Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SN7002NE6433
Infineon Technologies
Infineon's SN7002NE6433 is a N-CHANNEL FET with 0.2A max drain current and 0.36W power dissipation in single configuration. Ideal for applications requiring enhancement mode operation, such as power management systems or battery protection circuits.
SINGLE
.2 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
260
N-CHANNEL
.36 W
FET General Purpose Power
YES
SN7002WE6433
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .23 A;
.23 A
.5 W
SN7002WE6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): .23 A;
BSS169E6906
BSS169E6906 by Infineon is a N-CHANNEL FET with 0.17A max drain current and 0.36W power dissipation in depletion mode. Ideal for applications requiring high temperature resistance up to 150°C, such as power management systems and battery protection circuits.
.17 A
DEPLETION MODE
SPB21N10G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 21 A;
21 A
175 Cel
90 W
IPB79CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31 W; JESD-30 Code: R-PSSO-G2; Terminal Finish: MATTE TIN;
17 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
13 A
.079 ohm
TO-263AB
R-PSSO-G2
e3
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
245
31 W
52 A
Not Qualified
MATTE TIN
GULL WING
SWITCHING
SILICON
BSP129L6327
BSP129L6327 by Infineon Technologies is a N-CHANNEL Power FET with PLASTIC/EPOXY package. It has a Min DS Breakdown Voltage of 240V and Max Drain Current of 0.35A, making it suitable for applications requiring high power dissipation in small outline packages. Ideal for depletion mode operation at up to 150°C, this FET offers low drain-source resistance of 6 ohm for efficient performance.
240 V
.35 A
6 ohm
R-PDSO-G4
4
1.8 W
1.4 A
DUAL
BTS282ZE-3180A
BTS282ZE-3180A by Infineon is a N-channel Power FET with 49V DS breakdown voltage and 320A IDM. It features a built-in diode, temp sensor, and 0.0095 ohm RDS(on), suitable for switching applications. With a max operating temp of 175°C, it's ideal for high-power systems requiring efficient performance.
LOGIC LEVEL COMPATIBLE
2000 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
49 V
80 A
.0095 ohm
R-PSSO-G7
7
320 A
TIN
BTS282ZE-3230
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
R-PSFM-T7
FLANGE MOUNT
NO
THROUGH-HOLE
IPI100P03P3L-04
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (Abs) (ID): 100 A; Terminal Finish: MATTE TIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
450 mJ
30 V
100 A
.0043 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
P-CHANNEL
200 W
400 A
Other Transistors
IPP04CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Terminal Finish: TIN;
1000 mJ
.0042 ohm
TO-220AB
R-PSFM-T3
300 W
IPP05CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 100 A; JEDEC-95 Code: TO-220AB;
826 mJ
.0051 ohm
IPP06CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 400 A;
480 mJ
.0062 ohm
214 W
IPP08CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; No. of Elements: 1; Additional Features: LOGIC LEVEL COMPATIBLE;
254 mJ
98 A
.008 ohm
167 W
392 A
IPP100P03P3L-04
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSFM-T3;
IPW60R250CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Drain-Source On Resistance: .25 ohm; Package Style (Meter): FLANGE MOUNT;
345 mJ
600 V
12 A
.25 ohm
TO-247
104 W
40 A
BSB019N03LXG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 30 V;
AVALANCHE RATED
290 mJ
174 A
31 A
.0019 ohm
R-MBCC-N3
METAL
CHIP CARRIER
89 W
NO LEAD
BOTTOM
BUZ31LH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 95 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;
200 mJ
200 V
13.5 A
.2 ohm
NOT SPECIFIED
95 W
54 A
BUZ73AH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
120 mJ
5.5 A
.6 ohm
40 W
22 A
IPI023NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; No. of Elements: 1;
1100 mJ
75 V
120 A
.0023 ohm
480 A
IPI034NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
640 mJ
.0034 ohm
IPI052NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
370 mJ
.0052 ohm
150 W
IPD60R600E6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Transistor Element Material: SILICON; Terminal Position: SINGLE;
133 mJ
7.3 A
TO-252
63 W
19 A
BSC205N10LSG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 76 W; Terminal Finish: MATTE TIN; Maximum Drain Current (Abs) (ID): 45 A;
60 mJ
45 A
7.4 A
.0205 ohm
R-PDSO-F8
8
76 W
180 A
FLAT
IPB136N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 80 V;
50 mJ
80 V
.0136 ohm
79 W
IPG15N06S3L-45
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 21 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
47 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
55 V
15 A
17 A
.045 ohm
21 W
60 A
IPG20N06S3L-23
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
110 mJ
20 A
33 A
.023 ohm
45 W
IPG20N06S3L-35
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 2; Qualification: Not Qualified;
55 mJ
.035 ohm
IPI070N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 80 V;
150 mJ
.0067 ohm
136 W
IPP070N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 80 V; Avalanche Energy Rating (EAS): 150 mJ;
.007 ohm
BG3230E6327
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .025 A;
.025 A
.2 W
IPD20N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOGIC LEVEL COMPATIBLE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
15 mJ
30 A
.031 ohm
BSC240N12NS3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; No. of Terminals: 8; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
120 V
37 A
.024 ohm
R-PDSO-N8
66 W
148 A
SPB100N03S2-03G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Peak Reflow Temperature (C): 245; Operating Mode: ENHANCEMENT MODE;
810 mJ
.003 ohm
SPB10N10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V; Package Body Material: PLASTIC/EPOXY;
10.3 A
.21 ohm
42.2 A
IPI200N15N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
170 mJ
150 V
50 A
.02 ohm
200 A
SPB80P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 340 W; JESD-30 Code: R-PSSO-G2; No. of Elements: 1;
824 mJ
60 V
e0
220
340 W
TIN LEAD
SPN04N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 600 V;
.8 A
.95 ohm
TO-261AA
3 A
BSO4410
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 11.1 A; Transistor Element Material: SILICON;
126 mJ
11.1 A
.013 ohm
R-PDSO-G8
2.5 W
44.5 A
BSO4420
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
230 mJ
.0078 ohm
BSO4804
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
90 mJ
8 A
2 W
32 A
BSO4822
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
165 mJ
12.7 A
.01 ohm
51 A
BSP615S2L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
2.8 A
.15 ohm
11 A
IPD20N03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Operating Temperature: 175 Cel; Minimum DS Breakdown Voltage: 30 V;
TO-252AA
255
42 W
SPB100N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
SPB100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Operating Temperature: 175 Cel;
SPB42N03S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
42 A
.0196 ohm
64 W
248 A
SPB77N06S2-12
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain-Source On Resistance: .012 ohm; Minimum DS Breakdown Voltage: 55 V;
280 mJ
77 A
.012 ohm
140 W
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