Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
BSL207SP
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 44 mJ; Maximum Pulsed Drain Current (IDM): 24 A; Maximum Drain Current (ID): 6 A;
AVALANCHE RATED
44 mJ
SINGLE WITH BUILT-IN DIODE
20 V
6 A
.041 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G6
e3
1
6
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
2 W
24 A
Not Qualified
AEC-Q101
YES
TIN
GULL WING
DUAL
SWITCHING
SILICON
BSL211SP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
26 mJ
4.7 A
.067 ohm
18.8 A
Other Transistors
SPB80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; No. of Terminals: 2;
700 mJ
DRAIN
55 V
80 A
.0065 ohm
TO-263AB
R-PSSO-G2
e0
2
175 Cel
N-CHANNEL
300 W
320 A
FET General Purpose Power
TIN LEAD
SINGLE
SPP80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
NO
MATTE TIN
THROUGH-HOLE
SPB10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
60 mJ
100 V
10.3 A
.17 ohm
220
50 W
41.2 A
SPB21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Avalanche Energy Rating (EAS): 130 mJ;
130 mJ
21 A
.08 ohm
90 W
84 A
SPD100N03S2L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: MATTE TIN;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
325 mJ
30 V
100 A
.0063 ohm
TO-252
R-PSSO-G4
4
150 W
400 A
SPD11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .17 ohm;
10.5 A
260
SPD35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
245 mJ
35 A
.044 ohm
140 A
SPI10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; No. of Terminals: 3; Terminal Position: SINGLE;
65 pF
TO-262AA
R-PSIP-T3
IN-LINE
79 ns
81 ns
SPI80N03S2L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: MATTE TIN;
380 mJ
188 W
SPP10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Feedback Capacitance (Crss): 65 pF; Operating Mode: ENHANCEMENT MODE;
SPP21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain Current (Abs) (ID): 21 A;
SPU11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;
TO-251
SPB35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 2; No. of Elements: 1;
SPD22N08S2L-50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Operating Temperature: 175 Cel; Case Connection: DRAIN;
94 mJ
75 V
22 A
18 A
.065 ohm
58 W
SPI42N03S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 64 W; Package Style (Meter): IN-LINE; Terminal Position: SINGLE;
110 mJ
42 A
.0199 ohm
64 W
248 A
SPP35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 35 A; Terminal Finish: MATTE TIN;
IPB05N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Minimum DS Breakdown Voltage: 25 V; Transistor Application: SWITCHING;
LOGIC LEVEL COMPATIBLE
190 mJ
25 V
.0078 ohm
94 W
385 A
IPB06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Peak Reflow Temperature (C): 220; Terminal Finish: TIN LEAD;
225 mJ
91 A
50 A
.0095 ohm
83 W
350 A
IPB14N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Minimum DS Breakdown Voltage: 25 V; Terminal Finish: TIN LEAD;
30 A
.0136 ohm
46 W
210 A
IPI06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
.0099 ohm
IPI09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Drain-Source On Resistance: .0155 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
75 mJ
65 A
.0155 ohm
63 W
IPP05N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 80 A; Maximum Drain Current (ID): 80 A;
.0081 ohm
IPP06N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; No. of Elements: 1; Package Shape: RECTANGULAR;
IPP09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP14N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;
.0139 ohm
IPU07N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Maximum Pulsed Drain Current (IDM): 210 A; Terminal Form: THROUGH-HOLE;
375 mJ
.0101 ohm
TO-251AA
SPP15P10P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 128 W; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 60 A;
230 mJ
15 A
.24 ohm
NOT SPECIFIED
128 W
60 A
IPB03N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 960 mJ; No. of Terminals: 2;
960 mJ
.0041 ohm
IPB04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
290 mJ
.0064 ohm
107 W
IPB09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 50 A;
.0151 ohm
IPI04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 385 A;
.0067 ohm
IPP03N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 3; Transistor Element Material: SILICON;
.0044 ohm
IPP04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
SPB80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Terminal Form: GULL WING; Maximum Drain Current (ID): 80 A;
.024 ohm
250 W
SPI80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 3; Maximum Operating Temperature: 175 Cel;
SPP80N10L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
SPU30N03S2L-10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 82 W; Maximum Operating Temperature: 175 Cel; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
150 mJ
.0146 ohm
82 W
120 A
IPF09N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 75 mJ;
.0148 ohm
R-PSSO-G3
SPD02N50C3
Infineon's SPD02N50C3 is a N-CHANNEL FET with 500V DS Breakdown Voltage, 5.4A IDM, and 25W Power Dissipation. Ideal for power applications requiring high voltage tolerance and current handling capabilities in compact designs.
50 mJ
500 V
1.8 A
3 ohm
TO-252AA
25 W
5.4 A
SPN01N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
600 V
.3 A
6 ohm
R-PDSO-G4
1.8 W
1.6 A
IPB097N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Drain Current (Abs) (ID): 70 A; Terminal Finish: MATTE TIN;
90 mJ
80 V
70 A
.0097 ohm
245
100 W
280 A
BSC022N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; No. of Terminals: 8; Transistor Element Material: SILICON;
800 mJ
28 A
.0033 ohm
R-PDSO-N8
8
235
104 W
200 A
NO LEAD
BSC032N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Avalanche Energy Rating (EAS): 550 mJ; Terminal Finish: TIN LEAD;
550 mJ
23 A
.0049 ohm
78 W
SPI08N80C3
Infineon's SPI08N80C3 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 150°C, making it suitable for high-power circuits.
AVALANCHE RATED, HIGH VOLTAGE
340 mJ
800 V
8 A
.65 ohm
SPN03N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JEDEC-95 Code: TO-261AA; Package Style (Meter): SMALL OUTLINE;
.7 A
1.4 ohm
TO-261AA
255
3 A
IPI032N06N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Drain Current (Abs) (ID): 120 A; Package Style (Meter): IN-LINE;
235 mJ
60 V
.0032 ohm
480 A
© 2023 All rights reserved
