Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB09N03LAG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 50 A;
LOGIC LEVEL COMPATIBLE
75 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
25 V
50 A
.0151 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e3
3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
63 W
350 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
SWITCHING
SILICON
IPB100N06S3-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
AVALANCHE RATED
2390 mJ
55 V
100 A
.003 ohm
245
300 W
400 A
IPB100N06S3L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 55 V; Operating Mode: ENHANCEMENT MODE;
690 mJ
.0043 ohm
TO-263
IPB14N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 25 V;
60 mJ
30 A
.0136 ohm
46 W
210 A
IPB25N06S3-25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Avalanche Energy Rating (EAS): 60 mJ; JESD-30 Code: R-PSSO-G2;
25 A
.0251 ohm
48 W
IPB80N06S3L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Additional Features: LOGIC LEVEL COMPATIBLE; Package Body Material: PLASTIC/EPOXY;
250 mJ
80 A
.0056 ohm
136 W
320 A
IPDH6N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 350 A;
150 mJ
.006 ohm
TO-252AA
260
71 W
IPFH6N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Maximum Drain Current (ID): 50 A; Additional Features: LOGIC LEVEL COMPATIBLE;
.0062 ohm
TO-252
R-PSSO-G3
IPI25N06S3-25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Transistor Application: SWITCHING; No. of Elements: 1;
TO-262AA
R-PSIP-T3
IN-LINE
NO
THROUGH-HOLE
IPI25N06S3L-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 55 V; Package Shape: RECTANGULAR;
120 mJ
.0216 ohm
50 W
IPP100N06S3-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Terminal Form: THROUGH-HOLE;
.0033 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
IPP100N06S3L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
.0046 ohm
IPP25N06S3L-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
IPP80N06S3L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Avalanche Energy Rating (EAS): 250 mJ; Maximum Operating Temperature: 175 Cel;
.0059 ohm
IPU06N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
160 mJ
30 V
.0063 ohm
TO-251
94 W
200 A
IPU09N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; No. of Elements: 1; Terminal Position: SINGLE;
57 mJ
.0144 ohm
TO-251AA
58 W
BSC027N03SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
800 mJ
.0039 ohm
R-PDSO-F8
8
150 Cel
89 W
FLAT
DUAL
IPB77N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Drain Current (ID): 77 A; No. of Elements: 1;
170 mJ
77 A
.0088 ohm
107 W
308 A
IPI80N06S3L-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Avalanche Energy Rating (EAS): 170 mJ; Qualification: Not Qualified;
.0079 ohm
105 W
IPP77N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Maximum Drain Current (ID): 77 A; Avalanche Energy Rating (EAS): 170 mJ;
.0091 ohm
IPP80N06S3L-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;
SPS02N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Pulsed Drain Current (IDM): 5.4 A; Package Shape: RECTANGULAR;
50 mJ
600 V
1.8 A
3 ohm
25 W
5.4 A
BSB017N03LX3G
Infineon's BSB017N03LX3G is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 225mJ EAS, and 0.0017 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 57W and operates b/w -40 to 150 °C.
225 mJ
147 A
.0017 ohm
R-MBCC-N3
-40 Cel
METAL
CHIP CARRIER
57 W
NO LEAD
BOTTOM
BSC091N03MSCG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V;
10 mJ
12 A
176 A
BSC119N03MSCG
BSC119N03MSCG by Infineon Technologies is a N-CHANNEL Power FET with 30V DS Breakdown Voltage. It features a max IDM of 156A and 0.0119 ohm Drain-Source On Resistance, suitable for SWITCHING applications. This MOSFET operates in ENHANCEMENT MODE, with an EAS of 10mJ and can handle up to 11A Drain Current at a max temp of 150°C.
11 A
.0119 ohm
156 A
IPP065N04NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 50 A;
40 V
.0065 ohm
NOT SPECIFIED
68 W
BUZ32H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB;
200 V
9.5 A
.4 ohm
75 W
38 A
IPD60R950C6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;
46 mJ
4.4 A
.95 ohm
37 W
TIN
IPU103N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE;
90 mJ
80 V
.0103 ohm
100 W
IPU135N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; JESD-30 Code: R-PSIP-T3; Maximum Drain Current (ID): 50 A;
40 mJ
.0135 ohm
79 W
IPB06N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Minimum DS Breakdown Voltage: 25 V; Maximum Drain-Source On Resistance: .0095 ohm;
.0095 ohm
83 W
BSC037N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Terminal Position: DUAL; JESD-609 Code: e3;
350 mJ
21 A
69 W
BSC106N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; No. of Terminals: 8; Package Style (Meter): SMALL OUTLINE;
80 mJ
13 A
.0106 ohm
43 W
120 A
IPB085N06LG
Infineon Technologies' IPB085N06LG is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 60V, max pulsed drain current of 320A, and max power dissipation of 188W. This transistor is commonly used for switching applications in various industries.
370 mJ
60 V
.0082 ohm
188 W
IPB110N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
280 mJ
78 A
.011 ohm
158 W
312 A
IPB120N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Avalanche Energy Rating (EAS): 280 mJ; No. of Terminals: 2;
75 A
.0117 ohm
300 A
IPD64CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Operating Temperature: 175 Cel; Transistor Application: SWITCHING;
34 mJ
100 V
17 A
.064 ohm
44 W
68 A
IPP070N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 320 A;
450 mJ
.007 ohm
214 W
IPU64CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 44 W; Package Style (Meter): IN-LINE; Minimum DS Breakdown Voltage: 100 V;
IPB051NE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;
826 mJ
85 V
.0051 ohm
IPB05CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .0051 ohm; Maximum Pulsed Drain Current (IDM): 400 A;
IPB065N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Qualification: Not Qualified; JESD-609 Code: e3;
530 mJ
250 W
IPB08CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain-Source On Resistance: .0082 ohm;
262 mJ
95 A
167 W
380 A
IPB08CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Avalanche Energy Rating (EAS): 262 mJ; Maximum Drain Current (Abs) (ID): 95 A;
IPB12CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
FAST SWITCHING
154 mJ
67 A
.0126 ohm
125 W
268 A
IPB12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE;
.0129 ohm
IPB16CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Peak Reflow Temperature (C): 245; Maximum Pulsed Drain Current (IDM): 212 A;
107 mJ
53 A
.0165 ohm
212 A
IPD12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .0124 ohm; Maximum Drain Current (Abs) (ID): 67 A;
.0124 ohm
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