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Infineon Technologies Power Field Effect Transistors (FET) 1,625

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPI90R800C3 by Infineon Technologies

IPI90R800C3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; JEDEC-95 Code: TO-262AA; JESD-30 Code: R-PSIP-T3;

157 mJ

SINGLE WITH BUILT-IN DIODE

900 V

6.9 A

6.9 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

104 W

15 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

BSF045N03MQ3G by Infineon Technologies

BSF045N03MQ3G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

63 A

18 A

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N2

1

2

ENHANCEMENT MODE

150 Cel

METAL

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

28 W

252 A

Not Qualified

FET General Purpose Power

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

IPD05N03LAG by Infineon Technologies

IPD05N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: MATTE TIN; No. of Terminals: 2;

LOGIC LEVEL COMPATIBLE

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0084 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

SPD50N03S2-07G by Infineon Technologies

SPD50N03S2-07G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;

AVALANCHE RATED

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0073 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

136 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SILICON

BSC079N03SG by Infineon Technologies

BSC079N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Elements: 1;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

40 A

14.6 A

.0116 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

60 W

160 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC094N03SG by Infineon Technologies

BSC094N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Avalanche Energy Rating (EAS): 90 mJ; Moisture Sensitivity Level (MSL): 3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

90 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

35 A

14.6 A

.0094 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

140 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC119N03SG by Infineon Technologies

BSC119N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; JESD-30 Code: R-PDSO-F8; Maximum Pulsed Drain Current (IDM): 120 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

11.9 A

.0119 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

43 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

IPB11N03LA by Infineon Technologies

IPB11N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Drain Current (Abs) (ID): 30 A; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0112 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD03N03LBG by Infineon Technologies

IPD03N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

90 A

90 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

360 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD05N03LBG by Infineon Technologies

IPD05N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;

LOGIC LEVEL COMPATIBLE

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

90 A

90 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

94 W

420 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD06N03LBG by Infineon Technologies

IPD06N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Pulsed Drain Current (IDM): 200 A; Maximum Operating Temperature: 175 Cel;

LOGIC LEVEL COMPATIBLE

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0061 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD09N03LBG by Infineon Technologies

IPD09N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Drain Current (Abs) (ID): 50 A; JESD-30 Code: R-PSSO-G2;

LOGIC LEVEL COMPATIBLE

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0142 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

58 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD10N03LAG by Infineon Technologies

IPD10N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 30 A;

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0104 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD10N03LA by Infineon Technologies

IPD10N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 1;

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0104 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SILICON

IPD12N03LBG by Infineon Technologies

IPD12N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

64 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0116 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPF10N03LAG by Infineon Technologies

IPF10N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Package Shape: RECTANGULAR; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

80 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0104 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP11N03LA by Infineon Technologies

IPP11N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Maximum Drain-Source On Resistance: .0115 ohm; JESD-609 Code: e3;

LOGIC LEVEL COMPATIBLE

80 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SPI80N06S-08 by Infineon Technologies

SPI80N06S-08

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .008 ohm; Transistor Element Material: SILICON;

700 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

300 W

320 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

SPP10N10L by Infineon Technologies

SPP10N10L

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .21 ohm;

AVALANCHE RATED

60 mJ

SINGLE WITH BUILT-IN DIODE

100 V

10.3 A

10.3 A

.21 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

50 W

42.2 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPD13N03LAG by Infineon Technologies

IPD13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; JESD-30 Code: R-PSSO-G2; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPF06N03LAG by Infineon Technologies

IPF06N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;

LOGIC LEVEL COMPATIBLE

225 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0094 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPF13N03LAG by Infineon Technologies

IPF13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Peak Reflow Temperature (C): 260; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPS06N03LAG by Infineon Technologies

IPS06N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 225 mJ; Operating Mode: ENHANCEMENT MODE;

LOGIC LEVEL COMPATIBLE

225 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0096 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

83 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPS13N03LAG by Infineon Technologies

IPS13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Package Style (Meter): IN-LINE; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU13N03LAG by Infineon Technologies

IPU13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPD04N03LAG by Infineon Technologies

IPD04N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Qualification: Not Qualified; Moisture Sensitivity Level (MSL): 3;

LOGIC LEVEL COMPATIBLE

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

115 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD09N03LAG by Infineon Technologies

IPD09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0148 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPF09N03LAG by Infineon Technologies

IPF09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 3;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0148 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPS04N03LAG by Infineon Technologies

IPS04N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;

LOGIC LEVEL COMPATIBLE

600 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

115 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPS09N03LAG by Infineon Technologies

IPS09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU09N03LAG by Infineon Technologies

IPU09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; JESD-609 Code: e3; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSC052N03SG by Infineon Technologies

BSC052N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

168 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

18 A

.0082 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

54 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC059N03SG by Infineon Technologies

BSC059N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Finish: MATTE TIN; Terminal Position: DUAL;

LOGIC LEVEL COMPATIBLE

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

73 A

17.5 A

.0086 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

48 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC022N03SG by Infineon Technologies

BSC022N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

28 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

104 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

IPB03N03LB by Infineon Technologies

IPB03N03LB

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Case Connection: DRAIN; Maximum Operating Temperature: 175 Cel;

LOGIC LEVEL COMPATIBLE

580 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0039 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

150 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB04N03LB by Infineon Technologies

IPB04N03LB

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

270 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0051 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

107 W

320 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

SWITCHING

SILICON

IPB05N03LB by Infineon Technologies

IPB05N03LB

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

136 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

94 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB06N03LB by Infineon Technologies

IPB06N03LB

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

164 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0063 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

83 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB10N03LB by Infineon Technologies

IPB10N03LB

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Avalanche Energy Rating (EAS): 57 mJ; Terminal Form: GULL WING;

LOGIC LEVEL COMPATIBLE

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0096 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

58 W

200 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

SWITCHING

SILICON

IPP03N03LBG by Infineon Technologies

IPP03N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 580 mJ; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

580 mJ

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0042 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP04N03LBG by Infineon Technologies

IPP04N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Terminal Position: SINGLE; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

270 mJ

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0054 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

107 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP05N03LBG by Infineon Technologies

IPP05N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Avalanche Energy Rating (EAS): 136 mJ; Minimum DS Breakdown Voltage: 30 V;

LOGIC LEVEL COMPATIBLE

136 mJ

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP07N03LBG by Infineon Technologies

IPP07N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

164 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0066 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

94 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP10N03LBG by Infineon Technologies

IPP10N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Pulsed Drain Current (IDM): 200 A; Terminal Form: THROUGH-HOLE;

LOGIC LEVEL COMPATIBLE

57 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0099 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

58 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP13N03LBG by Infineon Technologies

IPP13N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain Current (Abs) (ID): 30 A;

LOGIC LEVEL COMPATIBLE

64 mJ

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

52 W

120 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSC032N03SG by Infineon Technologies

BSC032N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Maximum Drain-Source On Resistance: .0049 ohm; Maximum Drain Current (ID): 23 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

550 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

23 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

78 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC042N03SG by Infineon Technologies

BSC042N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PDSO-F8; Maximum Drain Current (ID): 20 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

95 A

20 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62.5 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC020N025SG by Infineon Technologies

BSC020N025SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Moisture Sensitivity Level (MSL): 3; Package Style (Meter): SMALL OUTLINE;

AVALANCHE RATED

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

100 A

29 A

.0031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

104 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON