohm
392 A
BSC889N03LSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.009 ohm
BSC889N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; No. of Elements: 1; Maximum Drain Current (ID): 12 A;
12 A
.0091 ohm
R-PDSO-N8
176 A
BSL302SNH6327XTSA1
Infineon Technologies' BSL302SNH6327XTSA1 is a N-CHANNEL Power FET with a min DS Breakdown Voltage of 30V. It has a max Pulsed Drain Current of 28A and an Avalanche Energy Rating of 30mJ. This FET is commonly used in applications requiring high power and efficient switching capabilities.
30 mJ
7.1 A
.025 ohm
R-PDSO-G6
6
BSO201SPNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 8;
248 mJ
20 V
14.9 A
.008 ohm
R-PDSO-G8
59.6 A
BSO203PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
97 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
8.2 A
.021 ohm
2
32.8 A
BSO203SPNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Pulsed Drain Current (IDM): 36 A;
9 A
36 A
BSO204PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8; Terminal Form: GULL WING;
63 mJ
7 A
.03 ohm
BSO207PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 44 mJ; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
44 mJ
5.7 A
.045 ohm
22.8 A
BSO211PNTMA1
Infineon's BSO211PNTMA1 is a P-CHANNEL FET with 2 elements, built-in diode, and 20V DS breakdown voltage. Ideal for switching applications, it offers 18.8A max pulsed drain current and 0.067 ohm max on-resistance. This MOSFET in gull wing package is designed for enhancement mode operation in small outline form factor.
28 mJ
4.7 A
.067 ohm
18.8 A
BSO301SPNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Terminal Form: GULL WING; No. of Elements: 1;
60 A
BSO303PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE;
32.4 A
BSO303SPNTMA1
Infineon's BSO303SPNTMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 35.6A IDM, 0.021 ohm RDS(on), and 97mJ EAS rating. With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
8.9 A
35.6 A
IPA028N08N3GXKSA1
Infineon's IPA028N08N3GXKSA1 is a N-CHANNEL FET with 80V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 352A and 0.0028 ohm RDS(on), it operates in enhancement mode. The transistor, made of silicon MOSFET technology, comes in a rectangular package with through-hole terminals.
1430 mJ
89 A
.0028 ohm
352 A
IPA65R045C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR; JESD-609 Code: e3;
249 mJ
18 A
212 A
IPA65R065C7XKSA1
Infineon's IPA65R065C7XKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 145A IDM, 171mJ EAS, and 0.065 ohm RDS(ON). Package style is FLANGE MOUNT with TIN finish, suitable for ENHANCEMENT MODE operation.
171 mJ
.065 ohm
145 A
IPA65R125C7XKSA1
Infineon's IPA65R125C7XKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 75A IDM, 89mJ EAS, and 0.125 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.
89 mJ
10 A
.125 ohm
75 A
IPA65R225C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
48 mJ
.225 ohm
41 A
IPB65R125C7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 101 W; Maximum Drain Current (ID): 18 A; JEDEC-95 Code: TO-263AB;
TO-263AB
R-PSSO-G2
101 W
IPD060N03LGBTMA1
Infineon's IPD060N03LGBTMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.009 ohm RDS(ON), and 50A ID. Ideal for SWITCHING applications, it features a built-in diode, 350A IDM, and 60mJ EAS rating. The PLASTIC/EPOXY package with GULL WING terminals supports ENHANCEMENT MODE operation in a RECTANGULAR shape.
60 mJ
50 A
TO-252
350 A
IPD60R450E6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 185 mJ; Transistor Application: SWITCHING; No. of Terminals: 2;
185 mJ
.45 ohm
26 A
IPD60R520C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 22 A; Minimum DS Breakdown Voltage: 600 V;
153 mJ
8.1 A
.52 ohm
IPD60R600E6ATMA1
IPD60R600E6ATMA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 19A IDM, 133mJ EAS, and 0.6 ohm RDS(ON). Package: PLASTIC/EPOXY, GULL WING terminals, ENHANCEMENT MODE operation.
133 mJ
.6 ohm
IPD65R380C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 215 mJ;
215 mJ
10.6 A
29 A
IPD65R950C6ATMA1
IPD65R950C6ATMA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, 0.95 ohm RDS(on), and 12A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
50 mJ
.95 ohm
IPD65R950CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.7 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 650 V;
3.9 A
36.7 W
IPI028N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 400 A; No. of Terminals: 3; Minimum DS Breakdown Voltage: 80 V;
100 A
TO-262AA
R-PSIP-T3
IN-LINE
400 A
IPI037N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE
165 mJ
60 V
90 A
.0037 ohm
175 Cel
167 W
360 A
FET General Purpose Power
IPI100N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 90 mJ; JESD-30 Code: R-PSIP-T3;
90 mJ
70 A
.01 ohm
280 A
IPI139N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; JESD-30 Code: R-PSIP-T3; Operating Mode: ENHANCEMENT MODE;
.0139 ohm
IPI50CN10NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
29 mJ
20 A
.05 ohm
80 A
IPL65R165CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 195 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): 2A;
614 mJ
21.3 A
.165 ohm
S-PSSO-N4
2A
-40 Cel
195 W
67 A
Tin (Sn)
IPL65R190E6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 2A;
485 mJ
66 A
IPL65R210CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 151 W; Avalanche Energy Rating (EAS): 484 mJ; JESD-609 Code: e3;
484 mJ
16.6 A
.21 ohm
151 W
53 A
IPL65R310E6AUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: SQUARE;
290 mJ
.31 ohm
© 2023 All rights reserved
