Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPP60R600P6XKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 18 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
133 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
.6 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
18 A
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IPP65R045C7XKSA1
IPP65R045C7XKSA1 by Infineon Technologies is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max IDM of 212A and 0.045 ohm Drain-Source On Resistance. The transistor features a SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
249 mJ
650 V
46 A
.045 ohm
212 A
IPP90R1K0C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3;
97 mJ
900 V
5.7 A
1 ohm
12 A
IPW60R190P6FKSA1
IPW60R190P6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 0.19 ohm RDS(on), and 57A IDM. Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor's metal-oxide semiconductor technology ensures high performance in power electronics.
419 mJ
.19 ohm
TO-247
57 A
IPW65R019C7FKSA1
IPW65R019C7FKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 496A and 0.019 ohm RDS(on), making it ideal for SWITCHING applications. The transistor's METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE operation ensure efficient performance in various power electronics systems.
583 mJ
75 A
.019 ohm
496 A
IPZ65R045C7XKSA1
IPZ65R045C7XKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 212A and 0.045 ohm RDS(on), suitable for SWITCHING applications. The transistor has a SILICON element, operates in ENHANCEMENT MODE, and comes in a RECTANGULAR package with THROUGH-HOLE terminals.
R-PSFM-T4
4
SPD30N03S2L07GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 250 mJ; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED
250 mJ
30 V
30 A
.0098 ohm
TO-252
R-PSSO-G2
2
SMALL OUTLINE
120 A
YES
GULL WING
SPD30N03S2L10GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-252; Terminal Finish: TIN;
150 mJ
.0146 ohm
SPD30N03S2L20GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
70 mJ
.031 ohm
SPD50N03S207GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
50 A
.0073 ohm
TO-252AA
200 A
SPD50N03S2L06GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 250 mJ; Package Body Material: PLASTIC/EPOXY;
.0092 ohm
SPI07N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 21.9 A; Avalanche Energy Rating (EAS): 230 mJ;
230 mJ
7.3 A
.0006 ohm
TO-262AA
R-PSIP-T3
IN-LINE
21.9 A
BSF035NE2LQXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 22 A; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 25 V;
50 mJ
25 V
22 A
.0046 ohm
R-MBCC-N3
e4
METAL
CHIP CARRIER
276 A
SILVER NICKEL
NO LEAD
BOTTOM
IPL65R340CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104.2 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
290 mJ
10.9 A
.34 ohm
S-PSSO-N4
2A
150 Cel
-40 Cel
SQUARE
104.2 W
32 A
BSO612CVGHUMA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
47 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
3 A
.12 ohm
R-PDSO-G8
8
N-CHANNEL AND P-CHANNEL
AEC-Q101
NICKEL PALLADIUM GOLD SILVER
DUAL
DDB2U50N08W1RB23BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; No. of Elements: 1; No. of Terminals: 9;
ISOLATED
COMPLEX
60 A
.2 ohm
R-XUFM-X9
9
UNSPECIFIED
NOT SPECIFIED
100 A
UPPER
IPD30N03S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
ULTRA LOW RESISTANCE
IPB80N06S207ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Reference Standard: AEC-Q101;
530 mJ
55 V
80 A
.0063 ohm
215 pF
TO-263AB
175 Cel
-55 Cel
250 W
320 A
IPI80N06S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; JEDEC-95 Code: TO-262AA; Package Style (Meter): IN-LINE;
.0066 ohm
IPP60R380P6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 1;
210 mJ
10.6 A
.38 ohm
260
29 A
IPP90R500C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Qualification: Not Qualified; Avalanche Energy Rating (EAS): 388 mJ;
388 mJ
11 A
.5 ohm
156 W
24 A
Not Qualified
FET General Purpose Power
SPP47N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Pulsed Drain Current (IDM): 188 A; Maximum Operating Temperature: 175 Cel;
400 mJ
100 V
47 A
.033 ohm
175 W
188 A
MATTE TIN
SPU18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Drain Current (ID): 18.6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
18.6 A
.13 ohm
TO-251
P-CHANNEL
80 W
74.4 A
Other Transistors
SPD18P06P
Infineon's SPD18P06P is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.4A IDM, and 0.13 ohm RDS(on). Ideal for power applications, it operates in Enhancement Mode with 80W Power Dissipation and can handle up to 175°C.
BTS110NKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
10 A
40 A
BTS113AE3064NKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
11.5 A
.17 ohm
IPB180N03S4L01ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
ULTRA-LOW RESISTANCE
180 A
.00105 ohm
TO-263
R-PSSO-G6
6
720 A
BSP613P
BSP613P by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 11.6A and an avalanche energy rating of 150mJ. With a 0.13 ohm max drain-source resistance, this MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
2.9 A
R-PDSO-G4
1.8 W
11.6 A
SPB18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Additional Features: AVALANCHE RATED; Package Shape: RECTANGULAR;
151 mJ
18.7 A
e0
220
74.8 A
TIN LEAD
IPZ65R095C7
IPZ65R095C7 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 24A ID. Ideal for SWITCHING applications, it features a built-in diode, 100A IDM, and 0.095 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 128W and can withstand temperatures from -55 to 150 °C.
118 mJ
.095 ohm
128 W
IPA65R190C7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 57 mJ; Maximum Drain-Source On Resistance: .19 ohm; Package Body Material: PLASTIC/EPOXY;
57 mJ
8 A
49 A
BSO215C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G8;
LOGIC LEVEL
26 mJ
20 V
3.7 A
.1 ohm
2 W
14.8 A
BSO612CV
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 3 A; JESD-30 Code: R-PDSO-G8;
235
BSO613SPV
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JESD-30 Code: R-PDSO-G8; Peak Reflow Temperature (C): 235;
3.44 A
2.5 W
13.8 A
SPN02N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; JESD-30 Code: R-PDSO-G4;
HIGH VOLTAGE
.4 A
3 ohm
255
2.2 A
SPN03N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .7 A;
100 mJ
.7 A
1.4 ohm
SPP07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Minimum DS Breakdown Voltage: 600 V; Avalanche Energy Rating (EAS): 230 mJ;
83 W
14.6 A
SPB80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
810 mJ
.0031 ohm
300 W
SPB80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0035 ohm
SPB80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 80 A;
40 V
.0034 ohm
SPB80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Additional Features: AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE;
.0048 ohm
SPB80N06S2-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 215 W; Minimum DS Breakdown Voltage: 55 V; Operating Mode: ENHANCEMENT MODE;
450 mJ
.008 ohm
215 W
SPB80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (Abs) (ID): 80 A;
800 mJ
.0057 ohm
SPB80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 210 W; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified;
.01 ohm
210 W
SPB80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
75 V
.0071 ohm
SPB80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 75 V;
.0087 ohm
SPP80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
SPP80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
.0038 ohm
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